-
本文利用X射线截面形貌术、限区形貌术、回摆形貌术以及扫描电子显微镜等方法研究了硅单晶中一个片状沉淀物,确定其组态及在晶体内的位置,并对其形成作了简略的分析。A plan-like precipitate in silicon single crystal was investigated by means of X-ray section topography. limited topography, dilatation topography and SEM. The configuration and position of the defect in matrix were determined. And a breief analysis about its formation is also presented.
计量
- 文章访问数: 4615
- PDF下载量: 459
- 被引次数: 0
下载:
