搜索

x
中国物理学会期刊

硅单晶中铜沉淀物的几何形态

CSTR: 32037.14.aps.29.860

MORPHOLOGY OF THE COPPER PRECIPITATES IN SILICON SINGLE CRYSTALS

CSTR: 32037.14.aps.29.860
PDF
导出引用
  • 本文利用红外显微镜和化学浸蚀的方法,研究了硅单晶中铜沉淀物的几何形态。实验表明,用红外显微镜观察到的各种形态的沉淀物是由110面上的片状沉淀组成的,样品的性质对它的形态没有影响。

     

    In this article, infra-red microscopy and etching method were used to study the morphology of the copper precipitates in silicon crystals. It was found that a variety of copper precipitates observed by ir microscopy consists of precipitated disks laying in 110 planes and their morphology bears no relation to the properties of the sample.

     

    目录

    /

    返回文章
    返回