The influence of channel size on total dose irradiation and hot-carrier effects of sub-micro NMOSFET

Cui Jiang-Wei; Yu Xue-Feng; Ren Di-Yuan; Lu Jian

doi:10.7498/aps.61.026102

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Cui Jiang-Wei, Yu Xue-Feng, Ren Di-Yuan, Lu Jian. The influence of channel size on total dose irradiation and hot-carrier effects of sub-micro NMOSFET. Acta Physica Sinica, 2012, 61(2): 026102. DOI: 10.7498/aps.61.026102

Citation:

Cui Jiang-Wei, Yu Xue-Feng, Ren Di-Yuan, Lu Jian. The influence of channel size on total dose irradiation and hot-carrier effects of sub-micro NMOSFET. Acta Physica Sinica, 2012, 61(2): 026102. DOI: 10.7498/aps.61.026102

Citation:

Cui Jiang-Wei, Yu Xue-Feng, Ren Di-Yuan, Lu Jian. The influence of channel size on total dose irradiation and hot-carrier effects of sub-micro NMOSFET. Acta Physica Sinica, 2012, 61(2): 026102. DOI: 10.7498/aps.61.026102