Dose-rate sensitivity of deep sub-micro complementary metal oxide semiconductor process

Zheng Qi-Wen; Cui Jiang-Wei; Wang Han-Ning; Zhou Hang; Yu De-Zhao; Wei Ying; Su Dan-Dan

doi:10.7498/aps.65.076102

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Zheng Qi-Wen, Cui Jiang-Wei, Wang Han-Ning, Zhou Hang, Yu De-Zhao, Wei Ying, Su Dan-Dan. Dose-rate sensitivity of deep sub-micro complementary metal oxide semiconductor process. Acta Physica Sinica, 2016, 65(7): 076102. DOI: 10.7498/aps.65.076102

Citation:

Zheng Qi-Wen, Cui Jiang-Wei, Wang Han-Ning, Zhou Hang, Yu De-Zhao, Wei Ying, Su Dan-Dan. Dose-rate sensitivity of deep sub-micro complementary metal oxide semiconductor process. Acta Physica Sinica, 2016, 65(7): 076102. DOI: 10.7498/aps.65.076102

Citation:

Zheng Qi-Wen, Cui Jiang-Wei, Wang Han-Ning, Zhou Hang, Yu De-Zhao, Wei Ying, Su Dan-Dan. Dose-rate sensitivity of deep sub-micro complementary metal oxide semiconductor process. Acta Physica Sinica, 2016, 65(7): 076102. DOI: 10.7498/aps.65.076102