Radiation hardening by process technology  for high voltage nMOSFET in 180 nm embeded flash process

Chen Xiao-Liang; Sun Wei-Feng

doi:10.7498/aps.71.20221172

Abstract

Radiation-hardened embedded flash technology is widely used in aerospace field. The high voltage nMOSFET is the key device to be hardened as it is the most sensitive device to total ionizing dose (TID) effect. In this study, the shallow tench isolation (STI) sidewall implantation method is used to harden 5 V nMOSFET for 180 nm eFlash process. Through the study of the TID response of the device, two problems emerge in this hardening technology. Firstly, the hardening ions are implanted after STI trench etching, the doping profile is influenced by the following thermal process, resulting in lower doping concentration at STI edge. The device fails to work due to high leakage current after 1×10⁵ rad (1 rad = 10^–2 Gy) (Si) radiation. Secondly, the hardening ions that are implanted in drain region reduce the breakdown voltage of PN junction on the drain side. Device cannot satisfy the actual requirement in the circuit. To solve these problems, we propose a new device hardening method called partial channel ion implantation. Comparing with previous method, in order to reduce the doping redistribution effect, we adjust the hardening ion implantation to an extent after the oxidation of gate oxide. Moreover, an extra mask is introduced to determine the hardening implantation region to avoid ion implantation on the drain side of the device. Therefore, the drain breakdown voltage will not be influenced by hardening implantation. By using this new hardening technology for high voltage NMOS, the device can maintain the typical design of strip-type gate. The hardening method is compatible with general process technology and does not influence the electrical parameters of the device obviously. The results show that with the partial channel ion implantation method, the drain leakage of the device is kept at a pico-ampere level after 1.5×10⁵ rad (Si) radiation. That is five orders of magnitude lower than that obtained by using previous STI implantation hardening technology.

Keywords:

Authors and contacts

National Application Specific Integrated Circuit System Engineering Research Center, School of Electronic Science & Engineering, Southeast University, Nanjing 211189, China

Corresponding author: Chen Xiao-Liang, four_1@126.com

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References

[1]	Barnaby H J, McLain M L, Sanchez Esqueda I, Chen X J 2009 IEEE Trans. Circuits Syst. Ⅰ 56 1870 Google Scholar
[2]	卓青青, 刘红侠, 杨兆年, 蔡慧民, 郝跃 2012 物理学报 61 220702 Google Scholar Zhuo Q Q, Liu H X, Yang Z N, Cai H M, Hao Y 2012 Acta Phys. Sin. 61 220702 Google Scholar
[3]	Zheng M Q, Liu Y, Duan C, Luo M T 2014 12 th IEEE International Conference on Solid-State and Integrated Circuit Technology Guilin, China, October 28–31, 2014 p1
[4]	Liu Z L, Hu Z Y, Zhang Z X, Shao H, Chen M, Bi D W, Ning B X, Zou S C 2011 Microelectron. Reliab. 51 1148 Google Scholar
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[7]	刘一宁, 杨亚鹏, 陈法国, 张建岗, 郭荣, 梁润成 2021 核技术 44 030502 Google Scholar Liu Y N, Yang Y P, Chen F G, Zhang J G, Guo R, Liang R C 2021 Nucl. Tech. 44 030502 Google Scholar
[8]	Schwank J R, Shaneyfelt M R, Fleetwood D M, Felix J A, Dodd P E, Paillet P, VÉronique F C 2008 IEEE Trans. Nucl. Sci. 55 1833 Google Scholar
[9]	Dodd P E, Shaneyfelt M R, Schwank J R, Felix 2010 IEEE Trans. Nucl. Sci. 57 1747 Google Scholar
[10]	王信, 陆妩, 吴雪, 马武英, 崔江维, 刘默寒, 姜柯 2014 物理学报 22 226101 Google Scholar Wang X, Lu W, Wu X, Ma W Y, Cui J W, Liu M H, Jiang K 2014 Acta Phys. Sin. 22 226101 Google Scholar
[11]	郑齐文, 崔江维, 王汉宁, 周航, 余德昭, 魏莹, 苏丹丹 2016 物理学报 65 076102 Google Scholar Zheng Q W, Cui J W, Wang H N, Zhou H, Yu D Z, Wei Y, Su D D 2016 Acta Phys. Sin. 65 076102 Google Scholar
[12]	Giovanni B, Valentino L, Alberto S, Stefano G 2013 Proceedings of the European Conference on Radiation and its Effects on Components and Systems Oxford, UK, September 23–27, 2013 p1
[13]	范雪, 李威, 李平, 张斌, 谢小东, 王刚, 胡滨, 翟亚红 2012 物理学报 61 016106 Google Scholar Fan X, Li W, Li P, Zhang B, Xie X D, Wang G, Hu B, Zhai Y H 2012 Acta Phys. Sin. 61 016106 Google Scholar
[14]	Clark L T, Mohr K C, Holbert K E 2007 IEEE International Reliability Physics Symposium Proceedings Phoenix, USA, April 15–19, 2007 p582
[15]	Lee M S, Lee H C 2013 IEEE Trans. Nucl. Sci. 60 3084 Google Scholar
[16]	Malik M, Prakash N R, Kumar A, Jatana H S 2022 Silicon 14 3891 Google Scholar
[17]	董艺, 沈鸣杰, 刘岐 2018 航天器环境工程 35 468 Google Scholar Dong Y, Shen M J, Liu Q 2018 Spacecr. Environ. Eng. 35 468 Google Scholar
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[19]	Vaz P I, Both T H, Vidor F F, Brum R M, Wirth G I 2018 J. Electron. Test. 34 735 Google Scholar
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[21]	Peng C, Hu Z Y, En Y F, Chen Y Q, Lei Z F, Zhang Z G, Zhang Z X, Li B 2018 IEEE Trans. Nucl. Sci. 65 877 Google Scholar
[22]	谢儒彬, 吴建伟, 陈海波, 李艳艳, 洪根深 2016 太赫兹科学与电子信息学报 14 805 Google Scholar Xie R B, Wu J W, Chen H B, Li Y Y, Hong G S 2016 J. Terahertz Sci. Electron. Inf. Technol. 14 805 Google Scholar
[23]	王思浩, 鲁庆, 王文华, 安霞, 黄如 2010 物理学报 59 1970 Google Scholar Wang S H, Lu Q, Wang W H, An X, Huang R 2010 Acta Phys. Sin. 59 1970 Google Scholar

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图 1 MOS结构中辐照产生和积累电荷能带示意图^[8]

Figure 1. Band diagram of radiation induced charge generation and accumulation in MOS structure^[8].

DownLoad: Full-Size Img PowerPoint

图 2 辐射导致的STI侧壁寄生NMOS示意图

Figure 2. Schematic of radiation induced parasitic NMOS at STI sidewall.

DownLoad: Full-Size Img PowerPoint

图 3 传统的STI场区离子注入加固技术示意图　(a)器件版图; (b)工艺示意图

Figure 3. Schematic of traditional ion implantation technology on STI field region: (a) Layout of the device; (b) diagram of the process

DownLoad: Full-Size Img PowerPoint

图 4 5 V NMOS器件总剂量效应测试结果　(a) 无STI场区离子注入; (b) 场区离子注入剂量5×10¹³ cm^–2 ; (c) 场区离子注入剂量8×10¹³ cm^–2

Figure 4. Total ionizing dose test results of 5 V NMOS device: (a) Without STI field implantation; (b) STI filed implantation dose 5×10¹³ cm^–2 ; (c) STI filed implantation dose 8×10¹³ cm^–2.

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图 5 STI边缘掺杂离子浓度仿真　(a) STI结构中离子浓度分布图; (b) 不同工艺热预算下不同位置的离子浓度分布对比

Figure 5. Simulation of doping concentration at STI edge region: (a) Ion distribution of STI structure; (b) doping profile comparison at various positions under different thermal budget.

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图 6 STI场区离子注入对漏击穿电压的影响示意图

Figure 6. Schematic of the impact of ion implantation on drain breakdown voltage.

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图 7 STI场区加固注入剂量对器件漏击穿电压的影响

Figure 7. Impact of hardening implantation dose on drain breakdown voltage.

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图 8 新型抗总剂量加固注入器件结构和能带图

Figure 8. Device structure and band diagram with the new hardening ion implantation.

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图 9 采用部分沟道离子注入器件总剂量效应　(a)加固注入剂量2×10¹³ cm^–2; (b)加固注入剂5×10¹³ cm^–2 ; (c)加固注入剂量8×10¹³ cm^–2

Figure 9. TID effect of the devices with partial channel hardened implantation: (a) Hardening implantation dose 2×10¹³ cm^–2 ; (b) hardening implantation dose 5×10¹³ cm^–2 ; (c) hardening implantation dose 8×10¹³ cm^–2.

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表 1 STI场区离子注入实验分片方案

Table 1. Split condition of ion implantation for experiment

样品	STI场区离子加固注入
样品	能量/keV	剂量/cm^–2
#1	120	0
#2	120	5×10¹³
#3	120	8×10¹³

DownLoad: CSV

表 2 两种注入加固方案测试结果对比

Table 2. Comparison of two total ionizing dose hardening methodology.

测试条件和参数		STI场区加固技术			部分沟道离子注入技术
测试条件和参数		#1	#2	#3	#4	#5	#6
辐照前	V_T/V	0.72	0.75	0.78	0.74	0.76	0.79
	I_Dsat/(μA·μm^–1)	428	421	431	426	433	430
	I_off /(pA·μm^–1)	9.7	9.5	1.4	2.0	1.1	2.2
	B_VD/V	12.2	11.4	11.1	12.1	12.2	12.1
1×10⁵ rad(Si)辐照后	V_T/V	NA	NA	0.35	0.67	0.65	0.69
	I_Dsat/(μA·μm^–1)	448	436	445	444	449	441
	I_off /(pA·μm^–1)	1.9×10⁷	2.5×10⁷	5.0×10⁶	5.3×10²	5.9	3.0
辐照后参数变化	ΔV_T/%	—	—	–55.1	–9.5	–14.5	–12.7
	ΔI_Dsat/%	4.7	3.6	3.2	4.2	3.7	2.6
	ΔI_off/%	1.4×10⁸	2.6×10⁸	3.6×10⁸	2.6×10⁵	4.2×10²	36

DownLoad: CSV

[1]	Barnaby H J, McLain M L, Sanchez Esqueda I, Chen X J 2009 IEEE Trans. Circuits Syst. Ⅰ 56 1870 Google Scholar
[2]	卓青青, 刘红侠, 杨兆年, 蔡慧民, 郝跃 2012 物理学报 61 220702 Google Scholar Zhuo Q Q, Liu H X, Yang Z N, Cai H M, Hao Y 2012 Acta Phys. Sin. 61 220702 Google Scholar
[3]	Zheng M Q, Liu Y, Duan C, Luo M T 2014 12 th IEEE International Conference on Solid-State and Integrated Circuit Technology Guilin, China, October 28–31, 2014 p1
[4]	Liu Z L, Hu Z Y, Zhang Z X, Shao H, Chen M, Bi D W, Ning B X, Zou S C 2011 Microelectron. Reliab. 51 1148 Google Scholar
[5]	Hu Z Y, Liu Z L, Shao H, Zhang Z X, Ning B X, Chen M, Bi D W, Zou S C 2011 Microelectron. Reliab. 51 1295 Google Scholar
[6]	Liu Z L, Hu Z Y, Zhang Z X, Shao H, Chen M, Bi D W, Ning B X, Wang R, Zou S C 2010 Nucl. Instrum. Methods Phys. Res. Sect. B 268 3498 Google Scholar
[7]	刘一宁, 杨亚鹏, 陈法国, 张建岗, 郭荣, 梁润成 2021 核技术 44 030502 Google Scholar Liu Y N, Yang Y P, Chen F G, Zhang J G, Guo R, Liang R C 2021 Nucl. Tech. 44 030502 Google Scholar
[8]	Schwank J R, Shaneyfelt M R, Fleetwood D M, Felix J A, Dodd P E, Paillet P, VÉronique F C 2008 IEEE Trans. Nucl. Sci. 55 1833 Google Scholar
[9]	Dodd P E, Shaneyfelt M R, Schwank J R, Felix 2010 IEEE Trans. Nucl. Sci. 57 1747 Google Scholar
[10]	王信, 陆妩, 吴雪, 马武英, 崔江维, 刘默寒, 姜柯 2014 物理学报 22 226101 Google Scholar Wang X, Lu W, Wu X, Ma W Y, Cui J W, Liu M H, Jiang K 2014 Acta Phys. Sin. 22 226101 Google Scholar
[11]	郑齐文, 崔江维, 王汉宁, 周航, 余德昭, 魏莹, 苏丹丹 2016 物理学报 65 076102 Google Scholar Zheng Q W, Cui J W, Wang H N, Zhou H, Yu D Z, Wei Y, Su D D 2016 Acta Phys. Sin. 65 076102 Google Scholar
[12]	Giovanni B, Valentino L, Alberto S, Stefano G 2013 Proceedings of the European Conference on Radiation and its Effects on Components and Systems Oxford, UK, September 23–27, 2013 p1
[13]	范雪, 李威, 李平, 张斌, 谢小东, 王刚, 胡滨, 翟亚红 2012 物理学报 61 016106 Google Scholar Fan X, Li W, Li P, Zhang B, Xie X D, Wang G, Hu B, Zhai Y H 2012 Acta Phys. Sin. 61 016106 Google Scholar
[14]	Clark L T, Mohr K C, Holbert K E 2007 IEEE International Reliability Physics Symposium Proceedings Phoenix, USA, April 15–19, 2007 p582
[15]	Lee M S, Lee H C 2013 IEEE Trans. Nucl. Sci. 60 3084 Google Scholar
[16]	Malik M, Prakash N R, Kumar A, Jatana H S 2022 Silicon 14 3891 Google Scholar
[17]	董艺, 沈鸣杰, 刘岐 2018 航天器环境工程 35 468 Google Scholar Dong Y, Shen M J, Liu Q 2018 Spacecr. Environ. Eng. 35 468 Google Scholar
[18]	Chang J S, Chong K S, Shu W, Lin T, Jiang J, Lwin N K Z, Kang Y 2014 IEEE 57th International Midwest Symposium on Circuits and Systems College Station, USA, August 3–6, 2014 p821
[19]	Vaz P I, Both T H, Vidor F F, Brum R M, Wirth G I 2018 J. Electron. Test. 34 735 Google Scholar
[20]	Song L, Hu Z Y, Zhang M Y, Liu X N, Dai L H, Zhang Z X, Zou S C 2017 Microelectron. Reliab. 74 1 Google Scholar
[21]	Peng C, Hu Z Y, En Y F, Chen Y Q, Lei Z F, Zhang Z G, Zhang Z X, Li B 2018 IEEE Trans. Nucl. Sci. 65 877 Google Scholar
[22]	谢儒彬, 吴建伟, 陈海波, 李艳艳, 洪根深 2016 太赫兹科学与电子信息学报 14 805 Google Scholar Xie R B, Wu J W, Chen H B, Li Y Y, Hong G S 2016 J. Terahertz Sci. Electron. Inf. Technol. 14 805 Google Scholar
[23]	王思浩, 鲁庆, 王文华, 安霞, 黄如 2010 物理学报 59 1970 Google Scholar Wang S H, Lu Q, Wang W H, An X, Huang R 2010 Acta Phys. Sin. 59 1970 Google Scholar

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