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The gate length dependence of PD SOI NMOS device on total dose irradiation is investigated, which is exposed to 60Co gamma ray at a dose rate of 50 rad(Si)/s. The result shows that the transistor with shorter gate length shows larger radiation-induced interface trap density, which leads to the maximum transconductance degradation. The local floating body effect induces the output characteristic variation of irradiated MOSFET with gate length. After irradiation, the breakdown voltage of short channel SOI device decreases. Due to the buried oxide, the radiation-induced degradation of short channel SOI device is much serious compared with that of long channel SOI device.
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Keywords:
- PD SOI NMOS /
- total ionizing dose /
- gate length /
- bias state
[1] Schwank J R, Ferlet-cavrois V, Shaneyfelt M R, Paillet P, Dodd P E 2003 IEEE Trans. Nucl. Sci. 50 522
[2] Schwank J R, Shaneyfelt M R, Fleetwood D M, Felix J A, Dodd P E, Paillet P, Ferlet-Cavrois V 2008 IEEE Trans. Nucl. Sci. 55 1833
[3] Felix J A, Schwank J R, Cirba C R, Schrimpf R D, Shaneyfelt M R, Fleetwood D M, Dodd P E 2004 Microelectronic Engineering 72 332
[4] Schrpulla J, Amram A L, Gin V W, Morse T C, Nakamura K T 1992 IEEE Trans. Nucl. Sci. 39 1992
[5] Djezzar B, Smatti A, Amrouche A, Kechouane M 2000 IEEE Trans. Nucl. Sci. 47 1872
[6] Hu Z Y, Liu Z L, Shao H, Zheng Z X, Ning B X, Bi D W, Chen M, Zuo S C 2012 Acta Phys.Sin. 61 050702 (in Chinese) [胡志远, 刘张李, 邵华, 张正选, 宁冰旭, 毕大炜, 陈明, 邹世昌 2012 物理学报 61 050702]
[7] Liu Z L, Hu Z X, Zhang Z X, Shao H, Ning B X, Bi D W, Chen M, Zou S C 2011 Acta Phys. Sin. 60 116013 (in Chinese) [刘张李, 胡志远, 张正选, 邵华, 宁冰旭, 毕大炜, 陈明, 邹世昌 2011 物理学报 60 116013]
[8] Liu Z L, Hu Z Y, Zhang Z X, Shao H, Chen M, Bi D W, Ning B X , Zuo S C 2011 Chinese Journal of Semiconductors 32 064004 (in Chinese) [刘张李, 胡志远, 张正选, 邵华, 陈明, 毕大炜, 宁冰旭, 邹世昌 2011 半导体学报 32 064004]
[9] Freeman R F A, Holmes-Siedle A G 1978 IEEE Trans. Nucl. Sci. 25 1216
[10] McGarrity J M 1980 IEEE Trans. Nucl. Sci. 27 1739
[11] Benedetto J M, Boesch H E 1986 IEEE Trans. Nucl. Sci. 33 1318
[12] Wang S H, Pei Y P, Huang R, Wang W H, Liu W, Xue S B, An X, Tian J Q, Wang Y Y 2010 J. Appl. Phys. 107 024515
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[1] Schwank J R, Ferlet-cavrois V, Shaneyfelt M R, Paillet P, Dodd P E 2003 IEEE Trans. Nucl. Sci. 50 522
[2] Schwank J R, Shaneyfelt M R, Fleetwood D M, Felix J A, Dodd P E, Paillet P, Ferlet-Cavrois V 2008 IEEE Trans. Nucl. Sci. 55 1833
[3] Felix J A, Schwank J R, Cirba C R, Schrimpf R D, Shaneyfelt M R, Fleetwood D M, Dodd P E 2004 Microelectronic Engineering 72 332
[4] Schrpulla J, Amram A L, Gin V W, Morse T C, Nakamura K T 1992 IEEE Trans. Nucl. Sci. 39 1992
[5] Djezzar B, Smatti A, Amrouche A, Kechouane M 2000 IEEE Trans. Nucl. Sci. 47 1872
[6] Hu Z Y, Liu Z L, Shao H, Zheng Z X, Ning B X, Bi D W, Chen M, Zuo S C 2012 Acta Phys.Sin. 61 050702 (in Chinese) [胡志远, 刘张李, 邵华, 张正选, 宁冰旭, 毕大炜, 陈明, 邹世昌 2012 物理学报 61 050702]
[7] Liu Z L, Hu Z X, Zhang Z X, Shao H, Ning B X, Bi D W, Chen M, Zou S C 2011 Acta Phys. Sin. 60 116013 (in Chinese) [刘张李, 胡志远, 张正选, 邵华, 宁冰旭, 毕大炜, 陈明, 邹世昌 2011 物理学报 60 116013]
[8] Liu Z L, Hu Z Y, Zhang Z X, Shao H, Chen M, Bi D W, Ning B X , Zuo S C 2011 Chinese Journal of Semiconductors 32 064004 (in Chinese) [刘张李, 胡志远, 张正选, 邵华, 陈明, 毕大炜, 宁冰旭, 邹世昌 2011 半导体学报 32 064004]
[9] Freeman R F A, Holmes-Siedle A G 1978 IEEE Trans. Nucl. Sci. 25 1216
[10] McGarrity J M 1980 IEEE Trans. Nucl. Sci. 27 1739
[11] Benedetto J M, Boesch H E 1986 IEEE Trans. Nucl. Sci. 33 1318
[12] Wang S H, Pei Y P, Huang R, Wang W H, Liu W, Xue S B, An X, Tian J Q, Wang Y Y 2010 J. Appl. Phys. 107 024515
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