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We report the growth of single cubic phase Mg0.57Zn0.43O (MZO) alloy film through the method of metal organic chemical vapor deposition (MOCVD) and the relation between the quality and thermal stability of the alloy film after heat treatment. From X-ray measurement, we found that the quality of cubic MZO film was significantly influenced by the heating temperature. At 500-850℃, the crystallization and surface morphology of the alloy film were improved obviously as the temperature increased. Also, the blue shift of absorption cut-off edge, broadened band gap and maintained single cubic structure were found with increasing temperature. However, up to 950℃, mixed phases were formed in cubic MZO alloy film. For the photoresponse measurement of the MSM unit devices synthesized by the cubic MZO alloy film under 15 V bias, we found that the response peak of devices was around 260 nm, rejection ratio of UV/Vis was about 4 orders of magnitude, saturated responsibility was 3.8 mA/W and the value of dark current was about 5 pA.
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Keywords:
- MOCVD /
- Mg0.57Zn0.43O /
- heat treatment /
- photoresponse
[1] Yang W, Hullavarad S S, Nagaraj B, Takeuchi I, Sharma R P, Venkatesan T 2003 Appl. Phys. Lett. 82 3424
[2] Choopun S, Vispute R D, Yang W, Sharma R P, Venkatesan T 2002 Appl. Phys. Lett. 80 1529
[3] Park W I, Yi Y C, Jang H M 2001 Appl. Phys. Lett. 79 2022
[4] Minemoto T, Negami T, Nishiwaki S, Takakura H, Hamakawa Y 2000 Thin. Solid. Films. 32 173
[5] Chen J, Shen W Z, Chen N B, Qiu D J, Wu H Z 2003 J. Phys. C 15 475
[6] Ohtomo A, Kawasaki M, Koida T, Masubuchi K, Koinuma H 1999 Appl. Phys. Lett. 75 980
[7] Xin P, Sun C W, Qin F W, Wen S P, Zhang Q Y 2007 Acta Phys. Sin. 56 1082 (in Chinese) [辛萍, 孙成伟, 秦福文, 文胜平, 张庆瑜 2007 物理学报 56 1082]
[8] Sharma A K, Narayan J, Muth J F, Teng C W, Jin C, Kvit A, Kolbas R M, Holland O W 1999 Appl. Phys. Lett. 53 327
[9] Lin B X, Fu Z X, Jia Y B, Liao G H 2001 Acta Phys. Sin. 50 2208 (in Chinese) [林碧霞, 傅竹西, 贾云波, 廖桂红 2001 物理学报 50 2208]
[10] Qin J M, Wang H, Zeng F M, Li J L, Wan Y C, Liu J H 2010 Acta Phys. Sin. 59 8910 (in Chinese) [秦杰明, 王皓, 曾繁明, 李建利, 万玉春, 刘景和 2010 物理学报 59 8910]
[11] Choopun S, Vispute R D, Yan W, Sharma R P, Venkatesan T, Shen H 2002 Appl. Phys. Lett. 80 1529
[12] Ju Z G, Shan C X, Yang C L, Zhang J Y, Yao B, Zhao D X, Shen D Z 2009 Appl. Phys. Lett. 94 101902
[13] Bendersky L A, Takeuchi I, Chang K S, Yang W, Hullavarad S, Vispute R D 2005 J. Appl. Phys. 98 083526
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[1] Yang W, Hullavarad S S, Nagaraj B, Takeuchi I, Sharma R P, Venkatesan T 2003 Appl. Phys. Lett. 82 3424
[2] Choopun S, Vispute R D, Yang W, Sharma R P, Venkatesan T 2002 Appl. Phys. Lett. 80 1529
[3] Park W I, Yi Y C, Jang H M 2001 Appl. Phys. Lett. 79 2022
[4] Minemoto T, Negami T, Nishiwaki S, Takakura H, Hamakawa Y 2000 Thin. Solid. Films. 32 173
[5] Chen J, Shen W Z, Chen N B, Qiu D J, Wu H Z 2003 J. Phys. C 15 475
[6] Ohtomo A, Kawasaki M, Koida T, Masubuchi K, Koinuma H 1999 Appl. Phys. Lett. 75 980
[7] Xin P, Sun C W, Qin F W, Wen S P, Zhang Q Y 2007 Acta Phys. Sin. 56 1082 (in Chinese) [辛萍, 孙成伟, 秦福文, 文胜平, 张庆瑜 2007 物理学报 56 1082]
[8] Sharma A K, Narayan J, Muth J F, Teng C W, Jin C, Kvit A, Kolbas R M, Holland O W 1999 Appl. Phys. Lett. 53 327
[9] Lin B X, Fu Z X, Jia Y B, Liao G H 2001 Acta Phys. Sin. 50 2208 (in Chinese) [林碧霞, 傅竹西, 贾云波, 廖桂红 2001 物理学报 50 2208]
[10] Qin J M, Wang H, Zeng F M, Li J L, Wan Y C, Liu J H 2010 Acta Phys. Sin. 59 8910 (in Chinese) [秦杰明, 王皓, 曾繁明, 李建利, 万玉春, 刘景和 2010 物理学报 59 8910]
[11] Choopun S, Vispute R D, Yan W, Sharma R P, Venkatesan T, Shen H 2002 Appl. Phys. Lett. 80 1529
[12] Ju Z G, Shan C X, Yang C L, Zhang J Y, Yao B, Zhao D X, Shen D Z 2009 Appl. Phys. Lett. 94 101902
[13] Bendersky L A, Takeuchi I, Chang K S, Yang W, Hullavarad S, Vispute R D 2005 J. Appl. Phys. 98 083526
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