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Qin Jie-Ming, Cao Jian-Ming, Jiang Da-Yong. Growth and characterization of the Mg0.57Zn0.43O alloy film. Acta Physica Sinica,
2013, 62(13): 138101.
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Sun Pei, Li Jian-Jun, Deng Jun, Han Jun, Ma Ling-Yun, Liu Tao. Temperature window of the (Al0.1Ga0.9)0.5In0.5P growth by MOCVD. Acta Physica Sinica,
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Wang Yan-Wen, Wu Hua-Rui. Exciton states and optical properties in zinc-blende GaN/AlGaN quantum dot. Acta Physica Sinica,
2012, 61(10): 106102.
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Shen Man, Zhang Liang, Liu Jian-Jun. Effects of magneic field and quantum dot size on properties of exciton. Acta Physica Sinica,
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Xing Hai-Ying, Fan Guang-Han, Yang Xue-Lin, Zhang Guo-Yi. Optical properties of GaMnN films grown by metal-organic chemical vapor deposition. Acta Physica Sinica,
2010, 59(1): 504-507.
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Li Tong, Wang Huai-Bing, Liu Jian-Ping, Niu Nan-Hui, Zhang Nian-Guo, Xing Yan-Hui, Han Jun, Liu Ying, Gao Guo, Shen Guang-Di. Studies on electrical properties of delta-doping p-GaN films. Acta Physica Sinica,
2007, 56(2): 1036-1040.
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Zheng Rui-Lun. Energy of excitons and probability distribution of electrons in columned composite system composed of quantum dots and quantum wires. Acta Physica Sinica,
2007, 56(8): 4901-4907.
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Xie Zi-Li, Zhang Rong, Xiu Xiang-Qian, Han Ping, Liu Bin, Chen Lin, Yu Hui-Qiang, Jiang Ruo-Lian, Shi Yi, Zheng You-Dou. MOCVD growth and characteristics of high quality AlGaN used in the DBR structure of ultraviolet detector. Acta Physica Sinica,
2007, 56(11): 6717-6721.
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Chen Xin-Liang, Xue Jun-Ming, Zhang De-Kun, Sun Jian, Ren Hui-Zhi, Zhao Ying, Geng Xin-Hua. Effect of substrate temperature on the ZnO thin films as TCO in solar cells grown by MOCVD technique. Acta Physica Sinica,
2007, 56(3): 1563-1567.
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Wang Huan, Yao Shu-De, Pan Yao-Bo, Zhang Guo-Yi. Strain in AlInGaN thin films caused by different contents of Al and In studied by Rutherford backscattering/channeling and high resolution X-ray diffraction. Acta Physica Sinica,
2007, 56(6): 3350-3354.
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Peng Dong-Sheng, Feng Yu-Chun, Wang Wen-Xin, Liu Xiao-Feng, Shi Wei, Niu Han-Ben. A new method to grow high quality GaN film by MOCVD. Acta Physica Sinica,
2006, 55(7): 3606-3610.
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Pan Jiao-Qing, Zhao Qian, Zhu Hong-Liang, Zhao Ling-Juan, Ding Ying, Wang Bao-Jun, Zhou Fan, Wang Lu-Feng, Wang Wei. Material growth and device fabrication of highly strained InGaAs/InGaAsP long wavelength distributed feedback lasers. Acta Physica Sinica,
2006, 55(10): 5216-5220.
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Dong Qing-Rui, Niu Zhi-Chuan. Excitonic energy of vertically stacked self-assmbled InAs quantum dots. Acta Physica Sinica,
2005, 54(4): 1794-1798.
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Tan Hua-Tang, Gan Zhong-Wei, Li Gao-Xiang. Entanglement for excitons in three quantum dots in a cavity coupled to a broadband squeezed vacuum. Acta Physica Sinica,
2005, 54(3): 1178-1183.
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Wang Fang-Zhen, Chen Zhang-Hai, Liu Yi, Huang Shao-Hua, Bai Li-Hui, Shen Xue-Chu. Exciton transfer and the optical properties of two types of quantum islands (dots) in ultrathin CdSe/ZnSe layers. Acta Physica Sinica,
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Yuan Hong-Tao, Zhang Yao, Gu Jing-Hua. A study on the in-situ growth of highly oriented ZnO whisker. Acta Physica Sinica,
2004, 53(2): 646-650.
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Ma Hong, Chen Si-Hai, Jin Jin-Yan, Yi Xin-Jian, Zhu Guang-Xi. Study on 1.55μ m AlGaInAs-InP polarization-insensitive semiconductor optical amplifier and its temperature characterizatics. Acta Physica Sinica,
2004, 53(6): 1868-1872.
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ZHANG DE-HENG, LIU YUN-YAN, ZHANG DE-JUN. THE UV PHOTOCONDUCTIVITY OF n-TYPE GaN FILMSDEPOSITED BY MOCVD. Acta Physica Sinica,
2001, 50(9): 1800-1804.
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