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2021, 70(4): 045101.
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Zhang Hai-Bao, Chen Qiang. Recent progress of non-thermal plasma material surface treatment and functionalization. Acta Physica Sinica,
2021, 70(9): 095203.
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2015, 64(4): 047202.
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Qin Jie-Ming, Cao Jian-Ming, Jiang Da-Yong. Growth and characterization of the Mg0.57Zn0.43O alloy film. Acta Physica Sinica,
2013, 62(13): 138101.
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Xing Hai-Ying, Fan Guang-Han, Yang Xue-Lin, Zhang Guo-Yi. Optical properties of GaMnN films grown by metal-organic chemical vapor deposition. Acta Physica Sinica,
2010, 59(1): 504-507.
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Lü Ling, Gong Xin, Hao Yue. Properties of p-type GaN etched by inductively coupled plasma and their improvement. Acta Physica Sinica,
2008, 57(2): 1128-1132.
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Li Tong, Wang Huai-Bing, Liu Jian-Ping, Niu Nan-Hui, Zhang Nian-Guo, Xing Yan-Hui, Han Jun, Liu Ying, Gao Guo, Shen Guang-Di. Studies on electrical properties of delta-doping p-GaN films. Acta Physica Sinica,
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Xie Zi-Li, Zhang Rong, Xiu Xiang-Qian, Han Ping, Liu Bin, Chen Lin, Yu Hui-Qiang, Jiang Ruo-Lian, Shi Yi, Zheng You-Dou. MOCVD growth and characteristics of high quality AlGaN used in the DBR structure of ultraviolet detector. Acta Physica Sinica,
2007, 56(11): 6717-6721.
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Chen Xin-Liang, Xue Jun-Ming, Zhang De-Kun, Sun Jian, Ren Hui-Zhi, Zhao Ying, Geng Xin-Hua. Effect of substrate temperature on the ZnO thin films as TCO in solar cells grown by MOCVD technique. Acta Physica Sinica,
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Wang Chong, Feng Qian, Hao Yue, Wan Hui. Effect of pre-metallization processing and annealing on Ni/Au Schottky contacts in AlGaN/GaN heterostructures. Acta Physica Sinica,
2006, 55(11): 6085-6089.
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Pan Jiao-Qing, Zhao Qian, Zhu Hong-Liang, Zhao Ling-Juan, Ding Ying, Wang Bao-Jun, Zhou Fan, Wang Lu-Feng, Wang Wei. Material growth and device fabrication of highly strained InGaAs/InGaAsP long wavelength distributed feedback lasers. Acta Physica Sinica,
2006, 55(10): 5216-5220.
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Hao Jian-Kui, Jiao Fei, Huang Sen-Lin, Zhu Feng, Zhao Kui. Studies on surface dry treatment for improving the performance of RF superconducting cavities. Acta Physica Sinica,
2005, 54(7): 3375-3379.
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Ma Hong, Chen Si-Hai, Jin Jin-Yan, Yi Xin-Jian, Zhu Guang-Xi. Study on 1.55μ m AlGaInAs-InP polarization-insensitive semiconductor optical amplifier and its temperature characterizatics. Acta Physica Sinica,
2004, 53(6): 1868-1872.
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Yuan Hong-Tao, Zhang Yao, Gu Jing-Hua. A study on the in-situ growth of highly oriented ZnO whisker. Acta Physica Sinica,
2004, 53(2): 646-650.
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Huang Jin-Song, Dong Xun, Liu Xiang-Lin, Xu Zhong-Ying, Ge Wei-Kun. A study of the growth and optical properties of AlInGaN alloys. Acta Physica Sinica,
2003, 52(10): 2632-2637.
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YUAN JIN-SHE, CHEN GUANG-DE, QI MING, LI AI-ZHEN, XU ZHUO. XPS AND AES INVESTIGATION OF GaN FILMS GROWN BY MBE. Acta Physica Sinica,
2001, 50(12): 2429-2433.
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ZHANG DE-HENG, LIU YUN-YAN, ZHANG DE-JUN. THE UV PHOTOCONDUCTIVITY OF n-TYPE GaN FILMSDEPOSITED BY MOCVD. Acta Physica Sinica,
2001, 50(9): 1800-1804.
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