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Zhang Hai-Bao, Chen Qiang. Recent progress of non-thermal plasma material surface treatment and functionalization. Acta Physica Sinica,
2021, 70(9): 095203.
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2020, 69(4): 048103.
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He Tian-Li, Wei Hong-Yuan, Li Cheng-Ming, Li Geng-Wei. Comparative study of n-GaN transition group refractory metal Ohmic electrode. Acta Physica Sinica,
2019, 68(20): 206101.
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Feng Bo, Deng Biao, Liu Le-Gong, Li Zeng-Cheng, Feng Mei-Xin, Zhao Han-Min, Sun Qian. Effect of plasma surface treatment on embedded n-contact for GaN-based blue light-emitting diodes grown on Si substrate. Acta Physica Sinica,
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Huang Ya-Ping, Yun Feng, Ding Wen, Wang Yue, Wang Hong, Zhao Yu-Kun, Zhang Ye, Guo Mao-Feng, Hou Xun, Liu Shuo. The reflectivity and ohmic contact resistivity of Ni/Ag/Ti/Au in contact with p-GaN. Acta Physica Sinica,
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2014, 63(13): 137802.
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2013, 62(20): 206801.
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Wang Xiao-Yong, Chong Ming, Zhao De-Gang, Su Yan-Mei. Two-dimensional hole gas in p-GaN/p-AlxGa1-xN heterojunctions and its influence on Ohmic contact. Acta Physica Sinica,
2012, 61(21): 217302.
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Pan Shu-Wan, Qi Dong-Feng, Chen Song-Yan, Li Cheng, Huang Wei, Lai Hong-Kai. Se ultrathin film growth on Si(100) substrate and its application in Ti/n-Si(100) ohmic contact. Acta Physica Sinica,
2011, 60(9): 098108.
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Wang Guang-Xu, Jiang Feng-Yi, Feng Fei-Fei, Liu Jun-Lin, Qiu Chong. N-polar n-type ohmic contact of GaN-based LED on Si substrate. Acta Physica Sinica,
2010, 59(8): 5706-5709.
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Huang Wei, Chen Zhi-Zhan, Chen Bo-Yuan, Zhang Jing-Yu, Yan Cheng-Feng, Xiao Bing, Shi Er-Wei. Effect of hydrofluoric acid etching time on Ni/6H-SiC contacts. Acta Physica Sinica,
2009, 58(5): 3443-3447.
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Ding Zhi-Bo, Wang Kun, Chen Tian-Xiang, Chen Di, Yao Shu-De. Investigation on the formation mechanism and diffusion of the electrode metal of oxidized Au/Ni/p-GaN ohmic contact in different alloying time. Acta Physica Sinica,
2008, 57(4): 2445-2449.
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Meng Kang, Jiang Sen-Lin, Hou Li-Na, Li Chan, Wang Kun, Ding Zhi-Bo, Yao Shu-De. Study of radiation damage in Mg+-implanted GaN. Acta Physica Sinica,
2006, 55(5): 2476-2481.
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Peng Dong-Sheng, Feng Yu-Chun, Wang Wen-Xin, Liu Xiao-Feng, Shi Wei, Niu Han-Ben. A new method to grow high quality GaN film by MOCVD. Acta Physica Sinica,
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Wang Chong, Feng Qian, Hao Yue, Wan Hui. Effect of pre-metallization processing and annealing on Ni/Au Schottky contacts in AlGaN/GaN heterostructures. Acta Physica Sinica,
2006, 55(11): 6085-6089.
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Xu Peng-Shou, Deng Rui, Pan Hai-Bin, Xu Fa-Qiang, Xie Chang-Kun, Li Yong-Hua, Liu Feng-Qin, K. Yibulaxin. Photoelectron diffraction study on the polarity of GaN surface. Acta Physica Sinica,
2004, 53(4): 1171-1176.
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2002, 51(3): 629-634.
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2002, 51(11): 2606-2611.
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