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本文制备了AlGaN/GaN HEMT器件中常规结构与带有纵向接触孔结构的两种接触电极，研究了该两种源欧姆接触模式对器件电学特性的影响. 在相同条件下进行快速退火，发现在750 ℃下退火30 s后，常规结构还没有形成欧姆接触，而带有纵向欧姆接触孔的接触电极与外延片已经形成了良好的欧姆接触. 同时，比较了Ti/Al/Ti/Au 和Ti/Al/Ni/Au电极退火后表面形态，Ti/Al/Ni/Au具有更好的表面形貌. 通过测试两种结构的HEMT器件后，发现采用纵向欧姆接触孔结构器件具有更高的跨导和饱和电流，但是也会在栅极电压为0.5–2 V之间产生严重的电流崩塌现象.In this paper, the AlGaN/GaN HEMT (high electron mobility transistors) with different ohmic contact structures are fabricated, and the effect of different ohmic contact pattern on GaN HEMT electrical properties is studied. A conventional ohmic contact electrode structure and a new ohmic contact structure with a contact hole are fabricated and subjected to rapid thermal annealing (RTA) in flowing N2. After different structured AlGaN/GaN HEMTs are annealed at 750 ℃ for 30 seconds, in HEMTs with a conventional structure ohmic contact still does not form while in the device with ohmic contact holes a good ohmic contact is already formed. Then the surface morphology of different multilayer electrode structures is measured. Comparing Ti/Al/Ti/Au with Ti/Al/Ni/Au, we can conclude that the structure Ti/Al/Ni/Au has a more smooth surface after annealing. After testing the HEMT devices with different structures, higher transconductance and saturation current are found for the devices with ohmic contact holes. But a serious current collapse phenomenon has been observed when the gate voltage is set between 0.5 V and 2 V.
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Keywords:
- AlGaN/GaN /
- high electron mobility transistors /
- ohmic contact
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[15] Gong X, Lv N, Hao Y, Li P X, Zhou X W, Chen H F 2007 Chinese Journal of Semiconductors 28 1097
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[1] Xie G, Edward X, Niloufar H, Zhang B, Fred Y F, Wai T N 2012 Chin. Phys. B 21 086105
[2] Kong X, Wei K, Liu G G, Liu X Y 2012 Chin. Phys. B 21 128501
[3] Duan B X, Yang Y T, Chen K J 2012 Acta Phys. Sin. 61 247302 (in Chinese) [段宝兴, 杨银堂, Chen K J 2012 物理学报 61 247302]
[4] Duan B X, Yang Y T 2014 Acta Phys. Sin. 63 57302 (in Chinese) [段宝兴, 杨银堂 2014 物理学报 63 57302]
[5] Mishra U K, Parikh P, Wu Y F 2002 Proceedings of the IEEE 90 1022
[6] Miller M A, Mohney S E 2007 Appl. Phys. Lett. 91 12103
[7] Dong Z, Wang J, Gong R, Liu S H, Wen C P, Yu M, Xu F J, Hao Y L, Shen B, Wang Y Y 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), Shanghai, November 1-4, 2010 p1359
[8] Van Daele B, Van Tendeloo G, Derluyn J, Shrivastava P, Lorenz A, Leys M R, Germain M 2006 Appl. Phys. Lett. 89 201908
[9] Van Daele B, Van Tendeloo G, Ruythooren W, Derluyn J, Leys M R, Germain M 2005 Appl. Phys. Lett. 87 61905
[10] Zhu Y X, Fan Y Y, Cao W W, Deng Y, Liu J P 2013 Chin. J. Lumin. 34 1362 (in Chinese) [朱彦旭, 范玉宇, 曹伟伟, 邓叶, 刘建朋 2013 发光学报 34 1362]
[11] Vetury R, Zhang N Q, Keller S, Mishra U K 2001 IEEE Transactions on Electron Devices 48 560
[12] Hasegawa H, Inagaki T, Ootomo S, Hashizume T 2003 Journal of Vacuum Science m& Technology B: Microelectronics and Nanometer Structures 21 1844
[13] Binari S C, Ikossi K, Roussos J A, Kruppa W, Park D, Dietrich H B, Koleske D D, Wickenden A E, Henry R L 2001 IEEE Transactions on Electron Devices 48 465
[14] Wei W, Lin R B, Feng Q, Hao Y 2008 Acta Phys. Sin. 57 467 (in Chinese) [魏巍, 林若兵, 冯倩, 郝跃 2008 物理学报 57 467]
[15] Gong X, Lv N, Hao Y, Li P X, Zhou X W, Chen H F 2007 Chinese Journal of Semiconductors 28 1097
[16] Lee B H, Lee S D, Kim S D, Hwang I S, Park H C, Park H M, Rhee J K 2001 Joural of The Electrochemical Society 148 592
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