Preparation of GaN nanowires by nonammonia method and their photoelectronic properties

Zhao Jun-Wei; Zhang Yue-Fei; Song Xue-Mei; Yan Hui; Wang Ru-Zhi

doi:10.7498/aps.63.117702

Abstract

Single-crystal hexagonal wurtzite GaN nanowires were successfully synthesized by using plasma-enhanced chemical vapor deposition (PECVD) via vapor-liquid-solid (V-L-S) mechanism, under the condition of non-ammonia at 1050 ℃. Raman spectra show that the as-synthesized nanowires have large disorder surface, in which there is a significantly small size effect. Furthermore, it is also observed that the prepared nanowires have typical photoluminescence characteristics and good field emission properties.

Keywords:

Authors and contacts

1.
Laboratory of Thin Film Materials, College of Materials Science and Engineering, Beijing University of Technology, Beijing 100124, China;
2.
Institute of Solid State Microstructures and Properties, Beijing University of Technology, Beijing 100124, China
Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 11274029, 11074017), the Importation and Development of High-Caliber Talents Project of Beijing Municipal Institutions, China (Grant No. CIT&TCD201204037), the Jing-Hua Talents Project of Beijing University of Technology, China (Grant No. 2014-JH-L07), the Beijing Nova program (Grant No. 2080B10), and the Foundation on the Creative Research Team Construction Promotion Project of Beijing Municipal Institution, China (Grant No. IDHT20140506).

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Cited By

[1]	David Tsivion, Mark Schvartzman, Ronit Popovitz-Biro, Palle von Huth, Ernesto Joselevich 2011 Science 333 1003
[2]	Yongho Choi, Mario Michan, Jason L Johnson, Ali Kashefian Naieni, Ant Ural 2012 J. Appl. Phys. 111 044308
[3]	Avit G, Lekhal K, Andre Y, Bougerol C, Reveret F, Leymarie J, Gil E, Monier G, Castelluci D, Trassoudaine A 2014 Nano Lett. 14 559
[4]	Chen C C, Li Y W, Ru Z S, Xue M W, Bo Y H 2013 Acta Phys. Sin. 62 77701 (in Chinese)[陈程程, 刘立英, 王如志, 宋雪梅, 王波, 严辉 2013 物理学报 62 77701]
[5]	Zhang M L, Yang R X, Li Z X, Cao X Z, Wang B Y, Wang X Hui 2013 Acta Phys.Sin. 62 117103 (in Chinese)[张明兰, 杨瑞霞, 李卓昕, 曹兴忠, 王宝义, 王晓晖 2013 物理学报 62 117103]
[6]	Han W Q, Fan S S, Li Q Q, Hu Y D 1997 Science 277 1287
[7]	Wang X H, Chang B K, Qian Y S, Gao P, Zhang Y J, Qiao J L, Du X Q 2011 Acta Phys. Sin. 60 057902 (in Chinese)[王晓晖, 常本康, 钱芸生, 高频, 张益军 2011 物理学报 60 057902]
[8]	Shi W S, Zhang Y F, Wang N, Lee C S, Lee S T 2001 Chem. Phys. Lett. 345 377
[9]	Peng H Y, Wang N, Zhou X T, Zheng Y F, Lee C S, Lee S T 2000 Chem. Phys. Lett. 327 263
[10]	Maoqi He, Indira Minus, Piezhen Zhou, Mohammed S N, Halpern J B 2000 Appl. Phys. Lett. 77 3731
[11]	Tevye Kuykendall, Peter Pauzauskie, Sangkwon Lee, Zhang Y F, Joshua Goldberger, Yan P D 2003 Nano Lett. 3 1063
[12]	Liu B D, Bando Y, Tang C C, Xu F F, Hu J Q, Golberg D 2005 J. Phys. Chem. B 109 17082
[13]	Wang Ying, Xue C S, Zhuang H Z, Wang Z P, Zhang D D, Huang Y L, Liu W J 2009 Applied Surface Science 255 7719
[14]	Dinh D V, Kang S M, Yang J H, Kim S W, Yoon D H 2009 J. Cryst. Growth 311 495
[15]	Yongho Choi, Mario Michan, Jason L Johnson, Ali Kashefian Naieni, Ant Ural 2012 J. Appl. Phys. 111 044308
[16]	Yang Y, Ling Y C, Wang G M, Lu X H, Tong Y X, Yat Li 2013 Nano scale 5 1820
[17]	Wang Y Q, Wang R Z, Li Y J, Zhang Y F, Zhu M K, Wang B B, Hui Yan 2013 Cryst. Eng. Comm. 15 1626
[18]	Chen C C, Yeh C C, Chen C H, Yu M Y, Liu H L, Wu J J, Chen K H, Chen L C, Peng J Y, Chen Y F 2001 J. Am. Chem. Soc. 123 2791
[19]	Jason L Johnson, Yongho Choi, Ant Ural 2008 J. Vac. Sci. Technol. B 26 1841
[20]	Wang B B, Dong G B, Xu X Z 2011 Applied Surface Science 258 1677
[21]	Voslker Schmidt, Ulrich Gösele 2007 Science 316 698
[22]	Wagner R S, Ellis W C 1964 Appl. Phys. Lett. 4 89
[23]	Peng H Y, Wang N, Zhou X T, Zheng Y F, Lee C S, Lee S T 2000 Chem. Phys. Lett. 327 263
[24]	Hannon J B, Kodambaka S, Ross F M, Tromp R M 2006 Nature 440 69
[25]	Li J Y, Chen X L, Cao Y G, Qiao Z Y, Lan Y C 2000 Applied Physics A Materials Science m& Processing 71 345
[26]	Liu H L, Chen C C, Chia C T, Yeh C C, Chen C H, Yu M Y, Keller S, Denbaars S P 2001 Chemical Physics Letters 345 245
[27]	Ogino T, Aoki M 1980 Jpn. J. Appl. Phys. 19 2395
[28]	Campbell I H, Fauchet P M 1986 Solid State Communications 58 739
[29]	Chang K W, Wu J J 2002 J. Phys. Chem. B 106 7796
[30]	Ghulam Nabi, Chuanbao Cao, Sajad Hussain, Waheed S Khan, Sagar R R, Zulfiqar Ali, Butt F K, Zahid Usman, Dapeng Yu 2012 Cryst. Eng. Comm. 14 8492
[31]	Lyu S C, Cha O H, Suh E K, Ruh H, Lee H J, Lee C J 2003 Chemical Physics Letters 367 136
[32]	Chin A H, Ahn T S, Li H W, Vaddiraju S, Bardeen C J, Ning C Z, Sunkara M K 2007 Nano Letters 7 626
[33]	Ng D K T, Hong M H, Tan L S, Zhu Y W, Sow C H 2007 Nanotechnology 18 375707
[34]	Gan H Y, Liu H B, Li Y J, Zhao Q, Li Y L, Wang S, Jiu T G, Wang N, He X R, Yu D P, Zhu D B 2005 J. Am. Chem. Soc. 127 12452
[35]	Dang C, Wang B B, Wang F Y 2009 Vacuum 83 1414

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Vol. 63, Issue 11 - 2014-06-05

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