Search

Article

x

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

Electrical characteristics of individual In-doped ZnO nanobelt field effect transistor

Tang Xin-Yue Gao Hong Pan Si-Ming Sun Jian-Bo Yao Xiu-Wei Zhang Xi-Tian

Citation:

Electrical characteristics of individual In-doped ZnO nanobelt field effect transistor

Tang Xin-Yue, Gao Hong, Pan Si-Ming, Sun Jian-Bo, Yao Xiu-Wei, Zhang Xi-Tian
PDF
Get Citation

(PLEASE TRANSLATE TO ENGLISH

BY GOOGLE TRANSLATE IF NEEDED.)

  • Back-gate field effect transistors based on In-doped ZnO individual nanobelts have been fabricated using the low-cost microgrid template method. The output (Ids-Vds) and transfer (Ids-Vgs) characteristic curves for the transistors are measured, and the mobility is derived to be 622 cm2· V-1· s-1. This value is obviously superior to those for most of materials including pure ZnO in the literature, and possible influence factors have also been discussed.
    • Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 11074060, 51172058), the Key Project of the Science Technology and Research of Education Bureau, Heilongjiang Province, China (Grant No. 12521z012), and the Graduate Students' Scientific Research Innovation Project of Heilongjiang Province, China (2013).
    [1]

    Chen K J, Hung F Y, Chang S J, Hu Z S 2009 Appl. Surf. Sci. 255 6308

    [2]

    Huang Y H, Zhang Y, Gu Y S, Bai X D, Qi J J, Liao Q L, Liu J 2007 J. Phys. Chem. C 111 9039

    [3]

    Phillips J M, Cava R J, Thomas G A, Carter S A, Kwo J, Siegrist T, Krajewski J J, Marshall J H, Peck W F, Jr., Rapkine D H 1995 Appl. Phys. Lett. 67 2246

    [4]

    Kim K J, Park Y R 2001 Appl. Phys. Lett. 78 475

    [5]

    Su J, Li H F, Huang Y H, Xing X J, Zhao J, Zhang Y 2011 Nanoscale 3 2182

    [6]

    Ahmad M, Zhao J, Iqbal J, Miao W, Xie L, Mo R, Zhu J 2009 J. Phys. D: Appl. Phys. 42 165406

    [7]

    Li L M, Li C C, Zhang J, Du Z F, Zou B S, Yu H C, Wang Y G, Wang T H 2007 Nanotechnology 18 225504

    [8]

    Maeng J, Heo S, Jo G, Choe M, Kim S, Hwang H, Lee Takhee 2009 Nanotechnology 20 095203

    [9]

    Cha S N, Jang J E, Choi Y, Amaratunga G A J, Ho G W, Welland M E, Hasko D G, Kang D J, Kim J M 2006 Appl. Phys. Lett. 89 263102

    [10]

    Cheng Y, Xiong P, Fields L, Zheng J P, Yang R S, Wang Z L 2006 Appl. Phys. Lett. 89 093114

    [11]

    Kim D H, Cho N G, Kim H G, Cho W Y 2007 J. Electrochem. Soc. 154 H939

    [12]

    De D, Manongdo J, See S, Zhang V, Guloy A, Peng H 2013 Nanotechnology 24 025202

    [13]

    Li M, Zhang H Y, Guo C X, Xu J B, Fu X J 2009 Chin. Phys. B 18 1594

    [14]

    Jiang W, Gao H, Xu L L 2012 Chin. Phys. Lett. 29 037102

    [15]

    Lang Y, Gao H, Jiang W, Xu L L, Hou H T 2012 Sens. Actuators A 174 43

    [16]

    Li M J, Gao H, Li J L, Wen J, Li K, Zhang W G 2013 Acta Phys. Sin. 62 187302(in Chinese) [李铭杰, 高红, 李江禄, 温静, 李凯, 张伟光 2013 物理学报 62 187302]

    [17]

    Yuan Z, Gao H, Xu LL, Chen T T, Lang Y 2012 Acta Phys. Sin. 61 057201(in Chinese) [袁泽, 高红, 徐玲玲, 陈婷婷, 郎颖 2012 物理学报 61 057201]

    [18]

    Zhou J, Gu Y D, Hu Y F, Mai W J, Yeh P H, Bao G, Sood A K, Polla D L, Wang Z L 2009 Appl. Phys. Lett. 94 191103

    [19]

    Wan Q, Huang J, Lu A, Wang T H 2008 Appl. Phys. Lett. 93 103109

    [20]

    Jie J S, Wang G Z, Han X H, Yu Q X, Liao Y, Li G P, Hou J G 2004 Chem. Phys. Lett. 387 466

    [21]

    Jabeen M, Iqbal M A, Kumar R V, Ahmed M, Javed M T 2014 Chin. Phys. B 23 018504

    [22]

    Chen Y T, Cheng C L, Chen Y F 2008 Nanotechnology. 19 445707

    [23]

    Park W I, Kim J S, Yi G C, Bae M H, Lee H J 2004 Appl. Phys. Lett. 85 5052

    [24]

    Ma R M, Dai L, Huo H B, Yang W Q, Qin G G 2006 Appl. Phys. Lett. 89 203120

    [25]

    Fan Z Y, Wang D W, Chang P C, Tseng W Y, Lu J G 2004 Appl. Phys. Lett. 85 5923

    [26]

    Hsu C L, Tsai T Y 2011 J. Electrochem. Soc. 158 K20

    [27]

    Wu Y, Girgis E, Ström V, Voit W, Belova L, Rao K V 2011 Phys. Status Solidi A 208 206

    [28]

    Li S S, Zhang Z, Huang J Z, Feng X P, Liu R X 2011 Acta Phys. Sin. 60 097405(in Chinese) [李世帅, 张仲, 黄金昭, 冯秀鹏, 刘如喜 2011 物理学报 60 097405]

    [29]

    Shinde S S, Shinde P S, Bhosale C H, Rajpure K Y 2008 J. D: Appl. Phys. 41 105109

    [30]

    Fritz S E, Kelley T W, Frisbie C D 2005 J. Phys. Chem. B 109 10574

    [31]

    Yang H, Yang C, Kim S H, Jang M, Park C E 2010 ACS Appl. Mat. Interfaces 2 391

  • [1]

    Chen K J, Hung F Y, Chang S J, Hu Z S 2009 Appl. Surf. Sci. 255 6308

    [2]

    Huang Y H, Zhang Y, Gu Y S, Bai X D, Qi J J, Liao Q L, Liu J 2007 J. Phys. Chem. C 111 9039

    [3]

    Phillips J M, Cava R J, Thomas G A, Carter S A, Kwo J, Siegrist T, Krajewski J J, Marshall J H, Peck W F, Jr., Rapkine D H 1995 Appl. Phys. Lett. 67 2246

    [4]

    Kim K J, Park Y R 2001 Appl. Phys. Lett. 78 475

    [5]

    Su J, Li H F, Huang Y H, Xing X J, Zhao J, Zhang Y 2011 Nanoscale 3 2182

    [6]

    Ahmad M, Zhao J, Iqbal J, Miao W, Xie L, Mo R, Zhu J 2009 J. Phys. D: Appl. Phys. 42 165406

    [7]

    Li L M, Li C C, Zhang J, Du Z F, Zou B S, Yu H C, Wang Y G, Wang T H 2007 Nanotechnology 18 225504

    [8]

    Maeng J, Heo S, Jo G, Choe M, Kim S, Hwang H, Lee Takhee 2009 Nanotechnology 20 095203

    [9]

    Cha S N, Jang J E, Choi Y, Amaratunga G A J, Ho G W, Welland M E, Hasko D G, Kang D J, Kim J M 2006 Appl. Phys. Lett. 89 263102

    [10]

    Cheng Y, Xiong P, Fields L, Zheng J P, Yang R S, Wang Z L 2006 Appl. Phys. Lett. 89 093114

    [11]

    Kim D H, Cho N G, Kim H G, Cho W Y 2007 J. Electrochem. Soc. 154 H939

    [12]

    De D, Manongdo J, See S, Zhang V, Guloy A, Peng H 2013 Nanotechnology 24 025202

    [13]

    Li M, Zhang H Y, Guo C X, Xu J B, Fu X J 2009 Chin. Phys. B 18 1594

    [14]

    Jiang W, Gao H, Xu L L 2012 Chin. Phys. Lett. 29 037102

    [15]

    Lang Y, Gao H, Jiang W, Xu L L, Hou H T 2012 Sens. Actuators A 174 43

    [16]

    Li M J, Gao H, Li J L, Wen J, Li K, Zhang W G 2013 Acta Phys. Sin. 62 187302(in Chinese) [李铭杰, 高红, 李江禄, 温静, 李凯, 张伟光 2013 物理学报 62 187302]

    [17]

    Yuan Z, Gao H, Xu LL, Chen T T, Lang Y 2012 Acta Phys. Sin. 61 057201(in Chinese) [袁泽, 高红, 徐玲玲, 陈婷婷, 郎颖 2012 物理学报 61 057201]

    [18]

    Zhou J, Gu Y D, Hu Y F, Mai W J, Yeh P H, Bao G, Sood A K, Polla D L, Wang Z L 2009 Appl. Phys. Lett. 94 191103

    [19]

    Wan Q, Huang J, Lu A, Wang T H 2008 Appl. Phys. Lett. 93 103109

    [20]

    Jie J S, Wang G Z, Han X H, Yu Q X, Liao Y, Li G P, Hou J G 2004 Chem. Phys. Lett. 387 466

    [21]

    Jabeen M, Iqbal M A, Kumar R V, Ahmed M, Javed M T 2014 Chin. Phys. B 23 018504

    [22]

    Chen Y T, Cheng C L, Chen Y F 2008 Nanotechnology. 19 445707

    [23]

    Park W I, Kim J S, Yi G C, Bae M H, Lee H J 2004 Appl. Phys. Lett. 85 5052

    [24]

    Ma R M, Dai L, Huo H B, Yang W Q, Qin G G 2006 Appl. Phys. Lett. 89 203120

    [25]

    Fan Z Y, Wang D W, Chang P C, Tseng W Y, Lu J G 2004 Appl. Phys. Lett. 85 5923

    [26]

    Hsu C L, Tsai T Y 2011 J. Electrochem. Soc. 158 K20

    [27]

    Wu Y, Girgis E, Ström V, Voit W, Belova L, Rao K V 2011 Phys. Status Solidi A 208 206

    [28]

    Li S S, Zhang Z, Huang J Z, Feng X P, Liu R X 2011 Acta Phys. Sin. 60 097405(in Chinese) [李世帅, 张仲, 黄金昭, 冯秀鹏, 刘如喜 2011 物理学报 60 097405]

    [29]

    Shinde S S, Shinde P S, Bhosale C H, Rajpure K Y 2008 J. D: Appl. Phys. 41 105109

    [30]

    Fritz S E, Kelley T W, Frisbie C D 2005 J. Phys. Chem. B 109 10574

    [31]

    Yang H, Yang C, Kim S H, Jang M, Park C E 2010 ACS Appl. Mat. Interfaces 2 391

  • [1] Huang Hong-Fei, Yao Yang, Yao Cheng-Jun, Hao Xiang, Wu Yin-Zhong. Doping effect and ferroelectricity of nanoribbons of In2Se3 monolayer. Acta Physica Sinica, 2022, 71(19): 197701. doi: 10.7498/aps.71.20220654
    [2] Di Lin-Jia, Dai Xian-Ying, Song Jian-Jun, Miao Dong-Ming, Zhao Tian-Long, Wu Shu-Jing, Hao Yue. Calculations of energy band structure and mobility in critical bandgap strained Ge1-xSnx based on Sn component and biaxial tensile stress modulation. Acta Physica Sinica, 2018, 67(2): 027101. doi: 10.7498/aps.67.20171969
    [3] Zhu Hui-Qun, Li Yi, Ye Wei-Jie, Li Chun-Bo. Thermochromic properties of W-doped VO2/ZnO nanocomposite films with flower structures. Acta Physica Sinica, 2014, 63(23): 238101. doi: 10.7498/aps.63.238101
    [4] Wu Ping, Zhang Jie, Li Xi-Feng, Chen Ling-Xiang, Wang Lei, Lü Jian-Guo. Ultraviolet photoresponse of ZnO thin-film transistor fabricated at room temperature. Acta Physica Sinica, 2013, 62(1): 018101. doi: 10.7498/aps.62.018101
    [5] Wu Zi-Hua, Xie Hua-Qing, Zeng Qing-Feng. Preparation and thermoelectric properties of Ag-ZnO nanocomposites synthesized by means of sol-gel. Acta Physica Sinica, 2013, 62(9): 097301. doi: 10.7498/aps.62.097301
    [6] Li Ming-Jie, Gao Hong, Li Jiang-Lu, Wen Jing, Li Kai, Zhang Wei-Guang. Electrical properties of single ZnO nanobelt in low temperature. Acta Physica Sinica, 2013, 62(18): 187302. doi: 10.7498/aps.62.187302
    [7] Qin Jie-Ming, Tian Li-Fei, Zhao Dong-Xu, Jiang Da-Yong, Cao Jian-Ming, Ding Meng, Guo Zhen. Comprehensive Survey for the Frontier Disciplines. Acta Physica Sinica, 2011, 60(10): 107307. doi: 10.7498/aps.60.107307
    [8] Qi Ning, Wang Yuan-Wei, Wang Dong, Wang Dan-Dan, Chen Zhi-Quan. Positron annihilation study of the microstructure of Co doped ZnO nanocrystals. Acta Physica Sinica, 2011, 60(10): 107805. doi: 10.7498/aps.60.107805
    [9] Li Yi, Zhu Hui-Qun, Zhou Sheng, Huang Yi-Ze, Tong Guo-Xiang, Sun Ruo-Xi, Zhang Yu-Ming, Zheng Qiu-Xin, Li Liu, Shen Yu-Jian, Fang Bao-Ying. Study on thermochromic properties of VO2/ZnO nanocrystalline composite films. Acta Physica Sinica, 2011, 60(9): 098104. doi: 10.7498/aps.60.098104
    [10] Pan Feng, Ding Bin-Feng, Fa Tao, Cheng Feng-Feng, Zhou Sheng-Qiang, Yao Shu-De. Superparamagnetic nanoparticles formed in Fe-implanted ZnO. Acta Physica Sinica, 2011, 60(10): 108501. doi: 10.7498/aps.60.108501
    [11] Zhang Fu-Chun, Zhang Wei-Hu, Dong Jun-Tang, Zhang Zhi-Yong. Electronic structure and magnetism of Cr-doped ZnO nanowires. Acta Physica Sinica, 2011, 60(12): 127503. doi: 10.7498/aps.60.127503
    [12] Shao Zheng-Zheng, Wang Xiao-Feng, Zhang Xue-Ao, Chang Sheng-Li. Piezoelectric discharge characteristic of ZnO nanorod studied with atomic force microscopy. Acta Physica Sinica, 2010, 59(1): 550-554. doi: 10.7498/aps.59.550
    [13] Zhang Wei, Li Meng-Ke, Wei Qiang, Cao Lu, Yang Zhi, Qiao Shuang-Shuang. Fabrication and I-V characteristics of ZnO nanowire-based field effect transistors. Acta Physica Sinica, 2008, 57(9): 5887-5892. doi: 10.7498/aps.57.5887
    [14] Huang Jin-Hua, Zhang Kun, Pan Nan, Gao Zhi-Wei, Wang Xiao-Ping. Enhancing ultraviolet photoresponse of ZnO nanowire device by surface functionalization. Acta Physica Sinica, 2008, 57(12): 7855-7859. doi: 10.7498/aps.57.7855
    [15] Chang Yan-Ling, Zhang Qi-Feng, Sun Hui, Wu Jin-Lei. Development and behavior study of a ZnO nanowire-based electroluminescence device with double insulating-layer structure. Acta Physica Sinica, 2007, 56(4): 2399-2404. doi: 10.7498/aps.56.2399
    [16] Li Ping-Jian, Zhang Wen-Jing, Zhang Qi-Feng, Wu Jin-Lei. Nanoelectronic logic circuits with carbon nanotube transistors. Acta Physica Sinica, 2007, 56(2): 1054-1060. doi: 10.7498/aps.56.1054
    [17] Li Hui, Xie Er-Qing, Zhang Hong-Liang, Pan Xiao-Jun, Zhang Yong-Zhe. Optical properties of ZnO and MgxZn1-xO nanoparticles prepared by flame spray synthesis. Acta Physica Sinica, 2007, 56(6): 3584-3588. doi: 10.7498/aps.56.3584
    [18] Dai Yue-Hua, Chen Jun-Ning, Ke Dao-Ming, Sun Jia-E, Hu Yuan. An analytical model of mobility in nano-scaled n-MOSFETs. Acta Physica Sinica, 2006, 55(11): 6090-6094. doi: 10.7498/aps.55.6090
    [19] Li Ping-Jian, Zhang Wen-Jing, Zhang Qi-Feng, Wu Jin-Lei. The influence of contact metal in carbon nanotube transistor. Acta Physica Sinica, 2006, 55(10): 5460-5465. doi: 10.7498/aps.55.5460
    [20] Yang Xiu-Jian, Shi Chao-Shu, Xu Xiao-Ling. . Acta Physica Sinica, 2002, 51(12): 2871-2874. doi: 10.7498/aps.51.2871
Metrics
  • Abstract views:  5178
  • PDF Downloads:  2538
  • Cited By: 0
Publishing process
  • Received Date:  27 March 2014
  • Accepted Date:  24 May 2014
  • Published Online:  05 October 2014

/

返回文章
返回