Characterization of phase separation on AlGaN surfaces by <i>in-situ</i> photoluminescence spectroscopy and high spatially resolved surface potential images

Liu Bo-Yang; Song Wen-Tao; Liu Zheng-Hui; Sun Xiao-Juan; Wang Kai-Ming; Wang Ya-Kun; Zhang Chun-Yu; Chen Ke-Bei; Xu Geng-Zhao; Xu Ke; Li Da-Bing

doi:10.7498/aps.69.20200099

Abstract

AlGaN is a key material for deep ultraviolet optoelectronic and electronic devices. With the increase of the Al composition ratio, the phase separation on the surface, caused by small-scale compositional fluctuations, is prone to affecting the performance of the device. In order to explore the mechanism of the phase separation on a nanoscale, the AlGaN wafers with different quantities of Al compositions are investigated by the confocal photoluminescence spectroscopy and the single-pass Kelvin force probe microscopy. The composition ratios of Al for the three samples are about 0.3, 0.5, and 0.7, respectively. The single-pass Kelvin force probe microscopy based on dual-frequency phase-locking is used to obtain high spatially resolved (about 10 nm) surface potential images. In the area where the phase separation phenomenon is obvious in the photoluminescence spectrum, the sharp change of the surface potential can be observed at the irregular steps and the edges of the surface pits. The potential changes can be ascribed to the inhomogeneous composition distribution. In the area where the topography turns into step flow, the surface pits shrink and merge. No obvious surface potential domain boundaries appear at the steps nor on the edges of the surface pits. Meanwhile, the phase separation phenomenon in the photoluminescence spectrum almost disappears. Our experiments show that the steps and the edges of the surface pits on AlGaN surfaces are main reasons for small-scale compositional fluctuations and the phase separation in the spectrum. Combining with in-situ confocal photoluminescence spectra, high spatially resolved surface potential image by single-pass Kelvin force probe microscopy is an effective method to characterize the phase separation on AlGaN surface on a nanoscale.

Keywords:

Authors and contacts

1.
School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China
2.
Suzhou Institue of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
3.
Nano Science and Technology Institute, University of Science and Technology of China, Suzhou 215123, China
4.
Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China

Corresponding author: Liu Zheng-Hui, zhliu2007@sinano.ac.cn ; Xu Ke, kxu2006@sinano.ac.cn ;

Funds: Project supported by the National Key Research and Development Program of China (Grant No. 2016 YFB0400101), the National Natural Science Foundation of China (Grant No. 11804369), and the CAS Key Technology Talent Program

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References

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Cited By

图 1 (a) Al_0.3Ga_0.7N样品剖面的SEM图; (b) Al_0.5Ga_0.5N样品剖面的SEM图; (c) Al_0.7Ga_0.3N样品剖面的SEM图; (a), (b)和(c)图中分别用红框和黄框标记了AlGaN层与AlN层的位置, 并在框中显示了测量得到的厚度; (d)中从左至右分别为Al_0.3Ga_0.7N, Al_0.5Ga_0.5N和Al_0.7Ga_0.3N样品利用椭偏仪测量得到的吸收系数拟合带隙的结果

Figure 1. (a) The SEM image of the Al_0.3Ga_0.7N Sample; (b) the SEM image of the Al_0.5Ga_0.5N Sample; (c) the SEM image of the Al_0.7Ga_0.3N Sample. The AlGaN and AlN layers in (a), (b) and (c) are marked with red and yellow squares respectively, in addition with the thickness labeled. (d) From left to right, the curves show the absorption coefficients of Al_0.3Ga_0.7N, Al_0.5Ga_0.5N and Al_0.7Ga_0.3N samples, respectively. The absorption coefficients are measured by an ellipsometer and the band gaps are fitted out and labeled.

DownLoad: Full-Size Img PowerPoint

图 2 Al_0.5Ga_0.5N样品表面有明显相分离现象的区域　(a)该区域的典型荧光光谱; (b)上图和下图分别为形貌和表面电势的剖面图, 对应于图(e)中标记1的位置和图(f)中标记2的位置; 如红线所示, 下图中电势剖面图的下降沿宽度约为19 nm, 说明了我们采用的双频单次扫描开尔文探针显微术的典型空间分辨率; (c)和(d)扫描尺寸为10 μm时的表面形貌像及对应表面电势像; (e) 和 (f)扫描尺寸为3 μm时的表面形貌像及对应表面电势像; 图(e)中白色横线标记1和图(f)中标记2对应同一位置

Figure 2. The area with obvious phase separation phenomenon on the Al_0.5Ga_0.5N sample surface. (a) A typical photoluminescence spectrum of the area. (b) Profiles of the topography and the surface potential shown in plot 1 and 2, respectively. The profile of the topography is extracted from mark 1 in panel (e). The profile of the surface potential is extracted from the mark 2 in panel (f). The width of the falling edge marked by red lines in the profile of the surface potential is about 19 nm. This value presents the typical spatial resolution of the single-pass Kelvin force probe microscopy we applied. (c) and (d) The topography image and the surface potential image, respectively, obtained at the same area with a scan size of 10 μm. (e) and (f) The topography image and the surface potential image, respectively, obtained at the same area with a scan size of 3 μm. The white lines marked by 1 in panel (e) and 2 in panel (f) are picked at the same position.

DownLoad: Full-Size Img PowerPoint

图 3 Al_0.5Ga_0.5N样品表面没有明显相分离现象的区域　(a) 该区域的典型荧光光谱; (b)上图和下图分别为形貌和表面电势的剖面图, 对应图(e)中标记1的位置和图(f)中标记2的位置; (c) 和 (d) 扫描尺寸为10 μm时的表面形貌像及对应表面电势像; (e)和(f) 扫描尺寸为3 μm时的表面形貌像及对应表面电势像; 图(e)中白色横线标记1和图(f)中标记2对应同一位置

Figure 3. The area without phase separation phenomenon on the Al_0.5Ga_0.5N sample surface. (a) A typical photoluminescence spectrum of the area. (b) Profiles of the topography and the surface potential shown in the plot 1 and 2, respectively. The profile of the topography is extracted from mark 1 in panel (e). The profile of the surface potential is extracted from the mark 2 in panel (f). (c) and (d) The topography image and the surface potential image, respectively, obtained at the same area with a scan size of 10 μm. (e) and (f) The topography image and the surface potential image, respectively, obtained at the same area with a scan size of 3 μm. The white lines marked by 1 in panel (e) and 2 in panel (f) are picked at the same position.

DownLoad: Full-Size Img PowerPoint

图 4 Al_0.3Ga_0.7N样品表面　(a) 该区域的典型荧光光谱; (b)上图和下图分别为形貌和表面电势的剖面图, 对应图(e)中标记1的位置和图(f)中标记2的位置; (c)和(d)扫描尺寸为10 μm时的表面形貌像及对应表面电势像; (e)和(f)扫描尺寸为3 μm时的表面形貌像及对应表面电势像; 图(e) 中白色横线标记1和图(f)中标记2对应同一位置

Figure 4. The area on the Al_0.3Ga_0.7N sample surface. (a) A typical photoluminescence spectrum of the area. (b) Profiles of the topography and the surface potential shown in the plot 1 and 2, respectively. The profile of the topography is extracted from mark 1 in panel (e). The profile of the surface potential is extracted from the mark 2 in panel (f). (c) and (d) The topography image and the surface potential image, respectively, obtained at the same area with a scan size of 10 μm. (e) and (f) The topography image and the surface potential image, respectively, obtained at the same area with a scan size of 3 μm. The white lines marked by 1 in panel (e) and 2 in panel (f) are picked at the same position.

DownLoad: Full-Size Img PowerPoint

图 5 Al_0.7Ga_0.3N样品表面　(a) 该区域的典型荧光光谱; (b)上图和下图分别为形貌和表面电势的剖面图, 对应图(e)中标记1的位置和图(f)中标记2的位置; (c)和(d)扫描尺寸为10 μm的表面形貌像及对应表面电势像; (e) 和 (f)扫描尺寸为3 μm时的表面形貌像及对应表面电势像; 图(e) 中白色横线标记1和图(f)中标记2对应同一位置

Figure 5. The area on the Al_0.7Ga_0.3N sample surface. (a) A typical photoluminescence spectrum of the area. (b) profiles of the topography and the surface potential shown in the plot 1 and 2, respectively. The profile of the topography is extracted from mark 1 in panel (e). the profile of the surface potential is extracted from the mark 2 in panel (f). (c) and (d) the topography image and the surface potential image, respectively, obtained at the same area with a scan size of 10 μm. (e) and (f) the topography image and the surface potential image, respectively, obtained at the same area with a scan size of 3 μm. The white lines marked by 1 in panel (e) and 2 in panel (f) are picked at the same position.

DownLoad: Full-Size Img PowerPoint

[1]	Cai Q, Li Q, Li M, Tang Y, Wang J, Xue J J, Chen D J, Lu H, Zhang R, Zheng Y D 2019 IEEE Photonics J. 11 6801507 Google Scholar
[2]	Li D B, Jiang K, Sun X J, Guo C L 2018 Adv. Opt. Photonics 10 43 Google Scholar
[3]	Yang W H, Li J C, Lin W, Li S P, Chen H Y, Liu D Y, Yang X, Kang J Y 2013 AIP Adv. 3 052103 Google Scholar
[4]	刘静, 王琳倩, 黄忠孝 2019 物理学报 68 248501 Google Scholar Liu J, Wang L Q, Huang Z X 2019 Acta Phys. Sin. 68 248501 Google Scholar
[5]	张志荣, 房玉龙, 尹甲运, 郭艳敏, 王波, 王元刚, 李佳, 芦伟立, 高楠, 刘沛, 冯志红 2018 物理学报 67 076801 Google Scholar Zhang Z R, Fang Y L, Yin J Y, Guo Y M, Wang B, Wang Y G, Li J, Lu W L, Gao N, Liu P, Feng Z H 2018 Acta Phys. Sin. 67 076801 Google Scholar
[6]	唐文昕, 郝荣晖, 陈扶, 于国浩, 张宝顺 2018 物理学报 67 198501 Google Scholar Tang W X, Hao R H, Chen F, Yu G H, Zhang B S 2018 Acta Phys. Sin. 67 198501 Google Scholar
[7]	张力, 林志宇, 罗俊, 王树龙, 张进成, 郝跃, 戴扬, 陈大正, 郭立新 2017 物理学报 66 247302 Google Scholar Zhang L, Lin Z Y, Lou J, Wang S L, Zhang J C, Hao Y, Dai Y, Chen D Z, Guo L X 2017 Acta Phys. Sin. 66 247302 Google Scholar
[8]	郭海君, 段宝兴, 袁嵩, 谢慎隆, 杨银堂 2017 物理学报 66 167301 Google Scholar Guo H J, Duan B X, Yuan S, Xie S L, Yang Y T 2017 Acta Phys. Sin. 66 167301 Google Scholar
[9]	Chen P, Chua S J, Miao Z L 2004 J. Cryst. Growth 273 74 Google Scholar
[10]	Pinos A, Liuolia V, Marcinkevicius S, Yang J, Gaska R, Shur M S 2011 J. Appl. Phys. 109 113516 Google Scholar
[11]	Wang X L, Zhao D G, Jiang D S, Yang H, Liang J W, Jahn U, Ploog K 2007 J. Phys. Condens. Matter 19 176005 Google Scholar
[12]	Bryan I, Bryan Z, Mita S, Rice A, Hussey L, Shelton C, Tweedie J, Maria J P, Collazo R, Sitar Z 2016 J. Cryst. Growth 451 65 Google Scholar
[13]	Jiang K, Sun X J, Ben J W, Shi Z M, Jia Y P, Wu Y, Kai C H, Wang Y, Li D B 2019 Crystengcomm 21 4864 Google Scholar
[14]	Luong T T, Ho Y-T, Wong Y Y, Chang S, Chang E Y 2018 Microelectron. Reliab. 83 286 Google Scholar
[15]	Knauer A, Kueller V, Zeimer U, Weyers M, Reich C, Kneissl M 2013 Phys. Status Solidi A 210 451 Google Scholar
[16]	Sun Q, Wang H, Jiang D S, Jin R Q, Huang Y, Zhang S M, Yang H, Jahn U, Ploog K H 2006 J. Appl. Phys. 100 123101 Google Scholar
[17]	Marcinkevicius S, Jain R, Shatalov M, Yang J, Shur M, Gaska R 2014 Appl. Phys. Lett. 105 241108 Google Scholar
[18]	Pinos A, Marcinkevicius S, Liuolia V, Yang J W, Gaska R, Shur M S 2012 Physica Status Solidi C: Current Topics in Solid State Physics Royal Inst Technol (KTH), Stockholm, Sweden, Jun 19–23, 2011 p1617
[19]	Tamulaitis G 2011 Mater. Sci.-Medzg. 17 343 Google Scholar
[20]	Li G Y, Mao B, Lan F, Liu L M 2012 Rev. Sci. Instrum. 83 113701 Google Scholar
[21]	Liu Y, Li Q X, Wan L Y, Kucukgok B, Ghafari E, Ferguson I T, Zhang X, Wang S C, Feng Z C, Lu N 2017 Appl. Surf. Sci. 421 389 Google Scholar
[22]	Tauc J, Grigorovici R, Vancu A 1966 Phys. Status Solidi 15 627 Google Scholar
[23]	Koide Y, Itoh H, Khan M R H, Hiramatu K, Sawaki N, Akasaki I 1987 J. Appl. Phys. 61 4540 Google Scholar
[24]	Takeuchi K, Adachi S, Ohtsuka K 2010 J. Appl. Phys. 107 023306 Google Scholar
[25]	Nepal N, Li J, Nakarmi M L, Lin J Y, Jiang H X 2005 Appl. Phys. Lett. 87 242104 Google Scholar
[26]	Nepal N, Nakarmi M L, Lin J Y, Jiang H X 2006 Appl. Phys. Lett. 89 092107 Google Scholar
[27]	Sun Q, Huang Y, Wang H, Chen J, Jin R Q, Zhang S M, Yang H, Jiang D S, Jahn U, Ploog K H 2005 Appl. Phys. Lett. 87 121914 Google Scholar

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Characterization of phase separation on AlGaN surfaces by in-situ photoluminescence spectroscopy and high spatially resolved surface potential images

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Corresponding author: Liu Zheng-Hui, zhliu2007@sinano.ac.cn ; Xu Ke, kxu2006@sinano.ac.cn ;

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Characterization of phase separation on AlGaN surfaces by in-situ photoluminescence spectroscopy and high spatially resolved surface potential images

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Corresponding author: Liu Zheng-Hui, zhliu2007@sinano.ac.cn ; Xu Ke, kxu2006@sinano.ac.cn ;

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