Design and simulation of Mg<sub>2</sub>Si/Si avalanche photodiode

Wang Ao-Shuang; Xiao Qing-Quan; Chen Hao; He An-Na; Qin Ming-Zhe; Xie Quan

doi:10.7498/aps.70.20201923

Abstract

InGaAs and HgCdTe materials are widely used in short wave infrared photodetectors, which contain heavy metal elements. The massive use of the heavy metal elements naturally results in their scarcity, and the nonnegligible environmental pollution. Searching for other suitable materials for infrared devices becomes a key to solving the above problems. As a kind of abundant and eco-friendly material, Mg₂Si has a high absorption coefficient in the near-infrared band. Its application in infrared detector makes it possible to replace the infrared devices containing toxic elements on the market in the future. The Mg₂Si/Si avalanche photodiode(APD) with separation structure of absorption layer, charge layer and multiplication layer, with Mg₂Si serving as the absorption layer, is constructed by using the Atlas module in Silvaco software. The effects of the thickness and doping concentration of the charge layer and multiplier layer on the distribution of internal electric field, punch-through voltage, breakdown voltage (V_b), C-V characteristics, and transient response of Mg₂Si/Si SACM-APD are simulated. The effects of bias voltage on the I-V characteristics and spectral response are analyzed. The punch-through voltage, breakdown voltage, dark current density, gain coefficient (M_n) and the current amplification factor (M) after avalanche effect of APD are obtained after the structure optimization. According to the simulation results, the spectral response wavelength of the device is extended to 1.6 μm, so the selection of Mg₂Si as the absorption layer effectively extends the spectral response band of Si based APD. When the wavelength of incident light is 1.31 µm and the optical power is 10 mW/cm², the obtained punch-through voltage is 17.5 V, and the breakdown voltage is 50 V. When the bias voltage is 47.5 V (0.95V_b), the peak value of spectral response is 25 A/W at a wavelength of 1.1 μm, a density of dark current is about 3.6 × 10^–5 A/cm², a multiplication factor M_n is 19.6, and M_n achieves a maximum value of 102 when the device is broken down. Meanwhile, the current amplification factor M after avalanche effect is 75.4, and the current gain effect of the SACM structure is obvious. The peak value of spectral response for the pin-type photodiode in the previous study is only 0.742 A/W. Comparing with the pin-type photodiode, the spectral response of Mg₂Si/Si SACM-APD is greatly improved. In this work, the structure parameters of the device are optimized, which lays a nice foundation for fabricating the high-performance devices.

Keywords:

Authors and contacts

Institute of Advanced Optoelectronic Materials and Technology, College of Big Data and Information Engineering, Guizhou University, Guiyang 550025, China

Corresponding author: Xiao Qing-Quan, qqxiao@gzu.edu.cn

Funds: Project supported by the Foundation for Sci-tech Activities for the Overseas Chinese Returnees in Guizhou Province, China (Grant No. [2018]09), the High-level Creative Talent Training Program in Guizhou Province of China (Grant No. [2015]4015), and the Graduate Research Fund in Guizhou Province of China (Grant No. [2020]035)

FullText HTML : translate this paragraph

References

[1]	莫秋燕, 赵彦立 2011 物理学报 60 072902 Google Scholar Mo Q Y, Zhao Y L 2011 Acta Phys. Sin. 60 072902 Google Scholar
[2]	Park S M, Grein C H 2019 J. Electron. Mater. 48 8163 Google Scholar
[3]	Rogalski A 2005 Rep. Prog. Phys. 68 2267 Google Scholar
[4]	Xu S J, Chua S J, Mei T, Wang X C, Zhang X H, Karunasiri G, Fan W J, Wang C H, Jiang J, Wang S, Xie X G 1998 Appl. Phys. Lett. 73 3153 Google Scholar
[5]	Rogalski A 2002 Infrared. Phys. Technol. 43 187 Google Scholar
[6]	Rogalski A 2011 Infrared. Phys. Technol. 54 136 Google Scholar
[7]	胡伟达, 李庆, 陈效双, 陆卫 2019 物理学报 68 120701 Google Scholar Hu W D, Li Q, Chen X S, Lu W 2019 Acta Phys. Sin. 68 120701 Google Scholar
[8]	LaBotz R 1963 J. Electrochem. Soc. 110 127 Google Scholar
[9]	Kato T, Sago Y, Fujiwara H 2011 J. Appl. Phys. 110 063723 Google Scholar
[10]	Borisenko V E 2000 Semiconducting Silicides (New York: Springer) pp137−179
[11]	Au-Yang M Y, Cohen M L 1969 Phys. Rev. 178 1358 Google Scholar
[12]	Liao Y F, Fan M H, Xie Q, Xiao Q Q, Xie J, Yu H, Wang S L, Ma X Y 2018 Appl. Surf. Sci. 403 302 Google Scholar
[13]	Janega P L, McCaffrey J, Landheer D, Buchanan M, Denhoff M, Mitchel D 1988 Appl. Phys. Lett. 53 2056 Google Scholar
[14]	Udono H, Tajima H, Uchikoshi M, Itakura M 2015 Jpn. J. Appl. Phys. 54 07JB06 Google Scholar
[15]	Udono H, Yamanaka Y, Uchikoshi M, Isshiki M 2013 J. Phys. Chem. Solids. 74 311 Google Scholar
[16]	El-Amir A A M, Ohsawa T, Nabatame T, Ohia A, Wadaa Y, Nakamuraa M, Fua K, Shimamuraa K, Ohashia N 2019 Mater. Sci. Semicond. Process. 91 222 Google Scholar
[17]	陈豪, 肖清泉, 谢泉, 王坤, 史娇娜 2019 材料导报 33 3358 Google Scholar Chen H, Xiao Q Q, Xie Q, Wang K, Shi J N, 2019 Mater. Rep. 33 3358 Google Scholar
[18]	Forrest S R, Kim O K, Smith R G 1982 Appl. Phys. Lett. 41 95 Google Scholar
[19]	张海燕, 汪琳莉, 吴琛怡, 王煜蓉, 杨雷, 潘海峰, 刘巧莉, 郭霞, 汤凯, 张忠萍, 吴光 2020 物理学报 69 074204 Google Scholar Zhang H Y, Wang L L, Wu C Y, Wang Y R, Yang L, Pang H F, Liu Q L, Guo X, Tang K, Zhang Z P, Wu G 2020 Acta Phys. Sin. 69 074204 Google Scholar
[20]	Nishida K, Taguchi K, Matsumoto Y 1979 Appl. Phys. Lett. 35 251 Google Scholar
[21]	Deng Q, Wang Z, Wang S, Shao G D 2017 Sol. Energy 158 654 Google Scholar
[22]	Sekino K, Midonoya M, Udono H, Yamada Y Udono H 2011 Phys. Procedia 11 171 Google Scholar
[23]	Martin A G 2008 Sol. Energy Mater. Sol. Cells 92 1305 Google Scholar
[24]	Park C Y, Hyun K, Kang S G, Kim H M 1995 Appl. Phys. Lett. 67 3789 Google Scholar
[25]	Smetona S, Matukas J, Palenskis V, Olechnovicius M, A. Kaminskas K, Mallard R 2004 Proceedings of SPIE-Photonics North 2004: Optical Components and Devices Ottawa, Canada, September 26–29, 2004 p834
[26]	谢天, 叶新辉, 夏辉, 李菊柱, 张帅君, 姜新洋, 邓伟杰, 王文静, 李玉莹, 刘伟伟, 李翔, 李天信 2020 红外与毫米波学报 39 0583 Google Scholar Xie T, Ye X H, Xia H, Li J Z, Zhang S J, Jiang X Y, Deng W J, Wang W J, Li Y Y, Liu W W, Li X, Li T X 2020 J. Infrared Millim. W. 39 0583 Google Scholar
[27]	Yuan H, Zhang J, Kim J, Meyer C, Laquindanum J, Kimchi J, Lei J 2018 Proceedings of SPIE -Infrared Sensors, Devices, and Applications VIII San Diego, United States, August 22–23, 2018 p107660 J-1
[28]	Wang Y D, Chen J, Xu J D, Li X Y 2018 Infrared Phys. Technol. 89 41 Google Scholar
[29]	施敏, 伍国珏著 (耿莉, 张瑞智译) 2008 半导体器件物理 (第3版) (西安: 西安交通大学出版社) 第514−523页 Sze S M, K. Ng K (translated by Geng L, Wu G J) 2008 Physics of Semiconductor Devices (3rd Ed.) (Xi’an: Xi’an Jiaotong University Press) pp514−523 (in Chinese)
[30]	Lee M J, Rucker H, Choi W Y 2012 IEEE Electron Device Lett. 33 80 Google Scholar

Cited By

图 1 SACM-APD结构示意图

Figure 1. Schematic diagram of SACM-APD.

DownLoad: Full-Size Img PowerPoint

图 2 APD的能带结构图

Figure 2. Energy band structure diagram of the APD.

DownLoad: Full-Size Img PowerPoint

图 3 Mg₂Si与c-Si的光学特性　(a) Mg₂Si与c-Si的吸收系数(cm^–1)与入射能量的关系; (b) Mg₂Si与c-Si的折射率与波长的关系

Figure 3. Optical properties of Mg₂Si and c-Si: (a) Absorption coefficient(cm^–1) of the poly-Mg₂Si and c-Si; (b) refractive Index of the poly-Mg₂Si and c-Si.

DownLoad: Full-Size Img PowerPoint

图 4 (a) 电荷层厚度为0.1 µm时器件的电场分布; (b) 电荷层厚度为0.2 µm时器件的电场分布

Figure 4. (a) Electric field distribution of the device with charge layer thickness of 0.1 µm; (b) electric field distribution of the device with charge layer thickness of 0.2 µm.

DownLoad: Full-Size Img PowerPoint

图 5 Mg₂Si/Si SACM-APD器件在不同偏压下内部的载流子生成率

Figure 5. The influence of the different Bias voltage on the carrier generation rate.

DownLoad: Full-Size Img PowerPoint

图 6 倍增层不同掺杂浓度时倍增层的电场分布

Figure 6. Electric field distribution of the multiplier layer under different doping concentrations.

DownLoad: Full-Size Img PowerPoint

图 7 电荷层厚度、掺杂浓度与击穿电压和穿通电压之间的关系

Figure 7. The relation between the thickness and doping concentration of charge layer and the breakdown voltage, the punch-through voltage.

DownLoad: Full-Size Img PowerPoint

图 8 不同倍增层厚度时的击穿电压与穿通电压

Figure 8. Breakdown voltage and penetration voltage at different thicknesses of the multiplier layer.

DownLoad: Full-Size Img PowerPoint

图 9 倍增层不同掺杂浓度与穿通电压和击穿电压关系

Figure 9. Breakdown voltage and penetration voltage at different doping concentration of the multiplier layer.

DownLoad: Full-Size Img PowerPoint

图 10 APD的I-V特性与增益系数

Figure 10. I-V characteristics and gain coefficient of APD.

DownLoad: Full-Size Img PowerPoint

图 11 不同的偏置电压对APD光谱响应的影响

Figure 11. Effect of different bias voltages on the spectral response of APD.

DownLoad: Full-Size Img PowerPoint

图 12 倍增层厚度对器件电容的影响

Figure 12. The influence of the thickness of multiplication layer on the capacitance of the device.

DownLoad: Full-Size Img PowerPoint

图 13 不同倍增层厚度时器件的瞬态响应

Figure 13. Transient response of the device for different thickness of the multiplication layer.

DownLoad: Full-Size Img PowerPoint

表 1 APD的结构参数

Table 1. Structural parameters of the APD.

层名	符号	厚度/μm	符号	浓度掺杂/ × 10¹⁶ cm^–3
金属电极层	—	0.1	—	0
Mg₂Si接触层	W_p	0.15	N_p	500
Mg₂Si吸收层	W_a	0.6—4	N_a	0.1
Si电荷层	W_c	0.1—0.3	N_c	6—14
Si倍增层	W_m	1	N_m	0.01—1
Si缓冲层	W_b	0.5	N_b	100
Si衬底	W_s	3.5	N_s	1000

DownLoad: CSV

表 2 模拟计算中采用的各层基本参数

Table 2. The parameters of different layers in the simulation.

参数	Mg₂Si	c-Si^[21]
相对介电常数	20^[21]	11.9
电子迁移率/(cm²·V^–1·S^–1)	550^[21]	1350
空穴迁移率/(cm²·V^–1·S^–1)	70^[15]	500
材料带隙/eV	0.77^[9,21]	1.12
导带有效态密度/cm^–3	7.8 × 10¹⁸	2.8 × 10¹⁹
价带有效态密度/cm^–3	2.06 × 10¹⁹	1.04 × 10¹⁹
电子亲和力/eV	4.37^[21,22]	4.05

DownLoad: CSV

表 3 模拟结果与目前国际水平对比

Table 3. Comparison of simulation results with current international level.

材料	暗电流密度/(A·cm^–2)	光谱响应/(A·W^–1)
InGaAs	5 × 10^–4^[26]	1.2^[26]
InGaAs/InP	7 × 10^–10^[26]	—
HgCdTe/CdTe/Si	0.007^[26]	—
HgCdTe/CdZnTe	2.7 × 10^–5^[27]	1.45^[27]
Mg₂Si	0.04^[14,16]	0.014^[14,16]
Mg₂Si/Si-pn	6 × 10^–7^[17]	0.32^[17]
Mg₂Si/Si-pin	1 × 10^–6^[17]	0.742^[17]
Mg₂Si/Si-SACM	3.6 × 10^–5	25

DownLoad: CSV

[1]	莫秋燕, 赵彦立 2011 物理学报 60 072902 Google Scholar Mo Q Y, Zhao Y L 2011 Acta Phys. Sin. 60 072902 Google Scholar
[2]	Park S M, Grein C H 2019 J. Electron. Mater. 48 8163 Google Scholar
[3]	Rogalski A 2005 Rep. Prog. Phys. 68 2267 Google Scholar
[4]	Xu S J, Chua S J, Mei T, Wang X C, Zhang X H, Karunasiri G, Fan W J, Wang C H, Jiang J, Wang S, Xie X G 1998 Appl. Phys. Lett. 73 3153 Google Scholar
[5]	Rogalski A 2002 Infrared. Phys. Technol. 43 187 Google Scholar
[6]	Rogalski A 2011 Infrared. Phys. Technol. 54 136 Google Scholar
[7]	胡伟达, 李庆, 陈效双, 陆卫 2019 物理学报 68 120701 Google Scholar Hu W D, Li Q, Chen X S, Lu W 2019 Acta Phys. Sin. 68 120701 Google Scholar
[8]	LaBotz R 1963 J. Electrochem. Soc. 110 127 Google Scholar
[9]	Kato T, Sago Y, Fujiwara H 2011 J. Appl. Phys. 110 063723 Google Scholar
[10]	Borisenko V E 2000 Semiconducting Silicides (New York: Springer) pp137−179
[11]	Au-Yang M Y, Cohen M L 1969 Phys. Rev. 178 1358 Google Scholar
[12]	Liao Y F, Fan M H, Xie Q, Xiao Q Q, Xie J, Yu H, Wang S L, Ma X Y 2018 Appl. Surf. Sci. 403 302 Google Scholar
[13]	Janega P L, McCaffrey J, Landheer D, Buchanan M, Denhoff M, Mitchel D 1988 Appl. Phys. Lett. 53 2056 Google Scholar
[14]	Udono H, Tajima H, Uchikoshi M, Itakura M 2015 Jpn. J. Appl. Phys. 54 07JB06 Google Scholar
[15]	Udono H, Yamanaka Y, Uchikoshi M, Isshiki M 2013 J. Phys. Chem. Solids. 74 311 Google Scholar
[16]	El-Amir A A M, Ohsawa T, Nabatame T, Ohia A, Wadaa Y, Nakamuraa M, Fua K, Shimamuraa K, Ohashia N 2019 Mater. Sci. Semicond. Process. 91 222 Google Scholar
[17]	陈豪, 肖清泉, 谢泉, 王坤, 史娇娜 2019 材料导报 33 3358 Google Scholar Chen H, Xiao Q Q, Xie Q, Wang K, Shi J N, 2019 Mater. Rep. 33 3358 Google Scholar
[18]	Forrest S R, Kim O K, Smith R G 1982 Appl. Phys. Lett. 41 95 Google Scholar
[19]	张海燕, 汪琳莉, 吴琛怡, 王煜蓉, 杨雷, 潘海峰, 刘巧莉, 郭霞, 汤凯, 张忠萍, 吴光 2020 物理学报 69 074204 Google Scholar Zhang H Y, Wang L L, Wu C Y, Wang Y R, Yang L, Pang H F, Liu Q L, Guo X, Tang K, Zhang Z P, Wu G 2020 Acta Phys. Sin. 69 074204 Google Scholar
[20]	Nishida K, Taguchi K, Matsumoto Y 1979 Appl. Phys. Lett. 35 251 Google Scholar
[21]	Deng Q, Wang Z, Wang S, Shao G D 2017 Sol. Energy 158 654 Google Scholar
[22]	Sekino K, Midonoya M, Udono H, Yamada Y Udono H 2011 Phys. Procedia 11 171 Google Scholar
[23]	Martin A G 2008 Sol. Energy Mater. Sol. Cells 92 1305 Google Scholar
[24]	Park C Y, Hyun K, Kang S G, Kim H M 1995 Appl. Phys. Lett. 67 3789 Google Scholar
[25]	Smetona S, Matukas J, Palenskis V, Olechnovicius M, A. Kaminskas K, Mallard R 2004 Proceedings of SPIE-Photonics North 2004: Optical Components and Devices Ottawa, Canada, September 26–29, 2004 p834
[26]	谢天, 叶新辉, 夏辉, 李菊柱, 张帅君, 姜新洋, 邓伟杰, 王文静, 李玉莹, 刘伟伟, 李翔, 李天信 2020 红外与毫米波学报 39 0583 Google Scholar Xie T, Ye X H, Xia H, Li J Z, Zhang S J, Jiang X Y, Deng W J, Wang W J, Li Y Y, Liu W W, Li X, Li T X 2020 J. Infrared Millim. W. 39 0583 Google Scholar
[27]	Yuan H, Zhang J, Kim J, Meyer C, Laquindanum J, Kimchi J, Lei J 2018 Proceedings of SPIE -Infrared Sensors, Devices, and Applications VIII San Diego, United States, August 22–23, 2018 p107660 J-1
[28]	Wang Y D, Chen J, Xu J D, Li X Y 2018 Infrared Phys. Technol. 89 41 Google Scholar
[29]	施敏, 伍国珏著 (耿莉, 张瑞智译) 2008 半导体器件物理 (第3版) (西安: 西安交通大学出版社) 第514−523页 Sze S M, K. Ng K (translated by Geng L, Wu G J) 2008 Physics of Semiconductor Devices (3rd Ed.) (Xi’an: Xi’an Jiaotong University Press) pp514−523 (in Chinese)
[30]	Lee M J, Rucker H, Choi W Y 2012 IEEE Electron Device Lett. 33 80 Google Scholar

[1]	Wang Dong-Zhi, Zhang Yi-Jun, Li Shi-Man, Tong Ze-Hao, Tang Song, Shi Feng, Jiao Gang-Cheng, Cheng Hong-Chang, Fu Rong-Guo, Qian Yun-Sheng, Zeng Yu-Gang. AlGaAs photocathode with enhanced response at 532 nm. Acta Physica Sinica, 2024, 73(11): 118503. doi: 10.7498/aps.73.20240253
[2]	Fu Zheng-Hong, Li Ting, Shan Mei-Le, Guo Kang, Gou Guo-Qing. Effect of H on elastic properties of Mg₂Si by the first principles calculation. Acta Physica Sinica, 2019, 68(17): 177102. doi: 10.7498/aps.68.20190368
[3]	Guo Yin, Shu Bi-Fen, Wang Jing, Yang Qing-Chuan, Jiang Jing-Xiang, Huang Yan, Zhou Zheng-Long. Concentrating characteristics of Fresnel lens with prism secondary concentrator and optimization of high concentrating photovoltaic module with triple-junction cell. Acta Physica Sinica, 2018, 67(10): 108801. doi: 10.7498/aps.67.20172778
[4]	Liu Tao, Zhao Yong-Peng, Ding Yu-Jie, Li Xiao-Qiang, Cui Huai-Yu, Jiang Shan. Characteristics of gain in Ne-like Ar 69.8 nm laser pumped by capillary discharge. Acta Physica Sinica, 2017, 66(15): 155201. doi: 10.7498/aps.66.155201
[5]	Zhu Yan, Zhang Xin-Yu, Zhang Su-Hong, Ma Ming-Zhen, Liu Ri-Ping, Tian Hong-Yan. Electron transport properties of Mg2Si under hydrostatic pressures. Acta Physica Sinica, 2015, 64(7): 077103. doi: 10.7498/aps.64.077103
[6]	Chai Xiang-Xu, Li Fu-Quan, Wang Sheng-Lai, Feng Bin, Zhu Qi-Hua, Liu Bao-An, Sun Xun, Xu Xin-Guang. Influence of deuteration degree on the transverse stimulated Raman scattering gain coefficient of DKDP crystal. Acta Physica Sinica, 2015, 64(3): 034213. doi: 10.7498/aps.64.034213
[7]	Zhang Yi-Jun, Gan Zhuo-Xin, Zhang Han, Huang Fan, Xu Yuan, Feng Cheng. Recesiation of GaAlAs photocathodes in an ultrahigh vacuum system. Acta Physica Sinica, 2014, 63(17): 178502. doi: 10.7498/aps.63.178502
[8]	Chen Wei, Chen Xue-Gang, Shi Jiu-Lin, He Xing-Dao, Mo Xiao-Feng, Liu Juan. Measurement of gain coefficients of stimulated Brillouin scattering in water at different temperatures. Acta Physica Sinica, 2013, 62(10): 104213. doi: 10.7498/aps.62.104213
[9]	Qiao Jian-Liang, Chang Ben-Kang, Qian Yun-Sheng, Gao Pin, Wang Xiao-Hui, Xu Yuan. Comprehensive Survey for the Frontier Disciplines. Acta Physica Sinica, 2011, 60(10): 107901. doi: 10.7498/aps.60.107901
[10]	Mo Qiu-Yan, Zhao Yan-Li. Frequency responses of communication avalanche photodiodes. Acta Physica Sinica, 2011, 60(7): 072902. doi: 10.7498/aps.60.072902
[11]	Peng Hua, Wang Chun-Lei, Li Ji-Chao, Wang Hong-Chao, Wang Mei-Xiao. Theoretical investigation of the electronic structure and thermoelectric transport property of Mg2Si. Acta Physica Sinica, 2010, 59(6): 4123-4129. doi: 10.7498/aps.59.4123
[12]	Liu Wen-Bao, Zhao De-Gang, Jiang De-Sheng, Liu Zong-Shun, Zhu Jian-Jun, Zhang Shu-Ming, Yang Hui. Abnormal photoabsorption in high resistance GaN epilayer. Acta Physica Sinica, 2010, 59(11): 8048-8051. doi: 10.7498/aps.59.8048
[13]	Qiao Jian-Liang, Chang Ben-Kang, Qian Yun-Sheng, Du Xiao-Qing, Zhang Yi-Jun, Gao Pin, Wang Xiao-Hui, Guo Xiang-Yang, Niu Jun, Gao You-Tang. Study of spectral response characteristics of negative electron affinity GaN photocathode. Acta Physica Sinica, 2010, 59(5): 3577-3582. doi: 10.7498/aps.59.3577
[14]	Yu Zhi-Qiang, Xie Quan, Xiao Qing-Quan, Zhao Ke-Jie. Structure and extinction properties of Mg2Si crystal. Acta Physica Sinica, 2009, 58(10): 6889-6893. doi: 10.7498/aps.58.6889
[15]	Hu Jian-Min, Wu Yi-Yong, Qian Yong, Yang De-Zhuang, He Shi-Yu. Damage of electron irradiation to the GaInP/GaAs/Ge triple-junction solar cell. Acta Physica Sinica, 2009, 58(7): 5051-5056. doi: 10.7498/aps.58.5051
[16]	Zhang Wei-Ying, Wu Xiao-Peng, Sun Li-Jie, Lin Bi-Xia, Fu Zhu-Xi. Study on the photovoltaic conversion of ZnO/Si heterojunction. Acta Physica Sinica, 2008, 57(7): 4471-4475. doi: 10.7498/aps.57.4471
[17]	Xu Xiang-Yan, Ye Zhen-Hua, Li Zhi-Feng, Lu Wei. Optimizing modeling of two-color middle wavelength infrared photovoltaic HgCdTe detectors. Acta Physica Sinica, 2007, 56(5): 2882-2889. doi: 10.7498/aps.56.2882
[18]	Qiao Xiu-Mei, Zhang Guo-Ping. Theoretical study of TCE Ne-like Ge 19.6nm X-ray laser. Acta Physica Sinica, 2007, 56(9): 5248-5251. doi: 10.7498/aps.56.5248
[19]	Yang Wen-Zheng, Hou Xun, Chen Feng, Yang Qing. Experimental study of enhancement of the light-modulated absorption of bacteriorhodopsin-D96N films. Acta Physica Sinica, 2004, 53(1): 296-300. doi: 10.7498/aps.53.296
[20]	Yuan Bao-Hong, Chen Zhong-Xian, Jiang Yong-Yuan, Sun Xiu-Dong, Zhou Zhong-Xiang, Yao Feng-Feng. . Acta Physica Sinica, 2002, 51(7): 1512-1516. doi: 10.7498/aps.51.1512

Catalog

Vol. 70, Issue 10 - 2021-05-20

Metrics

Abstract views: 8121
PDF Downloads: 171
Cited By: 0

姓名
邮箱
手机号码
标题
留言内容
验证码

Search

Article

留言板

Design and simulation of Mg₂Si/Si avalanche photodiode

Abstract

Authors and contacts

Corresponding author: Xiao Qing-Quan, qqxiao@gzu.edu.cn

FullText HTML : translate this paragraph

References

Cited By

Catalog

Metrics

Authors

Referees

About Journal

About

Search

Article

留言板

Design and simulation of Mg2Si/Si avalanche photodiode

Abstract

Authors and contacts

Corresponding author: Xiao Qing-Quan, qqxiao@gzu.edu.cn

FullText HTML : translate this paragraph

References

Cited By

Catalog

Metrics

Publishing process

Authors

Referees

About Journal

About

Design and simulation of Mg₂Si/Si avalanche photodiode