Combinatorial film and high-throughput characterization methods of phase diagram for high-<i>T</i><sub>c</sub> superconductors

Jin Kui; Wu Jie

doi:10.7498/aps.70.20202102

Abstract

Cuprate and iron-based superconductors are known as the only two types of high-T_c superconductors. The mechanism of high-T_c superconductivity is the most challenging issue in the field. Building accurate high-dimensional phase diagram and exploring key parameters that determine T_c, would be essential to the comprehension of high-T_c mechanism. The electronic phase diagrams of cuprate superconductors show complexity and diversity, for the strong coupling and interplay among lattice, orbital, charge and spin degrees of freedom. It is tough to construct a high-dimensional holographic phase diagram and obtain quantitative laws by traditional research methods. Fortunately, the high-throughput synthesis and fast screening techniques enable to probe the phase diagram via line-by-line or map scanning modes, and thereby are expected to obtain high-dimensional phase diagram and key superconducting parameters in a much efficient way. In this article, electronic phase diagrams of cuprate superconductors that are obtained mainly by electrical transport measurements, are briefly summarized in the view of cation substitutions, oxygen variation in the parent compounds, electric double-layer gating (electrostatic/electrochemical manipulation) and magnetic field. We introduce the preparation methods for combinatorial film based on the developed pulsed laser deposition and oxide molecular beam epitaxy techniques, as well as corresponding scale-span high-throughput measurement techniques. These high-throughput techniques have been successfully applied in the research of interface superconductivity, quantum phase transition, and so on. The novel high-throughput superconductivity research mode will play an indispensable role in the construction of the high-dimensional holographic phase diagram, the comprehension of high-T_c mechanism, and practical applications of superconductors.

Keywords:

Authors and contacts

Jin Kui^1,2,3,
Wu Jie^4,5

1.
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
2.
School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
3.
Songshan Lake Materials Laboratory, Dongguan 523808, China
4.
Key Laboratory for Quantum Materials of Zhejiang Province, School of Science, Westlake University, Hangzhou 310024, China
5.
Institute of Natural Sciences, Westlake Institute for Advanced Study, Hangzhou 310024, China

Corresponding author: Jin Kui, kuijin@iphy.ac.cn ; Wu Jie, wujie@westlake.edu.cn

Funds: Project supported by the National Basic Research Program of China (Grant Nos. 2016YFA0300301, 2017YFA0302902, 2017YFA0303003, 2018YFB0704102), the National Natural Science Foundation of China (Grant Nos. 11674374, 11834016), the Strategic Priority Research Program of Chinese Academy of Sciences, China (Grant No. XDB25000000), the Key Research Program of Frontier Sciences, Chinese Academy of Sciences, China (Grant Nos. QYZDJ-SSW-SLH001, QYZDB-SSW-SLH008, QYZDY-SSW-SLH001), the Natural Science Foundation of Beijing, China (Grant No. Z190008), and Interdisciplinary Innovation Team of Chinese Academy of Sciences, China

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图 1 铜氧化物的晶体结构示意图, RE代表稀土元素原子　(a) “214”型空穴型铜氧化物的晶体结构; (b) “214”电子型铜氧化物的晶体结构; (c) YBa₂Cu₃O₇超导体的晶体结构

Figure 1. An illustration of the crystal structure of cuprate superconductors, in which RE denotes rare earth atoms: (a) The crystal structure of hole-doped cuprates; (b) the crystal structure of electron-doped cuprates; (c) the crystal structure of YBa₂Cu₃O₇.

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图 2 空穴型铜氧化物La_2–_xSr_xCuO₄和电子型铜氧化物RE_2–_xCe_xCuO₄的系统电子态相图. 其中SC, AFM, FM分别代表超导相、反铁磁序和铁磁序, 绿色虚线代表费米液体区域的边界. 在左半部分相图中, T^*代表赝能隙打开的温度, 但其消失的位置仍有争议. 另外, 欠掺杂区域存在电荷和自旋的局域态, 图中未标出. 在右半部分相图中, 反铁磁序(两条蓝色线分别代表电输运中面内磁电阻各向异性出现的温度和upturn电阻出现的温度)消失于一个与费米面重构相关的量子临界点x_FS, 超导相与铁磁序之间存在另一个量子临界点x_c, 红色虚线代表奇异金属区域的边界

Figure 2. A systemic illustration of the phase diagram of hole- and electron-doped cuprates, in which SC, AFM, FM denote superconducting phase, antiferromagnetic order and ferromagnetic order, respectively, and green dashed line denotes the boundary of Fermi liquid regime. In the left part of the phase diagram, T^* denotes the onset temperature of pseudogap, yet the disappearing temperature is still under debate. Charge and spin localized states exist in the underdoped region (not shown in this figure). In the right part of the phase diagram, antiferromagnetic order, diminishes in a quantum critical point x_FS related to the reconstruction of Fermi surface, and the second quantum critical point x_c is located at the edges of superconducting phase and ferromagnetic order. Two blue dashed lines associated with AF order are determined from anisotropic in-plane magnetoresistivity (higher) and the upturn of resistivity (lower), respectively. Red dashed line denotes the boundary of strange metal area.

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图 3 PCO与PCCO中T_c与R_H的依赖关系^[43]

Figure 3. T_c versus R_H for both PCO and PCCO^[43].

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图 4 通过退火和离子液体调控两种方法获得Pr₂CuO_{4 ±}_δ薄膜的超导电性相图^[64]. 蓝色区域是T_c与c轴晶格常数的依赖关系, 黄色区域(SC I和SC II)是T_c与门电压的依赖关系

Figure 4. Phase diagrams of Pr₂CuO_{4 ±}_δ on the basis of annealing and gating processes^[64]. Side view: the superconducting dome as a function of the c-axis lattice constant; Elevation view: the superconducting dome as a function of gate voltage (SC I and SC II represent two domes in positive and negative voltages, respectively).

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图 5 La_2–_xCe_xCuO_{4 ±}_δ(x = 0.10)体系电子态随磁场演化相图

Figure 5. The magnetic field dependence of electronic phase diagram of La_2–_xCe_xCuO_{4 ±}_δ (x = 0.10).

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图 6 连续移动掩模板技术生长二元组合薄膜示意图^[79]

Figure 6. An illustration of a typical procedure of binary combi-film growth by using moving mask technique^[79].

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图 7 基于分子束外延技术的组合薄膜生长技术示意图　(a) 蒸发源出来的分子束在空间的分布; (b) 石英振荡器所定标的沉积速率的空间分布

Figure 7. An illustration of combinatorial molecular beam epitaxy (COMBE): (a) The sketch of the distribution of atomic beam evaporated from the source; (b) the spatial distribution of the deposition rate calibrated by the quartz oscillator.

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图 8 Fe-B二元成分组合薄膜的不同位置的电阻-温度依赖关系; (b) 64弹性探针阵列多通道电阻测量装置实物照片; (c) 左图中放大区域的交流磁化率测试结果^[85]

Figure 8. (a) Mapping of the temperature dependence of resistivity on the Fe-B composition spread film; (b) a 64-pogo-pin-array probe; (c) diamagnetic signal measured by AC susceptibility on the same chip where resistive drop was observed^[85].

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图 9 适用于组合薄膜输运性质测试的光刻图案

Figure 9. The lithography pattern for the COMBE samples.

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图 10 LCCO组合薄膜的输运测试结果　(a) 第一次光刻采用的光刻图样; (b) 第一次光刻结束后各个桥路的R-T曲线, 超导转变温度随着掺杂的增加而逐渐降低, 到接近x = 0.19的一端超导电性消失; (c) 第二次光刻采用的光刻图样; (d) 第二次光刻结束后各个通道的R-T曲线; (e) 第三次光刻采用的光刻图样, 此时名义成分分辨率为0.0002; (f) 第三次光刻结束后各个桥路的R-T曲线

Figure 10. The results of electrical transport measurements for LCCO combinatorial film: (a) The pattern in the first step lithography; (b) the R-T curves of different channels in the first step lithography. The T_c decreases with increasing Ce doping; (c) the pattern in the second step lithography; (d) the R-T curves of different channels in the second step lithography; (e) the pattern in the third step lithography, where the nominal resolution of composition is 0.0002; (f) the R-T curves of different channels in the third step lithography.

DownLoad: Full-Size Img PowerPoint

图 11 (a) 组合激光分子束外延-扫描隧道显微镜联合系统; 内插: 旋转掩膜制备组合薄膜示意图; (b) 此设备生长出的梯度厚度FeSe薄膜R-T曲线; (c) 梯度厚度FeSe薄膜样品T_c0与厚度的依赖关系; (d) 该设备生长的FeSe薄膜原位原子分辨图

Figure 11. (a) The photograph of the combinatorial laser molecular beam epitaxy system integrated with low temperature scanning tunneling microscopy. Inset: Schematic diagram of the combinatorial film deposition stages; (b) temperature dependence of the resistance of the FeSe film with gradient thickness; (c) thickness dependence of T_c0 for a gradient thickness film; (d) atomic image of FeSe film fabricated in the system.

DownLoad: Full-Size Img PowerPoint

图 12 在La_2–_xSr_xCuO₄/La₂CuO₄双层膜中, 界面超导转变温度T^O对于掺杂浓度x的依赖关系

Figure 12. In the bilayer of La_2–_xSr_xCuO₄/La₂CuO₄, the superconducting temperature T^O, which is the onset temperature of T_c, as a function of the doping level x.

DownLoad: Full-Size Img PowerPoint

图 13 在掺杂浓度范围为0.0588 < x < 0.0612的LSCO组合薄膜上测量到的电阻率随温度和掺杂浓度的变化关系

Figure 13. The resistivity as a function of temperature and as a function of chemical doping for x in the range of 0.0588 < x < 0.0612.

DownLoad: Full-Size Img PowerPoint

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Combinatorial film and high-throughput characterization methods of phase diagram for high-T_c superconductors

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Corresponding author: Jin Kui, kuijin@iphy.ac.cn ; Wu Jie, wujie@westlake.edu.cn

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Combinatorial film and high-throughput characterization methods of phase diagram for high-Tc superconductors

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Corresponding author: Jin Kui, kuijin@iphy.ac.cn ; Wu Jie, wujie@westlake.edu.cn

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Combinatorial film and high-throughput characterization methods of phase diagram for high-T_c superconductors