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In this paper, the 795-nm vertical cavity surface emitting laser (VCSEL) with sub-wavelength grating coupled cavity is proposed and designed based on the theory of resonant coupled cavity, and the mechanism of multi-cavity coupling linewidth narrowing and influencing factors are analyzed in detail by using the COMSOL software finite element method. The analysis results show that when photonic resonance takes place in a multi-coupled cavity, the grating-coupled cavity with reasonable design parameters and the multi-coupled cavity formed by precisely controlled lasers are phase-matched, which greatly strengthens the narrowing effect of the spectral linewidth resonance, and a 795-nm VCSEL laser with high beam quality and ultra-narrow linewidth output is obtained, finally. Theoretical results display that the reflection spectrum cold cavity linewidth Δλc of the coupling cavity with a thickness of 180nm of the spacer layer can reach 7 pm, which lays a theoretical foundation for achieving a kHz-level spectral linewidth output of VCSEL lasers.
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Keywords:
- resonant coupled cavity /
- vertical cavity surface emitting laser /
- ultra-narrow linewidth /
- subwavelength grating
[1] Boletti A, Boffi P, Martelli P, Ferrario M, Martinelli M 2015 Opt. Express 23 1806Google Scholar
[2] Ghiasi A 2015 Opt. Express 23 2085Google Scholar
[3] Nakahama M, Sakaguchi T, Matsutani A, Koyama F 2014 Appl. Phys. Lett. 105 091110Google Scholar
[4] Liu A J, Wolf P, Lott J A, Bimberg D 2019 Photonics Res. 7 121Google Scholar
[5] Li M J, Li K M, Chen X, Snigdharaj K M, Adrian A J, Jason E H, Jeffery S S 2021 J. Lightwave Technol. 39 868Google Scholar
[6] Chen B, Claus D, Russ D, Nizami R 2020 Opt. Lett. 45 5583Google Scholar
[7] Schwindt P D, Lindseth B J, Shah V, Knappe S, Kitching J 2008 Conference on Lasers and Electro-Optics San Jose, United States of America, May 4−9, 2008 p1
[8] Serkland D K, Geib K M, Peake G M, Lutwak R, Rashed A, Varghese M, Tepolt G, Prouty M Vertical-cavity Surface-emitting Lasers XI San Jose, February 12–13, 2007 p648406
[9] Khan N A, Mahmood T 2020 J. Mod. Optic. 67 1334Google Scholar
[10] Paul S, Haidar M T, Cesar J, Malekizandi M, Kögel B, Neumeyr C, Ortsiefer M, Küppers F 2016 Opt. Express 24 13142Google Scholar
[11] Jiang L D, Shi L L, Luo J, Gao Q R, Lan T Y, Huang L G, Zhu T 2021 Opt. Lett. 46 2320Google Scholar
[12] Schawlow A L, Townes C H 1940 Phys Rev. 112 1940Google Scholar
[13] Henry C H 2015 IEEE J. Quantum. Elect. 18 259
[14] Moller B, Zeeb E, Fiedler U, Hackbarth T, Ebeling K 1994 IEEE Photonic Tech. L. 6 921Google Scholar
[15] Serkland D K, Keeler G A, Geib K M, Peake G M 2009 Proc. Spie. 7229 8Google Scholar
[16] Ouvrard A, Garnache A, Cerutti L, Genty F, Romanini D 2005 IEEE Photonic Tech. L. 17 2020Google Scholar
[17] Mizunami T, Kojima S, Kudo T 2006 The International Society for Optical Engineering Gwangju, Korea, September 5, 2006 p6351
[18] Hessel A, Oliner A A 1965 Appl. Opt. 4 1275Google Scholar
[19] Ura S, Kintaka K, Inoue J, Ogura T, Awatsuji Y Electronic Components and Technology Conference IEEE Las Vegas, United States of America, May 28−31, 2013 p1874
[20] Aspelmeyer M, Kippenberg T J, Marquardt F 2014 Florian. Rev. Mod. 86 1391Google Scholar
[21] Theisen M J, Brown T G 2015 J. Mod. Optic. 62 244Google Scholar
[22] Vartiainen I, Tervo J, Kuittinen M 2009 Opt. Lett. 34 1648Google Scholar
[23] Inoue J, Ogura T, Kondo T, Kintaka K, Nishio K, Awatsuji Y 2014 Opt. Lett. 39 1893Google Scholar
[24] Haglund Erik, Jahed Mehdi, Gustaysson Johan S, Larsson A, O'Brien P 2019 Opt. Lett. 27 18892Google Scholar
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图 3 (a), (b)两个谐振腔相互耦合的变化过程, 限制层厚度与光栅周期调节使其相互耦合; (c), (d)相互耦合完成之后, 不同间隔层厚度亚波长光栅VCSEL有源区与光栅耦合腔的谐振电场分布
Figure 3. (a) and (b) The variation process of the mutual coupling of the two resonant cavities, limiting the layer thickness and adjusting the grating period to make them coupled; (c) and (d) after the mutual coupling is completed, the subwavelength grating VCSEL with different spacing layer thickness is active Resonant electric field distribution of coupling cavity between zone and grating
图 4 间隔层厚度不同时, 基于导模共振耦合腔的VCSEL的冷腔反射谱的半高全宽与光场分布图 (a) db=60 nm; (b) db=120 nm; (c) db=150 nm; (d) db=180 nm
Figure 4. Full width at half maximum and optical field distribution of cold cavity reflection spectrum of VCSEL based on guided mode resonant coupled cavity when the thickness of the spacer layer is different: (a) db=60 nm; (b) db=120 nm; (c) db=150 nm; (d) db=180 nm.
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[1] Boletti A, Boffi P, Martelli P, Ferrario M, Martinelli M 2015 Opt. Express 23 1806Google Scholar
[2] Ghiasi A 2015 Opt. Express 23 2085Google Scholar
[3] Nakahama M, Sakaguchi T, Matsutani A, Koyama F 2014 Appl. Phys. Lett. 105 091110Google Scholar
[4] Liu A J, Wolf P, Lott J A, Bimberg D 2019 Photonics Res. 7 121Google Scholar
[5] Li M J, Li K M, Chen X, Snigdharaj K M, Adrian A J, Jason E H, Jeffery S S 2021 J. Lightwave Technol. 39 868Google Scholar
[6] Chen B, Claus D, Russ D, Nizami R 2020 Opt. Lett. 45 5583Google Scholar
[7] Schwindt P D, Lindseth B J, Shah V, Knappe S, Kitching J 2008 Conference on Lasers and Electro-Optics San Jose, United States of America, May 4−9, 2008 p1
[8] Serkland D K, Geib K M, Peake G M, Lutwak R, Rashed A, Varghese M, Tepolt G, Prouty M Vertical-cavity Surface-emitting Lasers XI San Jose, February 12–13, 2007 p648406
[9] Khan N A, Mahmood T 2020 J. Mod. Optic. 67 1334Google Scholar
[10] Paul S, Haidar M T, Cesar J, Malekizandi M, Kögel B, Neumeyr C, Ortsiefer M, Küppers F 2016 Opt. Express 24 13142Google Scholar
[11] Jiang L D, Shi L L, Luo J, Gao Q R, Lan T Y, Huang L G, Zhu T 2021 Opt. Lett. 46 2320Google Scholar
[12] Schawlow A L, Townes C H 1940 Phys Rev. 112 1940Google Scholar
[13] Henry C H 2015 IEEE J. Quantum. Elect. 18 259
[14] Moller B, Zeeb E, Fiedler U, Hackbarth T, Ebeling K 1994 IEEE Photonic Tech. L. 6 921Google Scholar
[15] Serkland D K, Keeler G A, Geib K M, Peake G M 2009 Proc. Spie. 7229 8Google Scholar
[16] Ouvrard A, Garnache A, Cerutti L, Genty F, Romanini D 2005 IEEE Photonic Tech. L. 17 2020Google Scholar
[17] Mizunami T, Kojima S, Kudo T 2006 The International Society for Optical Engineering Gwangju, Korea, September 5, 2006 p6351
[18] Hessel A, Oliner A A 1965 Appl. Opt. 4 1275Google Scholar
[19] Ura S, Kintaka K, Inoue J, Ogura T, Awatsuji Y Electronic Components and Technology Conference IEEE Las Vegas, United States of America, May 28−31, 2013 p1874
[20] Aspelmeyer M, Kippenberg T J, Marquardt F 2014 Florian. Rev. Mod. 86 1391Google Scholar
[21] Theisen M J, Brown T G 2015 J. Mod. Optic. 62 244Google Scholar
[22] Vartiainen I, Tervo J, Kuittinen M 2009 Opt. Lett. 34 1648Google Scholar
[23] Inoue J, Ogura T, Kondo T, Kintaka K, Nishio K, Awatsuji Y 2014 Opt. Lett. 39 1893Google Scholar
[24] Haglund Erik, Jahed Mehdi, Gustaysson Johan S, Larsson A, O'Brien P 2019 Opt. Lett. 27 18892Google Scholar
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