Steady-state and transient optoelectronic characteristics of styrene-and quinoline-based derivative

Cheng Yan-Qin; Xu Juan-Juan; Wang You-Di; Li Zhuo-Xi; Chen Jiang-Shan

doi:10.7498/aps.71.20211171

Abstract

Styrene and quinoline groups are commonly incorporated into the organic fluorescent materials for organic light-emitting diodes (OLEDs). In this work, a type of small molecule derived from styrene and quinoline, with a chemical structure of 2,2'-(2,5-dimethoxy-1,4-phylenedivinylene)bis-8- acetoxyquinoline (MPV-AQ), is employed as the emitter and electron transporting material in the OLEDs, and its optoelectronic characteristics such as charge-carrier injection, transporting and recombination are investigated by the steady-state and transient technologies. It is found that the electron injection from the cathode into the MPV-AQ layer shows the Fowler-Nordheim (FN) tunneling characteristic in the N,N'-di(naphthalene-1-yl)-N,N'-diphenyl-benzidine (NPB)/MPV-AQ bilayer OLED, which is different from the Richardson-Schottky (RS) thermionic emission in the electron-only device based on the MPV-AQ single-layer. The difference in electron injection is attributed to the bend of energy bands of MPV-AQ in the NPB/MPV-AQ device, which can be caused by the charge accumulation at the NPB/MPV-AQ interface. The accumulated charges should mainly be the holes on the side of NPB layer because the electron mobility of MPV-AQ is much lower than the hole mobility of NPB. Owing to the bending of lowest unoccupied molecular orbital (LUMO) of MPV-AQ, the tunneling distance for electrons is significantly reduced, which is favorable for the FN tunneling. The barrier height for electron injection is calculated to be 0.23 eV by fitting the current-voltage curve of the NPB/MPV-AQ bilayer OLED. And the electron mobility of MPV-AQ is determined by the delay time of transient electroluminescence (EL) and shows field-dependence with the value on the order of 10^–6 cm²/(V·s). In addition, the electron-hole recombination coefficient is obtained from the long time component of the temporal decay of the EL intensity, and the coefficient is found to decrease with the applied voltage increasing, which is consistent with the efficiency roll-off in this bilayer OLED. This study may provide a foundation for understanding the electronic processes of carrier injection, transport and recombination in the OLEDs, which is helpful in improving the device performance.

Keywords:

Authors and contacts

1.
College of Pharmacy, Guangzhou Xinhua College, Guangzhou 510520, China
2.
School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, China

Corresponding author: Cheng Yan-Qin, 10602511@qq.com ; Chen Jiang-Shan, msjschen@scut.edu.cn

Funds: Project supported by the Department of Education of Guangdong Province, China (Grant No. 2018KTSCX318) and the State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, China (Grant No. skllmd-2021-03)

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References

[1]	Tang C W, VanSlyke S A 1987 Appl. Phys. Lett. 51 913 Google Scholar
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Cited By

图 1 MPV-AQ和NPB的分子结构式

Figure 1. Molecular structures of MPV-AQ and NPB.

DownLoad: Full-Size Img PowerPoint

图 2 单载流子器件的电流-电压特性　(a) J-V曲线; (b) ln$J\text{-}F^{1/2}$曲线

Figure 2. Characteristics of current density and voltage in the electron-only and hole-only devices: (a) J-V curves; (b) ln$J\text{-}F^{1/2}$ curves

DownLoad: Full-Size Img PowerPoint

图 3 (a) 不同MPV-AQ厚度时双层OLED的电流-电压特性; (b) 外加电压与MPV-AQ厚度的关系; (c) NPB和MPV-AQ层中平均电场(F_h和F_e)与电流的关系; (d) 双层OLED的能级结构示意图

Figure 3. (a) Characteristics of current density and voltage in the bilayer OLEDs with different MPV-AQ thickness; (b) relationship of applied voltage and MPV-AQ thickness; (c) relationship of average electric field (F_h and F_e) and current density in the NPB and MPV-AQ layers; (d) diagram of energy levels in the bilayer OLEDs.

DownLoad: Full-Size Img PowerPoint

图 4 NPB和MPV-AQ层中电流与电场(F_h和F_e)的关系 (a), (c) lnJ-F^1/2曲线; (b), (d) lnJ-F^–1曲线

Figure 4. Relationship of current density and electric field in the NPB and MPV-AQ layers (F_h and F_e): (a), (c) lnJ-F^1/2 curves; (b), (d) lnJ-F^–1 curves.

DownLoad: Full-Size Img PowerPoint

图 5 (a) 双层OLED中瞬态EL随电压的变化, 其中NPB和MPV-AQ的厚度都等于50 nm; (b) MPV-AQ电子迁移率与电场平方根的关系

Figure 5. (a) Voltage dependence of the transient EL from the bilayer OLED with the same thickness of 50 nm for NPB and MPV-AQ; (b) electron mobility of MPV-AQ as a function of the square root of electric field.

DownLoad: Full-Size Img PowerPoint

图 6 (a) 脉冲电压15 V时(Φ_EL)^–1/2与时间的关系, 插图为对应EL的衰减曲线; (b) 不同电压下的复合系数, 插图为不同电压下OLED的外量子效率

Figure 6. (a) EL decay at the falling edge of a 15 V pulse plotted in (Φ_EL)^–1/2 vs time scale. The inset shows the corresponding EL decay curve; (b) dependence of recombination coefficient on the voltage. The insert shows the external quantum efficiencies (EQEs) at various voltages in the OLED.

DownLoad: Full-Size Img PowerPoint

[1]	Tang C W, VanSlyke S A 1987 Appl. Phys. Lett. 51 913 Google Scholar
[2]	Sun Y R, Giebink N C, Kanno H, Ma B W, Thompson M E, Forrest S R 2006 Nature 440 908 Google Scholar
[3]	Uoyama H, Goushi K, Shizu K, Nomura H, Adachi C 2012 Nature 492 234 Google Scholar
[4]	Lin T A, Chatterjee T, Tsai W L, Lee W K, Wu M J, Jiao M, Pan K C, Yi C L, Chung C L, Wong K T, Wu C C 2016 Adv. Mater. 28 6976 Google Scholar
[5]	Fung M K, Li Y Q, Liao L S 2016 Adv. Mater. 28 10381 Google Scholar
[6]	Ai X, Evans E W, Dong S Z, Gillett A J, Guo H Q, Chen Y X, Hele T J H, Friend R H, Li F 2018 Nature 563 536 Google Scholar
[7]	Wu T L, Huang M J, Lin C C, Huang P Y, Chou T Y, Chen-Cheng R W, Lin H W, Liu R S, Cheng C H 2018 Nat. Photonics 12 235 Google Scholar
[8]	Liu Y C, Li C S, Ren Z J, Yan S K, Bryce M R 2018 Nat. Rev. Mater. 3 18020 Google Scholar
[9]	Kondo Y, Yoshiura K, Kitera S, Nishi H, Oda S, Gotoh H, Sasada Y, Yanai M, Hatakeyama T 2019 Nat. Photonics 13 678 Google Scholar
[10]	Chan C Y, Tanaka M, Lee Y T, Wong Y W, Nakanotani H, Hatakeyama T, Adachi C 2021 Nat. Photonics 15 6 Google Scholar
[11]	Jeon S O, Lee K H, Kim J S, Ihn S G, Chung Y S, Kim J W, Lee H, Kim S, Choi H, Lee J Y 2021 Nat. Photonics 15 9
[12]	Xu Y W, Xu P, Hu D H, Ma Y G 2021 Chem. Soc. Rev. 50 1030 Google Scholar
[13]	Ma D, Hummelgen I A, Jing X B, Hong Z Y, Wang L X, Zhao X J, Wang F S, Karasz F E 2000 J. Appl. Phys. 87 312 Google Scholar
[14]	Baldo M A, Forrest S R 2001 Phys. Rev. B 64 085201 Google Scholar
[15]	Goushi K, Yoshida K, Sato K, Adachi C 2012 Nat. Photonics 6 253 Google Scholar
[16]	Tang X, Cui L S, Li H C, Gillett A J, Auras F, Qu Y K, Zhong C, Jones S T E, Jiang Z Q, Friend R H, Liao L S 2020 Nat. Mater. 19 1332 Google Scholar
[17]	Lee J, Jeong C, Batagoda T, Coburn C, Thompson M E, Forrest S R 2017 Nat. Commun. 8 9 Google Scholar
[18]	Ostroverkhova O 2016 Chem. Rev. 116 13279 Google Scholar
[19]	Matsumura M, Jinde Y, Akai T, Kimura T 1996 Jpn. J. Appl. Phys., Part 1 35 5735 Google Scholar
[20]	Matsumura M, Akai T, Saito M, Kimura T 1996 J. Appl. Phys. 79 264 Google Scholar
[21]	Matsumura M, Jinde Y 1998 Appl. Phys. Lett. 73 2872 Google Scholar
[22]	Koehler M, Roman L S, Inganas O, da Luz M G E 2002 J. Appl. Phys. 92 5575 Google Scholar
[23]	Crone B K, Davids P S, Campbell I H, Smith D L 2000 J. Appl. Phys. 87 1974 Google Scholar
[24]	Yang J, Shen J 2000 J. Phys. D:Appl. Phys. 33 1768 Google Scholar
[25]	Tutis E, Bussac M N, Masenelli B, Carrard M, Zuppiroli L 2001 J. Appl. Phys. 89 430 Google Scholar
[26]	Cai M, Zhang D, Xu J, Hong X, Zhao C, Song X, Qiu Y, Kaji H, Duan L 2019 ACS Appl. Mater. Interfaces 11 1096 Google Scholar
[27]	Nabha-Barnea S, Gotleyb D, Yonish A, Shikler R 2021 J. Mater. Chem. C 9 719 Google Scholar
[28]	Lee J H, Lee S, Yoo S J, Kim K H, Kim J J 2014 Adv. Funct. Mater. 24 4681 Google Scholar
[29]	Tak Y H, Pommerehne J, Vestweber H, Sander R, Bässler H, Hörhold H H 1996 Appl. Phys. Lett. 69 1291 Google Scholar
[30]	Weichsel C, Burtone L, Reineke S, Hintschich S I, Gather M C, Leo K, Lüssem B 2012 Phys. Rev. B 86 075204 Google Scholar
[31]	Liu R, Gan Z, Shinar R, Shinar J 2011 Phys. Rev. B 83 245302 Google Scholar
[32]	Barth S, Muller P, Riel H, Seidler P F, Riess W, Vestweber H, Bassler H 2001 J. Appl. Phys. 89 3711 Google Scholar
[33]	Kalinowski J, Camaioni N, Di Marco P, Fattori V, Martelli A 1998 Appl. Phys. Lett. 72 513 Google Scholar
[34]	Grüne J, Bunzmann N, Meinecke M, Dyakonov V, Sperlich A 2020 J. Phys. Chem. C 124 25667 Google Scholar
[35]	Dong Q, Mendes J, Lei L, Seyitliyev D, Zhu L, He S, Gundogdu K, So F 2020 ACS Appl. Mater. Interfaces 12 48845 Google Scholar
[36]	Yuan Q, Wang T, Wang R, Zhao J, Zhang H, Ji W 2020 Opt. Lett. 45 6370 Google Scholar
[37]	Elkhouly K, Gehlhaar R, Genoe J, Heremans P, Qiu W 2020 Adv. Opt. Mater. 8 2000941 Google Scholar
[38]	Xu M, Peng Q, Zou W, Gu L, Xu L, Cheng L, He Y, Yang M, Wang N, Huang W, Wang J 2019 Appl. Phys. Lett. 115 041102 Google Scholar
[39]	Liang F, Chen J, Cheng Y, Wang L, Ma D, Jing X, Wang F 2003 J. Mater. Chem. 13 1392 Google Scholar
[40]	Sze S M 1981 Physics of Semiconductor Devices (2nd Ed.) (New York: Wiley)

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