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Zhang Leng, Shen Yu-Hao, Tang Chao-Yang, Wu Kong-Ping, Zhang Peng-Zhan, Liu Fei, Hou Ji-Wei. Effect of uniaxial strain on Hole mobility of Sb2Se3. Acta Physica Sinica,
2024, 73(11): 117101.
doi: 10.7498/aps.73.20240175
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Zhang Leng, Zhang Peng-Zhan, Liu Fei, Li Fang-Zheng, Luo Yi, Hou Ji-Wei, Wu Kong-Ping. Carrier mobility in doped Sb2Se3 based on deformation potential theory. Acta Physica Sinica,
2024, 73(4): 047101.
doi: 10.7498/aps.73.20231406
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Zhang Lei, Chen Qi-Hang, Cao Shuo, Qian Ping. Carrier Mobility in Monolayer IrSCl and IrSI Based on First-Principles Calculations. Acta Physica Sinica,
2024, 73(21): .
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Di Lin-Jia, Dai Xian-Ying, Song Jian-Jun, Miao Dong-Ming, Zhao Tian-Long, Wu Shu-Jing, Hao Yue. Calculations of energy band structure and mobility in critical bandgap strained Ge1-xSnx based on Sn component and biaxial tensile stress modulation. Acta Physica Sinica,
2018, 67(2): 027101.
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Li Wei-Sheng, Zhou Jian, Wang Han-Chen, Wang Shu-Xian, Yu Zhi-Hao, Li Song-Lin, Shi Yi, Wang Xin-Ran. Logical integration device for two-dimensional semiconductor transition metal sulfide. Acta Physica Sinica,
2017, 66(21): 218503.
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Zhang Li-Yong, Fang Liang, Peng Xiang-Yang. First-principles study on multiphase property and phase transition of monolayer MoS2. Acta Physica Sinica,
2016, 65(12): 127101.
doi: 10.7498/aps.65.127101
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Bai Min, Xuan Rong-Xi, Song Jian-Jun, Zhang He-Ming, Hu Hui-Yong, Shu Bin. Hole scattering and mobility in compressively strained Ge/(001)Si1-xGex. Acta Physica Sinica,
2015, 64(3): 038501.
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Gao Ya-Na, Li Xi-Feng, Zhang Jian-Hua. Solution-processed high performance HIZO thin film transistor with AZO gate dielectric. Acta Physica Sinica,
2014, 63(11): 118502.
doi: 10.7498/aps.63.118502
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Tang Xin-Yue, Gao Hong, Pan Si-Ming, Sun Jian-Bo, Yao Xiu-Wei, Zhang Xi-Tian. Electrical characteristics of individual In-doped ZnO nanobelt field effect transistor. Acta Physica Sinica,
2014, 63(19): 197302.
doi: 10.7498/aps.63.197302
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Liu Rui-Lan, Wang Xu-Liang, Tang Chao. Identification for hole transporting properties of NPB based on particle swarm optimization algorithm. Acta Physica Sinica,
2014, 63(2): 028105.
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Wang Hong-Pei, Wang Guang-Long, Yu Ying, Xu Ying-Qiang, Ni Hai-Qiao, Niu Zhi-Chuan, Gao Feng-Qi. Properties of δ doped GaAs/AlxGa1-xAs 2DEG with embedded InAs quantum dots. Acta Physica Sinica,
2013, 62(20): 207303.
doi: 10.7498/aps.62.207303
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Dong Hai-Ming. Investigation on mobility of single-layer MoS2 at low temperature. Acta Physica Sinica,
2013, 62(20): 206101.
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Yu Huang-Zhong. Measurement of the hole mobility in the blend system by space charge limited current. Acta Physica Sinica,
2012, 61(8): 087204.
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Luo Yang, Duan Yu, Chen Ping, Zang Chun-Liang, Xie Yue, Zhao Yi, Liu Shi-Yong. Preliminary investigation on the method of determining electron mobility of tris (8-hydroxyquinolinato) aluminum by space charge limited current. Acta Physica Sinica,
2012, 61(14): 147801.
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Wang Ping-Ya, Zhang Jin-Feng, Xue Jun-Shuai, Zhou Yong-Bo, Zhang Jin-Cheng, Hao Yue. Transport properties of two-dimensional electron gas in lattice-matched InAlN/GaN and InAlN/AlN/GaN materials. Acta Physica Sinica,
2011, 60(11): 117304.
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Zhang Jin-Feng, Wang Ping-Ya, Xue Jun-Shuai, Zhou Yong-Bo, Zhang Jin-Cheng, Hao Yue. High electron mobility lattice-matched InAlN/GaN materials. Acta Physica Sinica,
2011, 60(11): 117305.
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Dai Yue-Hua, Chen Jun-Ning, Ke Dao-Ming, Sun Jia-E, Hu Yuan. An analytical model of mobility in nano-scaled n-MOSFETs. Acta Physica Sinica,
2006, 55(11): 6090-6094.
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Xu Xue-Mei, Peng Jing-Cui, Li Hong-Jian, Qu Shu, Zhao Chu-Jun, Luo Xiao-Hua. Effects of organic/organic interface on recombination efficiency in double-layer organic diodes. Acta Physica Sinica,
2004, 53(1): 286-290.
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YUAN DE-RONG, QIAO LING-ZHI. KINK SOLITON EXCITATION IN HYDROGEN BONDED CHAIN WITH ASYMMETRIC DOUBLE WELL POTENTIALS. Acta Physica Sinica,
2001, 50(3): 394-397.
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LI ZHI-FENG, LU WEI, YE HONG-JUAN, YUAN XIAN-ZHANG, SHEN XUE-CHU, G.Li, S.J.Chua. OPTICAL SPECTROSCOPY STUDY ON CARRIER CONCENTRATION AND MOBILITY IN GaN. Acta Physica Sinica,
2000, 49(8): 1614-1619.
doi: 10.7498/aps.49.1614
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