-
-
(1)湖南大学应用物理系,长沙410082; (2)湖南大学应用物理系,长沙410082,中南大学物理科学与技术学院,长沙410083
-
-
[1] Zhang Leng, Shen Yu-Hao, Tang Chao-Yang, Wu Kong-Ping, Zhang Peng-Zhan, Liu Fei, Hou Ji-Wei. Effect of uniaxial strain on Hole mobility of Sb2Se3. Acta Physica Sinica, 2024, 73(11): 117101. doi: 10.7498/aps.73.20240175 [2] Zhang Leng, Zhang Peng-Zhan, Liu Fei, Li Fang-Zheng, Luo Yi, Hou Ji-Wei, Wu Kong-Ping. Carrier mobility in doped Sb2Se3 based on deformation potential theory. Acta Physica Sinica, 2024, 73(4): 047101. doi: 10.7498/aps.73.20231406 [3] Zhang Lei, Chen Qi-Hang, Cao Shuo, Qian Ping. First-principles calculations of carrier mobility in monolayer IrSCl and IrSI. Acta Physica Sinica, 2024, 73(21): 217201. doi: 10.7498/aps.73.20241044 [4] Di Lin-Jia, Dai Xian-Ying, Song Jian-Jun, Miao Dong-Ming, Zhao Tian-Long, Wu Shu-Jing, Hao Yue. Calculations of energy band structure and mobility in critical bandgap strained Ge1-xSnx based on Sn component and biaxial tensile stress modulation. Acta Physica Sinica, 2018, 67(2): 027101. doi: 10.7498/aps.67.20171969 [5] Li Wei-Sheng, Zhou Jian, Wang Han-Chen, Wang Shu-Xian, Yu Zhi-Hao, Li Song-Lin, Shi Yi, Wang Xin-Ran. Logical integration device for two-dimensional semiconductor transition metal sulfide. Acta Physica Sinica, 2017, 66(21): 218503. doi: 10.7498/aps.66.218503 [6] Zhang Li-Yong, Fang Liang, Peng Xiang-Yang. First-principles study on multiphase property and phase transition of monolayer MoS2. Acta Physica Sinica, 2016, 65(12): 127101. doi: 10.7498/aps.65.127101 [7] Bai Min, Xuan Rong-Xi, Song Jian-Jun, Zhang He-Ming, Hu Hui-Yong, Shu Bin. Hole scattering and mobility in compressively strained Ge/(001)Si1-xGex. Acta Physica Sinica, 2015, 64(3): 038501. doi: 10.7498/aps.64.038501 [8] Gao Ya-Na, Li Xi-Feng, Zhang Jian-Hua. Solution-processed high performance HIZO thin film transistor with AZO gate dielectric. Acta Physica Sinica, 2014, 63(11): 118502. doi: 10.7498/aps.63.118502 [9] Tang Xin-Yue, Gao Hong, Pan Si-Ming, Sun Jian-Bo, Yao Xiu-Wei, Zhang Xi-Tian. Electrical characteristics of individual In-doped ZnO nanobelt field effect transistor. Acta Physica Sinica, 2014, 63(19): 197302. doi: 10.7498/aps.63.197302 [10] Liu Rui-Lan, Wang Xu-Liang, Tang Chao. Identification for hole transporting properties of NPB based on particle swarm optimization algorithm. Acta Physica Sinica, 2014, 63(2): 028105. doi: 10.7498/aps.63.028105 [11] Wang Hong-Pei, Wang Guang-Long, Yu Ying, Xu Ying-Qiang, Ni Hai-Qiao, Niu Zhi-Chuan, Gao Feng-Qi. Properties of δ doped GaAs/AlxGa1-xAs 2DEG with embedded InAs quantum dots. Acta Physica Sinica, 2013, 62(20): 207303. doi: 10.7498/aps.62.207303 [12] Dong Hai-Ming. Investigation on mobility of single-layer MoS2 at low temperature. Acta Physica Sinica, 2013, 62(20): 206101. doi: 10.7498/aps.62.206101 [13] Yu Huang-Zhong. Measurement of the hole mobility in the blend system by space charge limited current. Acta Physica Sinica, 2012, 61(8): 087204. doi: 10.7498/aps.61.087204 [14] Luo Yang, Duan Yu, Chen Ping, Zang Chun-Liang, Xie Yue, Zhao Yi, Liu Shi-Yong. Preliminary investigation on the method of determining electron mobility of tris (8-hydroxyquinolinato) aluminum by space charge limited current. Acta Physica Sinica, 2012, 61(14): 147801. doi: 10.7498/aps.61.147801 [15] Wang Ping-Ya, Zhang Jin-Feng, Xue Jun-Shuai, Zhou Yong-Bo, Zhang Jin-Cheng, Hao Yue. Transport properties of two-dimensional electron gas in lattice-matched InAlN/GaN and InAlN/AlN/GaN materials. Acta Physica Sinica, 2011, 60(11): 117304. doi: 10.7498/aps.60.117304 [16] Zhang Jin-Feng, Wang Ping-Ya, Xue Jun-Shuai, Zhou Yong-Bo, Zhang Jin-Cheng, Hao Yue. High electron mobility lattice-matched InAlN/GaN materials. Acta Physica Sinica, 2011, 60(11): 117305. doi: 10.7498/aps.60.117305 [17] Dai Yue-Hua, Chen Jun-Ning, Ke Dao-Ming, Sun Jia-E, Hu Yuan. An analytical model of mobility in nano-scaled n-MOSFETs. Acta Physica Sinica, 2006, 55(11): 6090-6094. doi: 10.7498/aps.55.6090 [18] Xu Xue-Mei, Peng Jing-Cui, Li Hong-Jian, Qu Shu, Zhao Chu-Jun, Luo Xiao-Hua. Effects of organic/organic interface on recombination efficiency in double-layer organic diodes. Acta Physica Sinica, 2004, 53(1): 286-290. doi: 10.7498/aps.53.286 [19] YUAN DE-RONG, QIAO LING-ZHI. KINK SOLITON EXCITATION IN HYDROGEN BONDED CHAIN WITH ASYMMETRIC DOUBLE WELL POTENTIALS. Acta Physica Sinica, 2001, 50(3): 394-397. doi: 10.7498/aps.50.394 [20] LI ZHI-FENG, LU WEI, YE HONG-JUAN, YUAN XIAN-ZHANG, SHEN XUE-CHU, G.Li, S.J.Chua. OPTICAL SPECTROSCOPY STUDY ON CARRIER CONCENTRATION AND MOBILITY IN GaN. Acta Physica Sinica, 2000, 49(8): 1614-1619. doi: 10.7498/aps.49.1614
Catalog
Metrics
- Abstract views: 9656
- PDF Downloads: 1464
- Cited By: 0
Publishing process
- Received Date:
07 January 2002
- Accepted Date:
06 March 2002
- Published Online:
05 May 2002
下载:
