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Zhang Lei, Chen Qi-Hang, Cao Shuo, Qian Ping. First-principles calculations of carrier mobility in monolayer IrSCl and IrSI. Acta Physica Sinica,
2024, 73(21): 217201.
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Zhang Leng, Shen Yu-Hao, Tang Chao-Yang, Wu Kong-Ping, Zhang Peng-Zhan, Liu Fei, Hou Ji-Wei. Effect of uniaxial strain on Hole mobility of Sb2Se3. Acta Physica Sinica,
2024, 73(11): 117101.
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Zhang Leng, Zhang Peng-Zhan, Liu Fei, Li Fang-Zheng, Luo Yi, Hou Ji-Wei, Wu Kong-Ping. Carrier mobility in doped Sb2Se3 based on deformation potential theory. Acta Physica Sinica,
2024, 73(4): 047101.
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Zhou Zhan-Hui, Li Qun, He Xiao-Min. Electron transport mechanism in AlN/β-Ga2O3 heterostructures. Acta Physica Sinica,
2023, 72(2): 028501.
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Di Lin-Jia, Dai Xian-Ying, Song Jian-Jun, Miao Dong-Ming, Zhao Tian-Long, Wu Shu-Jing, Hao Yue. Calculations of energy band structure and mobility in critical bandgap strained Ge1-xSnx based on Sn component and biaxial tensile stress modulation. Acta Physica Sinica,
2018, 67(2): 027101.
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2015, 64(3): 038501.
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Liu Rui-Lan, Wang Xu-Liang, Tang Chao. Identification for hole transporting properties of NPB based on particle swarm optimization algorithm. Acta Physica Sinica,
2014, 63(2): 028105.
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Liu Bin-Li, Tang Yong, Luo Yi-Fei, Liu De-Zhi, Wang Rui-Tian, Wang Bo. Investigation of the prediction model of IGBT junction temperature based on the rate of voltage change. Acta Physica Sinica,
2014, 63(17): 177201.
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Wang Hong-Pei, Wang Guang-Long, Yu Ying, Xu Ying-Qiang, Ni Hai-Qiao, Niu Zhi-Chuan, Gao Feng-Qi. Properties of δ doped GaAs/AlxGa1-xAs 2DEG with embedded InAs quantum dots. Acta Physica Sinica,
2013, 62(20): 207303.
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Dong Hai-Ming. Investigation on mobility of single-layer MoS2 at low temperature. Acta Physica Sinica,
2013, 62(20): 206101.
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Zheng Xin, Jiang Tian, Cheng Xiang-Ai, Jiang Hou-Man, Lu Qi-Sheng. A new phenomenon of photoconductive InSb detector under the irradiation of out-band laser. Acta Physica Sinica,
2012, 61(4): 047302.
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Yu Huang-Zhong. Measurement of the hole mobility in the blend system by space charge limited current. Acta Physica Sinica,
2012, 61(8): 087204.
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Luo Yang, Duan Yu, Chen Ping, Zang Chun-Liang, Xie Yue, Zhao Yi, Liu Shi-Yong. Preliminary investigation on the method of determining electron mobility of tris (8-hydroxyquinolinato) aluminum by space charge limited current. Acta Physica Sinica,
2012, 61(14): 147801.
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Zhang Jin-Feng, Wang Ping-Ya, Xue Jun-Shuai, Zhou Yong-Bo, Zhang Jin-Cheng, Hao Yue. High electron mobility lattice-matched InAlN/GaN materials. Acta Physica Sinica,
2011, 60(11): 117305.
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Dai Yue-Hua, Chen Jun-Ning, Ke Dao-Ming, Sun Jia-E, Hu Yuan. An analytical model of mobility in nano-scaled n-MOSFETs. Acta Physica Sinica,
2006, 55(11): 6090-6094.
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Xu Jing-Ping, Li Chun-Xia, Wu Hai-Ping. Analyses on high-temperature electrical properties of 4H-SiC n-MOSFET. Acta Physica Sinica,
2005, 54(6): 2918-2923.
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Yang Jing, Li Jing-Zhen, Sun Xiu-Quan, Gong Xiang-Dong. Simulation of step response of silane low-temperature pasma(1). Acta Physica Sinica,
2005, 54(7): 3251-3256.
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Xu Xue-Mei, Peng Jing-Cui, Li Hong-Jian, Qu Shu, Luo Xiao-Hua. . Acta Physica Sinica,
2002, 51(10): 2380-2385.
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FENG PEI-CHENG, TANG YI. A SINGULAR PERTURBATION THEORY FOR THE STUDY OF NEWTONIAN DYNAMICAL BEHAVIOUR OF KINK. Acta Physica Sinica,
2001, 50(7): 1213-1216.
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LI ZHI-FENG, LU WEI, YE HONG-JUAN, YUAN XIAN-ZHANG, SHEN XUE-CHU, G.Li, S.J.Chua. OPTICAL SPECTROSCOPY STUDY ON CARRIER CONCENTRATION AND MOBILITY IN GaN. Acta Physica Sinica,
2000, 49(8): 1614-1619.
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