Ultrafast carrier kinetics at surface and interface of Sb<sub>2</sub>Se<sub>3</sub> film by transient reflectance

Huang Hao; Niu Ben; Tao Ting-Ting; Luo Shi-Ping; Wang Ying; Zhao Xiao-Hui; Wang Kai; Li Zhi-Qiang; Dang Wei

doi:10.7498/aps.71.20211714

Abstract

Antimony selenide (Sb₂Se₃) is a promising low-cost and environmentally-friendly semiconductor photovoltaic material. The power conversion efficiency of Sb₂Se₃ solar cells has been improved to $ \sim $10% in the past few years. The carrier recombination transfer dynamics is significant factor that affects the efficiency of Sb₂Se₃ solar cells. In this work, carrier recombination on the Sb₂Se₃ surface and carrier transfer dynamics at the CdS/Sb₂Se₃ heterojunction interface are systematically investigated by surface transient reflectance. According to the evolution of relative reflectance change ${{\Delta }{R}}/{{R}}$, the carrier thermalization and band gap renormalization time of Sb₂Se₃ are determined to be in a range from 0.2 to 0.5 ps, and carrier cooling time is estimated to be about 3－4 ps. Our results also demonstrate that both free electron and shallow-trapped electron transfer occur at the Sb₂Se₃/CdS interface after photo excitation. Our results present a method of explaining the transient reflectance of Sb₂Se₃ and enhancing the understanding of carrier kinetics at Sb₂Se₃ surface and Sb₂Se₃/CdS interface.

Keywords:

Authors and contacts

Hebei Key Laboratory of Optic-Electronic Information and Materials, College of Physics Science and Technology, Hebei University, Baoding 071002, China

Corresponding author: Dang Wei, dangwei@hbu.edu.cn

Funds: Project supported by the National Key Technologies Research and Development Program of the Ministry of Science and Technology of China (Grant No. 2019YFB503404), the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 21503066), the Research Foundation of Education Bureau of Hebei Province, China (Grant No. ZD2019037), the Natural Science Foundation for Distinguished Young Scholars of Hebei Province, China (Grant No. F2019201289), and the Young Scientists Fund of the Natural Science Foundation of Hebei Province, China (Grant No. F2017201136)

[1]	Chen C, Li W Q, Zhou Y, Chen C, Luo M, Liu X S, Zeng K, Yang B, Zhang C W, Han J B, Tang J 2015 Appl. Phys. Lett. 107 043905
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图 1 (a)两种厚度Sb₂Se₃薄膜在760和860 nm处$ {{\Delta }{R}}/{{R}} $归一化曲线比较; (b) Sb₂Se₃/空气界面$ \dfrac{\partial{R}}{{\partial n}} $和$ \dfrac{\partial{R}}{{\partial k}} $曲线; (c) Sb₂Se₃/空气界面$ {{\Delta }{R}}/{{R}} $随温度的变化, 其中R为300 K时的界面反射率, $ {\Delta }{R} $为相对300 K条件下界面反射率的变化

Figure 1. (a) Comparisons of $ {{\Delta }{R}}/{{R}} $ curves at probe wavelengths of 760 and 860 nm from Sb₂Se₃ film of two thicknesses, where the $ {{\Delta }{R}}/{{R}} $ curves have been normalized; (b) $ \dfrac{\partial{R}}{{\partial n}} $ and $ \dfrac{\partial{R}}{{\partial k}} $ curves of Sb₂Se₃/air interface; (c) dependence of $ {{\Delta }{R}}/{{R}} $ at Sb₂Se₃/air interface on temperature, where R is the reflectivity of the interface at 300 K, and $ {\Delta }{R} $ is the reflectivity difference with respect to R of the interface at 300 K.

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图 2 Sb₂Se₃薄膜载流子弛豫过程示意图

Figure 2. Schematic diagram of carrier relaxation in Sb₂Se₃ film.

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图 3 (a) Sb₂Se₃与Sb₂Se₃/CdS薄膜的吸收光谱; (b) Sb₂Se₃与Sb₂Se₃/CdS薄膜的XRD图谱; (c) Sb₂Se₃薄膜的表面形貌; (d) Sb₂Se₃薄膜的截面形貌

Figure 3. (a) Absorbance spectra of Sb₂Se₃ and Sb₂Se₃/CdS film; (b) XRD diffraction spectra of Sb₂Se₃ and Sb₂Se₃/CdS film; (c) surface morphologies of Sb₂Se₃ film; (d) cross-sectional morphology of Sb₂Se₃ film.

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图 4 (a) Sb₂Se₃薄膜的相对反射率变化$ {{\Delta }{R}}/{{R}} $的二维图像(激发波长550 nm, 载流子浓度1.55 × 10²⁰cm^–3); (b)典型时间延迟对应的$ {{\Delta }{R}}/{{R}} $谱; (c)典型探测波长对应的$ {{\Delta }{R}}/{{R}} $动力学曲线

Figure 4. (a) Two-dimensional image of relative reflectivity change $ {{\Delta }{R}}/{{R}} $ of Sb₂Se₃ film excited by 550 nm laser (300 nJ); (b) $ {{\Delta }{R}}/{{R}} $ with various probe wavelengths at three typical time delays; (c) evolutions of $ {{\Delta }{R}}/{{R}} $ of four typical probe wavelengths

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图 5 (a)不同激发光子能量条件下860 nm探测波长处$ {{\Delta }{R}}/{{R}} $动力学曲线比较; (b)不同激发光子能量条件下载流子热化和带隙收缩时间; (c)不同载流子浓度条件下860 nm探测波长处$ {{\Delta }{R}}/{{R}} $动力学曲线比较(激发波长550 nm); (d)不同载流子浓度条件下载流子热化和带隙收缩时间

Figure 5. (a) Comparisons of kinetic curves of $ {{\Delta }{R}}/{{R}} $ at probe wavelength 860 nm with different excitation photon energies; (b) carrier thermalization and band gap renormalization times with different excitation photon energies; (c) comparisons of kinetic curves of $ {{\Delta }{R}}/{{R}} $ with different carrier concentrations (excitation wavelength of 550 nm); (d) carrier thermalization and band gap renormalization time with different carrier concentrations.

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图 6 (a)不同激发光子能量条件下探测波长760 nm处${{\Delta }{R}}/{{R}}$的动力学过程II比较; (b)不同激发光子能量条件下${{\Delta }{R}}/{{R}}$的动力学过程II的衰减寿命

Figure 6. (a) Comparisons of kinetics II of ${{\Delta }{R}}/{{R}}$ at 760 nm with different excitation photon energies; (b) decay lifetime of kinetics II of ${{\Delta }{R}}/{{R}}$ with different excitation energies.

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图 7 (a)典型时间延迟条件下Sb₂Se₃/CdS的相对反射率变化$ {{\Delta }{R}}/{{R}} $谱(激发波长650 nm); (b) Sb₂Se₃和Sb₂Se₃/CdS在495 nm处${{\Delta }{R}}/{{R}}$动力学曲线对比

Figure 7. (a) Relative reflectance change $ {{\Delta }{R}}/{{R}} $ spectra of Sb₂Se₃/CdS at three time delays (excitation wavelength of 650 nm); (b) comparison of kinetic curves of $ {{\Delta }{R}}/{{R}} $ at 495 nm for Sb₂Se₃ and Sb₂Se₃/CdS.

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图 8 4种载流子浓度条件下Sb₂Se₃与Sb₂Se₃/CdS在760 nm处的$ {{\Delta }{R}}/{{R}} $的动力学曲线对比　(a) $ 4.79\times {10}^{19} $ cm^–3; (b) 9.59 × 10¹⁹ cm^–3; (c) 1.44 × 10²⁰ cm^–3; (d) 1.92 × 10²⁰ cm^–3

Figure 8. Comparisons of kinetics of $ {{\Delta }{R}}/{{R}} $ at 760 nm for Sb₂Se₃ and Sb₂Se₃/CdS under four different carrier concentrations of (a) $ 4.79\times {10}^{19} $ cm^–3, (b) 9.59 × 10¹⁹ cm^–3, (c) 1.44 × 10²⁰ cm^–3, (d) 1.92 × 10²⁰ cm^–3

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图 9 Sb₂Se₃/CdS界面处的主要载流子过程(CB, 导带; VB, 价带)

Figure 9. Main carrier processes at the interface of Sb₂Se₃/CdS (CB, conduction band; VB, valence band).

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[1]	Chen C, Li W Q, Zhou Y, Chen C, Luo M, Liu X S, Zeng K, Yang B, Zhang C W, Han J B, Tang J 2015 Appl. Phys. Lett. 107 043905
[2]	Kosek F, Tulka J, Štourač L 1978 Czech. J. Phys. B 28 325 Google Scholar
[3]	Madelung O, Rössler U, Schulz M 2004 Semiconductor: Data Handbook (Vol. 41) (New York: Springer-Verlag Berlin Heidelbergy) pp622–623
[4]	Zhou Y, Leng M Y, Xia Z, Zhong J, Song H B, Liu X S, Yang B, Zhang J P, Chen J, Zhou K H, Han J B, Cheng Y B, Tang J 2014 Adv. Energy Mater. 4 1301846 Google Scholar
[5]	Liu T, Liang X Y, Liu Y F, Li X L, Wang S F, Mai Y H, Li Z Q 2021 Adv. Sci. 8 2100868 Google Scholar
[6]	Tang R F, Wang X M, Lian W T, Huang J L, Wei Q, Huang M L, Yin Y W, Jiang C H, Yang S F, Xing G C, Chen S Y, Zhu C F, Hao X J, Green M A, Chen T 2020 Nat. Energy 5 587 Google Scholar
[7]	Chen G H, Wang W L, Wang C D, Ding T, Yang, Q 2015 Adv. Sci. 2 1500109 Google Scholar
[8]	Zhou Y D, Wei F, Qian X Q, Yu L D, Han X G, Fan G L, Chen Y, Zhu J 2019 ACS Appl. Mater. Interfaces 11 19712 Google Scholar
[9]	Wu W, Li Y, Liang L M, Hao Q Y, Zhang J, Liu H, Liu C C 2019 J. Phys. Chem. C 123 14781 Google Scholar
[10]	Yang W, Lee S, Kwon H C, Tan J W, Lee H, Park J, Oh Y J, Choi H, Moon J 2018 ACS Nano 12 11088 Google Scholar
[11]	Wang K, Chen C, Liao H Y, Wang, S Y, Tang J, Beard M C, Yang Y 2019 J. Phys. Chem. Lett. 10 4881 Google Scholar
[12]	Grad L, Rohr von F, Zhao J Z, Hengsberger M, Osterwalder J 2020 Phys. Rev. Mater. 4 105404 Google Scholar
[13]	Singh P, Ghorai N, Thakur A, Ghosh H N 2021 J. Phys. Chem. C 125 5197 Google Scholar
[14]	Zhang Z Y, Hu M C, Jia T Y, Du J, Chen C, Wang C W, Liu Z Z, Shi T C, Tang J, Leng Y X 2021 ACS Energy Lett. 6 1740 Google Scholar
[15]	Huang M L, Xu P, Han D, Tang J, Chen S Y 2019 ACS Appl. Mater. Interfaces 11 15564 Google Scholar
[16]	Henry C H, Logan R A, Bertness K A 1981 J. Appl. Phys. 52 4457 Google Scholar
[17]	Pashinkin A S, Malkova A S, Mikhailova M S 2008 Russ. J. Phys. Chem. A 82 1035 Google Scholar
[18]	Zhang Y, Das Sarma S 2005 Phys. Rev. B 72 125303 Google Scholar
[19]	Wolff P A 1962 Phys. Rev. 126 405 Google Scholar
[20]	滕利华, 王霞, 赖天树 2011 物理学报 60 047201 Google Scholar Teng L H, Wang X, Lai T S 2011 Acta Phys. Sin. 60 047201 Google Scholar
[21]	Prabhu S S, Vengurlekar A S 2004 J. Appl. Phys. 95 7803 Google Scholar
[22]	Shank C V, Fork R L, Leheny R F, Shah J 1979 Phys. Rev. Lett. 42 112 Google Scholar
[23]	Tian L, Mario di L, Zannier V, Catone D, Colonna S, O’Keeffe P, Turchini S, Zema N, Rubini S, Martelli F 2016 Phys. Rev. B 94 165442 Google Scholar
[24]	Joly A G, Williams J R, Chambers S A, Xiong G, Hess W P, Laman D M 2006 J. Appl. Phys. 99 053521 Google Scholar
[25]	Bennett R B, Soref A R, Del Alamo A J 1990 IEEE J. Quantum Electron. 26 113 Google Scholar
[26]	Di Cicco A, Polzoni G, Gunnella R, Trapananti A, Minicucci M, Rezvani S J, Catone D, Di Mario L, Pelli Cresi J S, Turchini S, Martelli F 2020 Sci. Rep. 10 17363 Google Scholar
[27]	Li Z Q, Liang X Y, Li G, Liu H X, Zhang H Y, Guo J X, Chen J W, Shen K, San X Y, Yu W, Schropp Ruud E I, Mai Y H 2019 Nat. Commun. 10 125 Google Scholar
[28]	Jani H, Duan L Z 2020 Phys. Rev. Appl. 13 054010 Google Scholar
[29]	Syrbu N N, Zalamai V V, Stamov I G, Beril S I 2020 Beilstein J. Nanotechnol. 11 1045 Google Scholar
[30]	Wen Y C, Chen C Y, Shen C H, Gwo S, Sun C K 2006 Appl. Phys. Lett. 89 232114 Google Scholar
[31]	Lobad A, Schlie L A 2004 J. Appl. Phys. 95 97
[32]	Nozik A J 2008 Nat. Energy 3 170 Google Scholar
[33]	Li D B, Yin X X, Grice C R, Guan L, Song Z N, Wang C L, Chen C, Li K H, Cimaroli A J, Awni R A, Zhao D W, Song H S, Tang W H, Yan Y F, Tang J 2018 Nano Energy 49 346 Google Scholar
[34]	Liu X S, Chen J, Luo M, Leng M Y, Xia Z, Zhou Y, Qin S K, Xue D J, Lv L, Huang H, Niu D M, Tang J 2014 ACS Appl. Mater. Interfaces 6 10687 Google Scholar

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Ultrafast carrier kinetics at surface and interface of Sb₂Se₃ film by transient reflectance

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Ultrafast carrier kinetics at surface and interface of Sb2Se3 film by transient reflectance

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Ultrafast carrier kinetics at surface and interface of Sb₂Se₃ film by transient reflectance