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Semiconductor disk lasers (SDLs) have advantages of high output power and good beam quality. Their flexible external cavity provides convenience for inserting additional optical element to start mode locking and produce ultra-short pulse train with duration from picosecond to femtosecond. However, the very short lifetime in a range from about a few nanoseconds to tens of nanoseconds of the carrier in semiconductor gain medium limits the decrease of pulse repetition rate, thus restricting the increase of peak power of the mode-locked laser pulse to some extent. In this work, by using the relatively shallow In0.2GaAs quantum wells, which have a relatively long carrier lifetime in the active region of gain chip, as well as the particularly designed semiconductor saturable absorption mirror (SESAM) that has a relatively small saturation flux, a passively mode-locked SDL with low repetition rate and high peak power is demonstrated. The used six-mirror cavity has a spot radius of about 200 μm on the chip and a 40 μm spot on the SESAM, and the total cavity length is about 1.92 m. The SESAM passively mode-locked SDL produces a stable pulse train with a lowest repetition rate of 78 MHz. When the temperature is 12 ℃ and the transmittance of the output coupler is T = 3%, an average output power value of 2.1 W and a pulse duration of 2.08 ps are achieved. The corresponding pulse peak power reaches 12.8 kW, which is about twice the reported highest peak power in an SESAM mode-locked SDL. When T = 2% and T = 5%, the obtained average output power values are 1.34 W and 1.62 W respectively, and the corresponding pulse peak power values are 8.17 kW and 9.88 kW. Based on the values reported in the literature and the results of pulse repetition rate in our experiments, the estimated lifetime of the carriers of the In0.2GaAs quantum wells in the active region of the gain used chip is 16.4 ns. This high peak power mode-locked semiconductor disk laser has important potential applications in biomedical photonics, chemistry, and nonlinear microscopy.
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Keywords:
- semiconductor disk laser /
- semiconductor saturable absorption mirror /
- mode-locked /
- peak power
[1] 李玉娇, 宗楠, 彭钦军 2018 激光与光电子学进展 55 49
Google Scholar
Li Y J, Zong N, Peng Q J 2018 Laser Optoelectron. Prog. 55 49
Google Scholar
[2] Rahimi-Iman A 2016 J. Optics-UK 18 093003
Google Scholar
[3] Guina M, Rantamäki A, Härkönen A 2017 J. Phys. D Appl. Phys. 50 383001
Google Scholar
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Google Scholar
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Google Scholar
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Google Scholar
[7] Klopp P, Griebner U, Zorn M, Weyers M 2011 Appl. Phys. Lett. 98 071103
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Google Scholar
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Google Scholar
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[17] Chen Y C, Wang P, Coleman J J, Bour D P, Lee K K, Waters R G 1991 IEEE J. Quantum Elect. 27 1451
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[18] Ehrlich J E, Neilson D T, Walker A C, Kennedy G T, Grant R S, Sibbett W, Hopkinson M 1993 Semicond. Sci. Technol. 8 307
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[21] Antal P G, Szipőcs R 2012 Appl. Phys. B 107 17
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[22] Seres E, Seres J, Spielmann C 2012 Opt. Express 20 6185
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图 1 增益芯片外延结构简图
Figure 1. Diagram of the epitaxy structure of gain chip.
图 2 低重复频率SESAM锁模SDL光路图
Figure 2. Schematic of the low repetition frequency SESAM mode-locked SDL.
图 3 SESAM锁模SDL实物图, 图中标出了谐振腔中各元件及光路
Figure 3. Photograph of the SESAM mode-locked SDL. The resonant cavity and optical path are also plotted.
图 4 谐振腔中激光腔模半径大小随位置的变化
Figure 4. Evolution of the radius of cavity mode in the resonator.
图 5 连续光功率随吸收泵浦功率的变化, 内插图为激光光谱
Figure 5. Output power of the continuous-wave laser vs. absorbed pump power, the inset is the laser spectrum.
图 6 78 MHz锁模SDL时域波形图
Figure 6. Pulse train of the 78 MHz mode-locked SDL.
图 7 78 MHz锁模SDL射频频谱图
Figure 7. Radio frequency spectrum of the 78 MHz mode-locked SDL.
图 8 (a) 78 MHz锁模SDL光谱图; (b) 脉冲宽度的自相关测量结果
Figure 8. (a) Spectrum of the 78 MHz mode-locked SDL; (b) autocorrelation trace of the mode-locked pulses.
图 9 不同输出镜透过率下锁模SDL的输出功率
Figure 9. Output power of the mode-locked SDL under different OC with various transmittance.
表 1 已报道锁模SDL的重要成果一览表
Table 1. List of important results of mode-locked SDL have been reported.
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[1] 李玉娇, 宗楠, 彭钦军 2018 激光与光电子学进展 55 49
Google Scholar
Li Y J, Zong N, Peng Q J 2018 Laser Optoelectron. Prog. 55 49
Google Scholar
[2] Rahimi-Iman A 2016 J. Optics-UK 18 093003
Google Scholar
[3] Guina M, Rantamäki A, Härkönen A 2017 J. Phys. D Appl. Phys. 50 383001
Google Scholar
[4] Keller U, Weingarten K J, Kartner F X, Kopf D, Braun B, Jung I D, Fluck R, Honninger C, Matuschek N, Der Au J A 1996 IEEE J. Sel. Top. Quant. 2 435
Google Scholar
[5] Hoogland S, Dhanjal S, Tropper A C, Roberts S J, Häring R, Paschotta R, Keller U 2000 IEEE Photonic. Tech. L. 12 1135
Google Scholar
[6] Garnache A, Hoogland S, Tropper A C, Sagnes I, Saint-Girons G, Roberts J S 2002 Appl. Phys. Lett. 80 3892
Google Scholar
[7] Klopp P, Griebner U, Zorn M, Weyers M 2011 Appl. Phys. Lett. 98 071103
Google Scholar
[8] Quarterman A H, Wilcox K G, Apostolopoulos V, Mihoubi Z, Elsmere S P, Farrer I, Ritchie D A, Tropper A C 2009 Nat. Photonics 3 729
Google Scholar
[9] Scheller M, Wang T L, Kunert B, Stolz W, Koch S W, Moloney J V 2012 Electron. Lett. 48 588
Google Scholar
[10] Wilcox K G, Tropper A C, Beere H E, Ritchie D A, Kunert B, Heinen B, Stolz W 2013 Opt. Express 21 1599
Google Scholar
[11] Baker C W, Scheller M, Laurain A, Ruiz-Perez A, Stolz W, Addamane S, Balakrishnan G, Koch S W, Jones R J, Moloney J V 2017 IEEE Photonic. Tech. L. 29 326
Google Scholar
[12] Kornaszewski L, Maker G, Malcolm G P A, Butkus M, Rafailov E U, Hamilton C J 2012 Laser Photon. Rev. 6 L20
Google Scholar
[13] Lorenser D, Maas D J H C, Unold H J, Bellancourt A R, Rudin B, Gini E, Ebling D, Keller U 2006 IEEE J. Quantum Elect. 42 838
Google Scholar
[14] Saarinen E J, Rantamaki A, Chamorovskiy A, Okhotnikov O G 2012 Electron. Lett. 48 1355
Google Scholar
[15] Butkus M, Viktorov E A, Erneux T, Hamilton C J, Maker G, Malcolm G P A, Rafailov E U 2013 Opt. Express 21 25526
Google Scholar
[16] Wilcox K G, Quarterman A H, Beere H E, Ritchie D A, Tropper A C 2011 Opt. Express 19 23453
Google Scholar
[17] Chen Y C, Wang P, Coleman J J, Bour D P, Lee K K, Waters R G 1991 IEEE J. Quantum Elect. 27 1451
Google Scholar
[18] Ehrlich J E, Neilson D T, Walker A C, Kennedy G T, Grant R S, Sibbett W, Hopkinson M 1993 Semicond. Sci. Technol. 8 307
Google Scholar
[19] Alfieri C G E, Waldburger D, Link S M, Gini E, Golling M, Eisenstein G, Keller U 2017 Opt. Express 25 6402
Google Scholar
[20] Keller U 1994 Appl. Phys. B 58 347
Google Scholar
[21] Antal P G, Szipőcs R 2012 Appl. Phys. B 107 17
Google Scholar
[22] Seres E, Seres J, Spielmann C 2012 Opt. Express 20 6185
Google Scholar
[23] Carlin C Z, Bradshaw G K, Samberg J P, Colter P C, Bedair S M 2013 IEEE T. Electron Dev. 60 2532
Google Scholar
[24] Ongstad A P, Gallant D J, Dente G C 1995 Appl. Phys. Lett. 66 2730
Google Scholar
[25] Ongstad A P, Tilton M L, Bochove E J, Dente G C 1996 J. Appl. Phys. 80 2866
Google Scholar
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