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High power widely tunable green lasers have potential applications in many fields such as biomedicine, lidar, laser spectroscopy, laser display, underwater wireless optical communication, and fine processing of nonferrous metals. Vertical-external-cavity surface-emitting lasers, also known as semiconductor disk lasers, have the advantages of high power, good beam quality, and wide bandwidth of gain medium. In this work, a gain chip with a reverse-growth epitaxy structure and an emitting wavelength of 1018 nm is designed. In the DBR reflection spectrum, a bandwidth of 74 nm is achieved above a reflectivity of greater than 99.1%, laying a solid foundation for achieving high-power widely tunable output. The laser cavity combines a 1018 nm semiconductor gain chip, a folded mirror, and a plane mirror to construct a compact V-type resonant cavity. A class-I phase-matched LBO nonlinear crystal with a length of 10 mm is placed at the beam waist of the cavity to realize an efficient frequency doubling process to produce a 509 nm green laser. To meet the requirement for the polarization during frequency conversion and to tune the oscillating wavelength of the laser, a birefringent filter (BRF) is employed in the laser resonant cavity. When the thickness of the used BRF is 1 mm, the obtained wavelength tuning range of the fundamental laser and the frequency doubled green laser are 47.1 nm and 20.1 nm, respectively, showing a good tuning capability of the laser. The laser’s performance varies with the thickness of the BRF. When using a 2 mm BRF, a maximum power output of the frequency-doubled green laser reaches 8.23 W during continuous tuning, indicating an ideal compatibility of wide tuning characteristics with a high power output. Meanwhile, its beam quality M 2 factors are 1.00 and 1.03 in the x- and y-direction, respectively, demonstrating a near diffraction-limited excellent beam quality. This green laser also possesses a frequency doubling conversion efficiency of up to 68.2%, which can efficiently converse the fundamental laser into the frequency doubled green laser. The optical-to-optical conversion efficiency from the absorbed pump light to the frequency-doubled green light also reaches 16.6%. Meanwhile, from the spectral linewidths of the green lasers under different thickness values of BRFs it is found that the thicker the BRF, the narrower the laser line width is, which is consistent with the theoretical result.
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Keywords:
- external cavity surface emitting laser /
- intracavity frequency doubling /
- green laser birefringent filter /
- tunable laser
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图 1 (a) VECSEL外延片结构示意图; (b) 增益芯片的反射谱及荧光谱
Figure 1. (a) Schematics of the epitaxial structure of the VECSEL wafer; (b) the reflection spectrum and the PL spectrum of the gain chip.
图 2 (a) 倍频绿光VECSEL的V型谐振腔结构图; (b) 实验装置实物图
Figure 2. (a) The V-type resonant cavity of the frequency-doubled green VECSEL; (b) the photograph of the experimental setup.
图 3 V型谐振腔内基频激光腔模半径随位置的变化
Figure 3. Changes of the cavity mode in the V-type cavity with various position.
图 4 BRF厚度为1 , 2, 4 mm时基频激光的波长调谐范围
Figure 4. Tuning range of the fundamental laser with BRF thicknesses of 1, 2, and 4 mm.
图 5 BRF厚度为1, 2, 4 mm倍频绿光的波长调谐范围
Figure 5. Tuning range of the frequency-doubled green laser with BRF thicknesses of 1, 2, and 4 mm.
图 6 腔内插入厚度为1, 2, 4 mm的BRF时倍频绿光的输出功率曲线
Figure 6. Output powers of the frequency-doubled green laser under different BRF thicknesses of 1, 2, and 4 mm.
图 7 (a) 基频激光与倍频绿光功率对比曲线; (b) 吸收泵浦光到倍频绿光转换效率曲线
Figure 7. (a) Comparison of the output powers of the fundamental laser and the frequency-doubled green laser; (b) the optical-to-optical efficiency from absorbed pump laser to green laser.
图 8 自由运转及插入不同厚度BRF时VECSEL的光谱线宽
Figure 8. Spectral linewidths of the VECSEL under free operation and inserting BRF with different thicknesses.
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[1] 徐庆扬, 陈少武 2004 物理 33 508
Google Scholar
Xu Q Y, Chen S W 2004 Physics 33 508
Google Scholar
[2] 周远航, 张健, 冯爱新, 尚大智, 陈云, 唐杰, 杨海华 2021 中国激光 48 0602116
Google Scholar
Zhou Y H, Zhang J, Feng A X, Shang D Z, Chen Y, Tang J, Yang H H 2021 Chin. J. Lasers 48 0602116
Google Scholar
[3] 金熙, 张磊, 周颖, 王磊, 曹芬芬 2019 中国激光医学杂志 28 308
Google Scholar
Jin X, Zhang L, Zhou Y, Wang L, Chao F F 2019 Chin. J. Laser Med. Surg. 28 308
Google Scholar
[4] 聂伟, 阚瑞峰, 杨晨光, 陈兵, 许振宇, 刘文清 2018 中国激光 45 0911001
Google Scholar
Nie W, Kan R F, Yang C G, Chen B, Xu Z Y, Liu W Q 2018 Chin. J. Lasers 45 0911001
Google Scholar
[5] 林宏, 王新民, 卢金军, 李卫中 2010 激光与光电子学进展 47 120101
Google Scholar
Lin H, Wang X M, Lu J J, Li W Z 2010 Laser Optoelectron. P. 47 120101
Google Scholar
[6] Rahimi-Iman A 2016 J. Optics-UK 18 093003
Google Scholar
[7] Guina M, Rantamäki A, Härkönen A 2017 J. Phy. D Appl. Phys. 50 383001
Google Scholar
[8] Mangold M, Wittwer V J, Sieber O D 2012 Opt. Express 20 4136
Google Scholar
[9] Chang-Hasnain C J. 2000 IEEE J. Sel. Top. Quant. 6 978
Google Scholar
[10] 李慧娟, 张淼, 李凤琴 2016 中国激光 43 0302003
Google Scholar
Li H J, Zhang M, Li F Q 2016 Chin. J. Lasers 43 0302003
Google Scholar
[11] Wu Y, Shen Y, Addamane S, Reno J L, Williams B S 2021 Opt. Express 29 34695
Google Scholar
[12] Borgentun C, Bengtsson J, Larsson A, Demaria F, Hein A, Unger P 2010 Semiconductor Lasers and Laser Dynamics IV. SPIE Brussels Belgium April 3, 2010 p7720247
[13] Borgentun C, Hessenius C, Bengtsson J, Fallahi M, Larsson A 2011 IEEE Photonics J. 3 946
Google Scholar
[14] Nakdali D A, Gaafar M, Shakfa M K, Zhang F, Vaupel M, Fedorova K A, Koch M 2015 IEEE Photonic. Tech. L. 27 1128
Google Scholar
[15] Broda A, Wójcik-Jedlińska A, Sankowska I, Wasiak M, Wieckowska M, Muszalski J 2017 IEEE Photonic. Tech. L. 29 2215
Google Scholar
[16] Qiu X L, Wang C, Li J, Li C C, Xie X Y, Wang Y L, Wei X 2022 IEEE Photonics J. 14 1545707
Google Scholar
[17] Maclean A J, Kemp A J, Calvez S, Kim J Y, Kim T, Dawson M D, Burns D 2008 IEEE J. Quantum Elect. 44 216
Google Scholar
[18] Lin J P, Helen M P, David J S, Craig J H, Malcolm-Graeme P A 2012 Opt. Express 20 5219
Google Scholar
[19] Hein A, Menzel S, Unger P 2012 Appl. Phys. Lett. 101 111109
Google Scholar
[20] Lukowski M, Hessenius C, Fallahi M 2014 IEEE J. Sel. Top. Quant. 21 432
Google Scholar
[21] 邱小浪, 陈雪花, 朱仁江, 张鹏, 郭于鹤洋, 宋晏蓉 2019 中国激光 46 0401002
Google Scholar
Qiu X L, Chen X H, Zhu R J, Zhang P, Guo Y H Y, Song Y R 2019 Chin. J. Lasers 46 0401002
Google Scholar
[22] Boyd G D, Kleinman D A 1968 J. Appl. Phys. 39 3597
Google Scholar
[23] Smith A V 2018 Crystal Nonlinear Optics: With SNLO Examples (Albuquerque: AS-Photonics
[24] Smith A V 2003 Proc. SPIE 4972 50
Google Scholar
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