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中国物理学会期刊

45 nm宽带可连续调谐半导体薄片激光器

CSTR: 32037.14.aps.70.20210888

45 nm broadband continuously tunable semiconductor disk laser

CSTR: 32037.14.aps.70.20210888
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  • 本文报道了一种宽带可连续调谐的半导体薄片激光器. 增益芯片的有源区由满足谐振周期增益结构的InGaAs多量子阱构成, 其荧光峰值波长位于965 nm附近. 利用增益芯片量子阱的宽带特性, 结合由高反射率外腔镜所构成的直线谐振腔, 可保障激光器较低的损耗和较宽的调谐范围. 在腔内插入不同厚度的双折射滤波片, 可获得连续可调谐的激光波长输出. 当双折射滤波片厚度为2 mm时, 激光器的波长调谐范围为45 nm, 最大输出功率为122 mW, XY方向的光束质量M 2因子分别为1.00和1.02. 文章还对增益芯片面发射谱的温度特性和双折射滤波片对激光线宽的压窄作用进行了讨论.

     

    A broadband continuously tunable semiconductor disk laser is reported in this paper. The active region of gain chip is composed of InGaAs multiple quantum wells with resonant periodic gain structure, and its fluorescence peak wavelength is around 965 nm. Using the wideband characteristics of the quantum wells in gain chip, along with the simple linear cavity that is formed by a high reflectivity external mirror, the laser has a low cavity loss and a wide tuning range. The continuously tunable laser wavelength can be obtained by inserting birefringent filters with different thickness into the cavity. When the thickness of the birefringent filter is 2 mm, the wavelength tuning range of the laser is 45 nm, the maximum output power is 122 mW, and the beam quality M2 factors in the X- and the Y-directions are 1.00 and 1.02, respectively. The temperature characteristics of the surface-emitting spectra of gain chip and the narrowing effect of birefringent filter on laser linewidth h are also discussed.

     

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