Physical properties of novel amorphous superconducting thin film materials for superconducting nanowire single-photon detectors

XU Luo; ZHANG Xiaofu; YOU Lixing

doi:10.7498/aps.74.20250795

Abstract

Amorphous superconducting thin film materials have the advantages of high superconducting uniformity and good optical response sensitivity, which make them ideal materials for fabricating large-area and mid-infrared superconducting nanowire single-photon detectors (SNSPD). In this paper, three series of different amorphous superconducting films are deposited on Si wafers by room-temperature magnetron co-sputtering. For these films, the dependence of their physical properties, i.e. critical temperature T_c, Ginzburg-Landau coherence length ξ(0), normal-state electron diffusion coefficient D_e, magnetic penetration depth λ(0), and superconducting energy gap Δ(0), on film thickness is systematically investigated. Compared with amorphous tungsten silicide (WSi) and molybdenum germanide (MoGe) superconducting thin films, WGe alloys and WSi have similar superconducting properties, including critical temperature and coherence length, slightly lower normal-state electron diffusion coefficient and higher magnetic penetration depth. Compared with MoGe, both WGe and WSi alloys exhibit larger normal-state electron diffusion coefficient and higher magnetic penetration depths. By studying the superconducting properties of three different amorphous thin films, this research provides new material choices and experimental evidence for developing and optimizing the performance of large-area, high-sensitivity superconducting nanowire single-photon detectors.

Keywords:

Authors and contacts

1.
School of Microelectronics, Shanghai University, Shanghai 201800, China
2.
Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

Corresponding author: ZHANG Xiaofu, zhangxf@mail.sim.ac.cn

Funds: Project supported by the Science and Technology Innovation 2030-Innovation Program for Quantum Science and Technology (Grant No. 2023ZD0300100).

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References

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[3]	Shibata H, Fukao K, Kirigane N, Karimoto S, Yamamoto H 2017 IEEE Trans. Appl. Supercond. 27 2200504 Google Scholar
[4]	Zhang W J, Huang J, Zhang C J, You L X, Lv C L, Zhang L, Li H, Wang Z, Xie X M 2019 IEEE Trans. Appl. Supercond. 29 2200204 Google Scholar
[5]	Chen J P, Zhang C, Liu Y, Jiang C, Zhang W J, Han Z Y, Ma S Z, Hu X L, Li Y H, Liu H, Zhou F, Jiang H F, Chen T Y, Li H, You L X, Wang Z, Wang X B, Zhang Q, Pan J W 2021 Nat. Photonics 15 570 Google Scholar
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[17]	Tanner M G, Natarajan C M, Pottapenjara V K, O'Connor J A, Warburton R J, Hadfield R H, Baek B, Nam S, Dorenbos S N, Ureña E B, Zijlstra T, Klapwijk T M, Zwiller V 2010 Appl. Phys. Lett. 96 221109 Google Scholar
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[22]	Zhang X, Engel A, Wang Q, Schilling A, Semenov A, Sidorova M, Hübers H W, Charaev I, Ilin K, Siegel M 2016 Phys. Rev. B 94 174509 Google Scholar
[23]	Häussler M, Mikhailov M Y, Wolff M A, Schuck C 2020 APL Photonics 5 076106 Google Scholar
[24]	Baek B, Lita A E, Verma V, Nam S W 2011 Appl. Phys. Lett. 98 251105 Google Scholar
[25]	Wollman E E, Allmaras J P, Beyer A D, Korzh B, Runyan M C, Narváez L, Farr W H, Marsili F, Briggs R M, Miles G J, Shaw M D 2024 Opt. Express 32 48185 Google Scholar
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[27]	Zhang X F, Ma R Y, Guo Z M, Zhang C J, Chen D, Huan Q C, Huang J, Zhang X Y, Xiao Y, Yu H Q, Liu X Y, Li H, Wang Z, Xie X M, You L X 2023 Opt. Express 31 30650 Google Scholar
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[31]	Ercolano P, Zhang X, Pepe G P, You L 2025 Supercond. Sci. Technol. 38 015011 Google Scholar
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[33]	Zhang X F, Charaev I, Liu H L, Zhou T, Zhu D, Berggren K K, Schilling A 2021 Supercond. Sci. Technol. 34 095003 Google Scholar
[34]	Johnson W L, Tsuei C C, Raider S I, Laibowitz R B 1979 J. Appl. Phys. 50 4240 Google Scholar
[35]	Zhang X, Lita A E, Sidorova M, Verma V B, Wang Q, Nam S W, Semenov A, Schilling A 2018 Phys. Rev. B 97 174502 Google Scholar
[36]	Skocpol W J, Tinkham M 1975 Rep. Prog. Phys. 38 1049 Google Scholar
[37]	Zhang X F, Lita A E, Smirnov K, Liu H, Zhu D, Verma V B, Nam S W, Schilling A 2020 Phys. Rev. B 101 060508 Google Scholar
[38]	Zhang X F, Shu R, Liu H L, Elsukova A, Persson P O A, Schilling A, Von Rohr F O, Eklund P 2022 Commun. Phys. 5 282 Google Scholar
[39]	Helfand E, Werthamer N R 1966 Phys. Rev. 147 288 Google Scholar
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Cited By

图 1 零磁场下非晶薄膜WGe (a), WSi (b), MoGe (c)超导转变的厚度依赖关系; (d) WGe, WSi和MoGe薄膜的临界温度的厚度依赖性

Figure 1. Thickness dependence of normal to superconducting transition for amorphous WGe (a), WSi (b), MoGe (c) films in absence of magnetic field; (d) the critical temperatures as functions of the film thickness for WGe, WSi and MoGe.

DownLoad: Full-Size Img PowerPoint

图 2 不同磁场下超导薄膜材料薄层电阻的温度依赖曲线　(a) 4 nm WGe; (b) 4 nm WSi; (c) 4 nm MoGe; (d) 100 nm WGe; (e) 100 nm WSi; (f) 100 nm MoGe

Figure 2. Temperature dependence of sheet resistance at different magnetic fields: (a) 4 nm WGe; (b) 4 nm WSi; (c) 4 nm MoGe; (d) 100 nm WGe; (e) 100 nm WSi; (f) 100 nm MoGe.

DownLoad: Full-Size Img PowerPoint

图 3 不同厚度WGe (a), WSi (b)和MoGe (c)薄膜临界磁场的温度依赖曲线(通过对温度依赖曲线的线性拟合, 提取出绝对零度上临界磁场B_c2(0))

Figure 3. Critical magnetic field of WGe (a), WSi (b), MoGe (c) films (points) of different thickness as a function of temperature. Through linear fitting of these temperature dependence, the absolute zero critical magnetic field B_c2(0) are extracted.

DownLoad: Full-Size Img PowerPoint

图 4 (a) 绝对零度下的GL相干长度ξ(0)与薄膜厚度的函数关系; (b) 正常态电子扩散系数D_e与薄膜厚度的函数关系; (c) 磁场穿透深度λ与薄膜厚度的函数关系

Figure 4. (a) The GL coherence length at absolute zero temperature ξ(0) as a function of film thickness; (b) thickness dependence of the diffusion constant of the electrons in the normal-conducting state; (c) the magnetic penetration depth λ(0) as a function of film thickness.

DownLoad: Full-Size Img PowerPoint

表 1 不同厚度WGe薄膜材料的超导物性参数

Table 1. Superconducting physical property parameters of the WGe film with different thicknesses.

样品	d/nm	R_sn/Ω	T_c/K	ξ(0)/nm	D_e/(cm²·s^–1)	Δ(0)/meV	λ(0)/nm
WGe	4	471.25	3.84	10.55	0.76	0.58	734
	5	371.80	4.00	10.13	0.74	0.61	714
	10	185.30	4.55	9.54	0.71	0.69	668
	50	37.09	4.85	8.17	0.53	0.74	647
	100	18.49	4.92	7.95	0.50	0.75	642

DownLoad: CSV

表 2 不同厚度WSi薄膜材料的超导物性参数

Table 2. Superconducting physical property parameters of the WSi film with different thicknesses.

样品	d/nm	R_sn/Ω	T_c/K	ξ(0)/nm	D_e/(cm²·s^–1)	Δ(0)/meV	λ(0)/nm
WSi	4	444.65	3.90	10.79	0.81	0.59	707
	5	354.90	4.12	10.48	0.80	0.63	687
	6	298.85	4.26	10.22	0.77	0.65	680
	8	221.84	4.44	9.80	0.73	0.67	662
	10	176.25	4.61	9.51	0.70	0.70	648
	20	88.31	4.81	9.19	0.68	0.73	635
	30	57.95	4.87	8.83	0.62	0.74	626
	50	35.47	4.91	8.48	0.57	0.75	630
	100	17.65	4.94	8.27	0.55	0.75	626

DownLoad: CSV

表 3 不同厚度MoGe薄膜材料的超导物性参数

Table 3. Superconducting physical property parameters of the MoGe film with different thicknesses.

样品	d/nm	R_sn/Ω	T_c/K	ξ(0)/nm	D_e/(cm²·s^–1)	Δ(0)/meV	λ(0)/nm
MoGe	4	378.75	5.31	8.14	0.62	0.81	560
	5	298.30	5.96	7.66	0.60	0.91	524
	8	186.59	6.37	7.42	0.60	0.97	507
	10	148.76	6.61	7.25	0.59	1.00	497
	20	74.15	7.03	6.73	0.53	1.07	481
	30	49.12	7.14	6.54	0.50	1.09	476
	100	14.52	7.28	6.18	0.46	1.11	468

DownLoad: CSV

[1]	Chang J, Los J W N, Tenorio-Pearl J O, Noordzij N, Gourgues R, Guardiani A, Zichi J R, Pereira S F, Urbach H P, Zwiller V, Dorenbos S N, Esmaeil Zadeh I 2021 APL Photonics 6 036114 Google Scholar
[2]	Korzh B, Zhao Q Y, Allmaras J P, Frasca S, Autry T M, Bersin E A, Beyer A D, Briggs R M, Bumble B, Colangelo M, Crouch G M, Dane A E, Gerrits T, Lita A E, Marsili F, Moody G, Peña C, Ramirez E, Rezac J D, Sinclair N, Stevens M J, Velasco A E, Verma V B, Wollman E E, Xie S, Zhu D, Hale P D, Spiropulu M, Silverman K L, Mirin R P, Nam S W, Kozorezov A G, Shaw M D, Berggren K K 2020 Nat. Photonics 14 250 Google Scholar
[3]	Shibata H, Fukao K, Kirigane N, Karimoto S, Yamamoto H 2017 IEEE Trans. Appl. Supercond. 27 2200504 Google Scholar
[4]	Zhang W J, Huang J, Zhang C J, You L X, Lv C L, Zhang L, Li H, Wang Z, Xie X M 2019 IEEE Trans. Appl. Supercond. 29 2200204 Google Scholar
[5]	Chen J P, Zhang C, Liu Y, Jiang C, Zhang W J, Han Z Y, Ma S Z, Hu X L, Li Y H, Liu H, Zhou F, Jiang H F, Chen T Y, Li H, You L X, Wang Z, Wang X B, Zhang Q, Pan J W 2021 Nat. Photonics 15 570 Google Scholar
[6]	Khatri F I, Robinson B S, Semprucci M D, Boroson D M 2015 Acta Astronaut. 111 77 Google Scholar
[7]	Zhang B, Guan Y Q, Xia L H, Dong D X, Chen Q, Xu C, Wu C, Huang H X, Zhang L B, Kang L, Chen J, Wu P H 2021 Supercond. Sci. Technol. 34 034005 Google Scholar
[8]	Taylor G G, Morozov D, Gemmell N R, Erotokritou K, Miki S, Terai H, Hadfield R H 2019 Opt. Express 27 38147 Google Scholar
[9]	Gol'tsman G N, Okunev O, Chulkova G, Lipatov A, Semenov A, Smirnov K, Voronov B, Dzardanov A, Williams C, Sobolewski R 2001 Appl. Phys. Lett. 79 705 Google Scholar
[10]	张彪, 陈奇, 管焰秋, 靳飞飞, 王昊, 张蜡宝, 涂学凑, 赵清源, 贾小氢, 康琳, 陈健, 吴培亨 2021 物理学报 70 198501 Google Scholar Zhang B, Chen Q, Guan Y Q, Jin F F, Wang H, Zhang L B, Tu X C, Zhao Q Y, Jia X Q, Kang L, Chen J, Wu P H 2021 Acta Phys. Sin. 70 198501 Google Scholar
[11]	Verma V B, Korzh B, Walter A B, Lita A E, Briggs R M, Colangelo M, Zhai Y, Wollman E E, Beyer A D, Allmaras J P, Vora H, Zhu D, Schmidt E, Kozorezov A G, Berggren K K, Mirin R P, Nam S W, Shaw M D 2021 APL Photonics 6 056101 Google Scholar
[12]	Chen L, Schwarzer D, Lau J A, Verma V B, Stevens M J, Marsili F, Mirin R P, Nam S W, Wodtke A M 2018 Opt. Express 26 14859 Google Scholar
[13]	尤立星 2018 红外与激光工程 47 1202001 Google Scholar You L X 2018 Infrared Laser Eng. 47 1202001 Google Scholar
[14]	Miki S, Takeda M, Fujiwara M, Sasaki M, Otomo A, Wang Z 2009 Appl. Phys. Lett. 2 075002 Google Scholar
[15]	Sun R, Makise K, Zhang L, Terai H, Wang Z 2016 AIP Adv. 6 065119 Google Scholar
[16]	Cheng R S, Wang S H, Tang H X 2019 Appl. Phys. Lett. 115 241101 Google Scholar
[17]	Tanner M G, Natarajan C M, Pottapenjara V K, O'Connor J A, Warburton R J, Hadfield R H, Baek B, Nam S, Dorenbos S N, Ureña E B, Zijlstra T, Klapwijk T M, Zwiller V 2010 Appl. Phys. Lett. 96 221109 Google Scholar
[18]	Dorenbos S N, Reiger E M, Perinetti U, Zwiller V, Zijlstra T, Klapwijk T M 2008 Appl. Phys. Lett. 93 131101 Google Scholar
[19]	Marsili F, Verma V B, Stern J A, Harrington S, Lita A E, Gerrits T, Vayshenker I, Baek B, Shaw M D, Mirin R P, Nam S W 2013 Nat. Photonics 7 210 Google Scholar
[20]	Verma V B, Marsili F, Harrington S, Lita A E, Mirin R P, Nam S W 2012 Appl. Phys. Lett. 101 251114 Google Scholar
[21]	Verma V B, Lita A E, Vissers M R, Marsili F, Pappas D P, Mirin R P, Nam S W 2014 Appl. Phys. Lett. 105 022602 Google Scholar
[22]	Zhang X, Engel A, Wang Q, Schilling A, Semenov A, Sidorova M, Hübers H W, Charaev I, Ilin K, Siegel M 2016 Phys. Rev. B 94 174509 Google Scholar
[23]	Häussler M, Mikhailov M Y, Wolff M A, Schuck C 2020 APL Photonics 5 076106 Google Scholar
[24]	Baek B, Lita A E, Verma V, Nam S W 2011 Appl. Phys. Lett. 98 251105 Google Scholar
[25]	Wollman E E, Allmaras J P, Beyer A D, Korzh B, Runyan M C, Narváez L, Farr W H, Marsili F, Briggs R M, Miles G J, Shaw M D 2024 Opt. Express 32 48185 Google Scholar
[26]	Verma V B, Korzh B, Bussières F, Horansky R D, Dyer S D, Lita A E, Vayshenker I, Marsili F, Shaw M D, Zbinden H, Mirin R P, Nam S W 2015 Opt. Express 23 33792 Google Scholar
[27]	Zhang X F, Ma R Y, Guo Z M, Zhang C J, Chen D, Huan Q C, Huang J, Zhang X Y, Xiao Y, Yu H Q, Liu X Y, Li H, Wang Z, Xie X M, You L X 2023 Opt. Express 31 30650 Google Scholar
[28]	Ma R, Guo Z, Chen D, Dai X, Xiao Y, Zhang C, Xiong J, Huang J, Zhang X, Liu X, Rong L, Li H, Zhang X, You L 2025 Adv. Photonics Nexus 4 026003 Google Scholar
[29]	Banerjee A, Baker L J, Doye A, Nord M, Heath R M, Erotokritou K, Bosworth D, Barber Z H, MacLaren I, Hadfield R H 2017 Supercond. Sci. Technol. 30 084010 Google Scholar
[30]	Wollman E E, Verma V B, Beyer A D, Briggs R M, Korzh B, Allmaras J P, Marsili F, Lita A E, Mirin R P, Nam S W, Shaw M D 2017 Opt. Express 25 26792 Google Scholar
[31]	Ercolano P, Zhang X, Pepe G P, You L 2025 Supercond. Sci. Technol. 38 015011 Google Scholar
[32]	Yang S J, Chen Y, Sun L M, Zhou H, Li Y M, Huang J, Zheng X Q, Ma R Y, Xiong J M, Wan Z, Liu X Y, Li H, Zheng J H, Peng W, Zhang X F, You L X 2025 Appl. Phys. Lett. 126 162601 Google Scholar
[33]	Zhang X F, Charaev I, Liu H L, Zhou T, Zhu D, Berggren K K, Schilling A 2021 Supercond. Sci. Technol. 34 095003 Google Scholar
[34]	Johnson W L, Tsuei C C, Raider S I, Laibowitz R B 1979 J. Appl. Phys. 50 4240 Google Scholar
[35]	Zhang X, Lita A E, Sidorova M, Verma V B, Wang Q, Nam S W, Semenov A, Schilling A 2018 Phys. Rev. B 97 174502 Google Scholar
[36]	Skocpol W J, Tinkham M 1975 Rep. Prog. Phys. 38 1049 Google Scholar
[37]	Zhang X F, Lita A E, Smirnov K, Liu H, Zhu D, Verma V B, Nam S W, Schilling A 2020 Phys. Rev. B 101 060508 Google Scholar
[38]	Zhang X F, Shu R, Liu H L, Elsukova A, Persson P O A, Schilling A, Von Rohr F O, Eklund P 2022 Commun. Phys. 5 282 Google Scholar
[39]	Helfand E, Werthamer N R 1966 Phys. Rev. 147 288 Google Scholar
[40]	Zhang X F, Huan Q C, Ma R Y, Zhang X Y, Huang J, Liu X Y, Peng W, Li H, Wang Z, Xie X M, You L X 2024 Adv. Quantum Technol. 7 2300378 Google Scholar
[41]	Meissner W, Ochsenfeld R 1933 Naturwissenschaften 21 787 Google Scholar
[42]	London H, London F 1935 Proc. R. Soc. London, Ser. A 149 71 Google Scholar
[43]	Tinkham M, Emery V 1996 Phys. Today 49 74 Google Scholar
[44]	Bardeen J, Cooper L N, Schrieffer J R 1957 Phys. Rev. 108 1175 Google Scholar
[45]	Zotova A N, Vodolazov D Y 2012 Phys. Rev. B 85 024509 Google Scholar

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Vol. 74, Issue 18 - 2025-09-20

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