A semiempirical model for kink effect on the AlGaN/GaN high electron mobility transistor
Acta Physica Sinica
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Acta Phys. Sin  2012, Vol. 61 Issue (4): 047301     doi:10.7498/aps.61.047301
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Archive| Adv Search  |   
A semiempirical model for kink effect on the AlGaN/GaN high electron mobility transistor
Ma Ji-Gang1 2, Ma Xiao-Hua1 2, Zhang Hui-Long1 2, Cao Meng-Yi2, Zhang Kai2, Li Wen-Wen2, Guo Xing2, Liao Xue-Yang2, Chen Wei-Wei1 2, Hao Yue2
1. School of Technical Physics, Xidian University, Xi’an 710071, China;
2. Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an 710071, China
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