高电子迁移率晶格匹配InAlN/GaN材料研究

张金风; 王平亚; 薛军帅; 周勇波; 张进成; 郝跃

doi:10.7498/aps.60.117305

摘要

文章基于蓝宝石衬底采用脉冲金属有机物化学气相淀积(MOCVD)法生长的高迁移率InAlN/GaN材料,其霍尔迁移率在室温和77 K下分别达到949和2032 cm2/Vs,材料中形成了二维电子气(2DEG). 进一步引入1.2 nm的AlN界面插入层形成InAlN/AlN/GaN结构,则霍尔迁移率在室温和77 K下分别上升到1437和5308 cm2/Vs. 分析样品的X射线衍射、原子力显微镜测试结果以及脉冲MOCVD生长方法的特点,发现InAlN/GaN材料的结晶质量较高,与GaN晶格匹配的InAlN材料具有平滑的表面和界面. InAlN/GaN和InAlN/AlN/GaN材料形成高迁移率特性的主要原因归结为形成了密度相对较低(1.610131.81013 cm-2)的2DEG,高质量的InAlN晶体降低了组分不均匀分布引起的合金无序散射,以及2DEG所在界面的粗糙度较小,削弱了界面粗糙度散射.

关键词:

Abstract

InAlN can be in-plane lattice matched (LM) to GaN, and the formed InAlN/GaN heterostructure is one kind of materials with high conductivity to be used in GaN-based high electron mobility transistors (HEMTs). It is reported that the high-mobility InAlN/GaN material is grown by using pulsed metal organic chemical vapor deposition (PMOCVD) on sapphire, and the Hall electron mobility reaches 949 and 2032 cm2/Vs at room temperature and 77 K, respectively. The two-dimensional electron gas (2DEG) is formed in the sample. When 1.2 nm thick AlN space layer is inserted to form InAlN/AlN/GaN structure, the Hall electron mobility increases to 1437 and 5308 cm2/Vs at room temperature and 77 K, respectively. It is shown by analyzing the results of X-ray diffraction and atomic force microscopy and the features of PMOCVD that the crystal quality of InAlN/GaN material is quite high, and the InAlN layer LM to GaN has smooth surface and interface. The high mobility characteristics of InAlN/GaN and InAlN/AlN/GaN materials are ascribed to the fact that the 2DEG has a comparatively low sheet density (1.61013-1.81013 cm-2), the alloy disorder scattering is weakened in the high-quality InAlN crystal since its compositions are evenly distributed, and the interface roughness scattering is alleviated at the smooth interface where the 2DEG is located.

Keywords:

InAlN/GaN /
pulsed metal organic chemical vapor deposition /
two-dimensional electron gas /
mobility

作者及机构信息

1.
宽禁带半导体材料与器件重点实验室,西安电子科技大学微电子学院,西安 710071

基金项目: 国家重大科学研究计划(批准号: 2008ZX01002-002)、国家自然科学基金重大项目(批准号: 60890191)、国家自然科学基金重点项目(批准号: 60736033)和高等学校博士学科点新教师基金项目(批准号: 200807011012)资助的课题.

Authors and contacts

1.
Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China

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施引文献

[1]	Kuzmik J, Pozzovivo G, Ostermaier C, Strasser G, Pogany D, Gornik E, Carlin J F, Gonschorek M, Feltin E, Grandjean N 2009 J. Appl. Phys. 106 124503
[2]	Li R F, Yang R X, Wu Y B, Zhang Z G, Xu N Y, Ma Y Q 2008 Acta Phys. Sin. 57 2450 (in Chinese) [李若凡、杨瑞霞、武一宾、张志国、许娜颖、马永强 2008 物理学报 57 2450]
[3]
[4]
[5]	Kuzmik J 2001 IEEE Electron. Dev. Lett. 22 510
[6]
[7]	Gonschorek M, Carlin J F, Feltin E, Py M A, Grandjean N 2006 Appl. Phys. Lett. 89 062106
[8]
[9]	Katz O, Mistele D, Meyler B, Bahir G, J. Salzman 2004 Electron. Lett. 40 1304
[10]
[11]	Karpov S Y, Podolskaya N, Zhmakin I A, Zhmakin A I 2004 Phys. Rev. B 70 235203
[12]
[13]	Ferhat M, Bechstedt F 2002 Phys. Rev. B 65 075213
[14]	Kuzmik J, Carlin J F, Gonschorek M, Kostopoulos A, Konstantinidis G, Pozzovivo G, Golka S, Georgakilas A, Grandjean N, Strasser G, Pogany D, 2007 Phys. Stat. Sol. (a) 204 2019
[15]
[16]
[17]	Xie J Q, Ni X F, Wu M, Leach J H, zgr V, Morko H 2007 Appl. Phys. Lett. 91 132116
[18]
[19]	Miyoshi M, Kuraoka Y, Tanaka M, Egawa T 2008 Appl. Phys. Express 1 081102
[20]
[21]	Tlek R, Ilgaz A, Gkden S, Teke A, ztrk M K, Kasap M, zelik S, Arslan E, zbay E 2009 J. Appl. Phys. 105 013707
[22]	Ni J Y, Hao Y, Zhang J C, Duan H T, Zhang J F 2009 Acta Phys. Sin. 58 4925 (in Chinese) [倪金玉、郝跃、张进成、段焕涛、张金风 2009 物理学报 58 4925]
[23]
[24]
[25]	Xue J S, Hao Y, Zhou X W, Zhang J C, Yang C K, Ou X X, Shi L Y, Wang H, Yang L A, Zhang J F 2011 J. Cryst. Growth 314 359
[26]
[27]	Shur M, Gelmont B, Khan M A 1996 J. Electron. Mater. 25 777
[28]	Liu B, Yin J Y, Li J, Feng Z H, Feng Z, Cai S J 2008 Proceedings of 15th National Conferance on Compound Semiconductor Materials, Microwave Devices and Optoelectronic Derices, Guangzhou, p54 (in Chinese) [刘波、尹甲运、李佳、冯志宏、冯震、蔡树军 2008 第十五届全国化合物半导体、微波器件和光电器件学术会议论文集广州第54页]
[29]
[30]
[31]	Jeganathan K, Shimizu M, Okumura H, Yano Y, Akutsu N 2007 J. Cryst. Growth 304 342
[32]
[33]	Dadgar A, Schulze F, Blsing J, Diez A, Krost A, Neuburger M, Kohn E, Daumiller I, Kunze M 2004 Appl. Phys. Lett. 85 5400
[34]	Yu L S 2006 Physics of Semiconductor Heterojunctions (2nd Edition) (Beijing: Science Press) p141 (in Chinese) [虞丽生 2006 半导体异质结物理(第二版) (北京: 科学出版社) 第141页]
[35]
[36]	Jena D, Smorchkova I, Gossard A C, Mishra U K 2001 Phys. Stat. Sol. (b) 228 617
[37]
[38]	Antoszewski J, Gracey M, Dell J M, Faraone L, Fisher T A, Parish G, Wu Y F, Mishra U K 2000 J. Appl. Phys. 87 3900
[39]
[40]	Angerer H, Brunner D, Freudenberg F, Ambacher O, Stutzmann M 1997 Appl. Phys. Lett. 71 1504
[41]
[42]	Bastard G 1983 Appl. Phys. Lett. 43 591
[43]
[44]
[45]	Ferry D K, Goodnick S M 1999 Transport in Nanostructures (Cambridge: Cambridge University Press)
[46]
[47]	Zhang J F, Mao W, Zhang J C, Hao Y 2008 Chin. Phys. B 17 2689

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