[1] Balducci A, Marinelli M, Milani E, Morgada M E, Tucciarone A,Verona-Rinati G, Angelone M, Pillon M 2005 Appl. Phys. Lett.86 193509
[2] Liao M, Koide Y 2006 Appl. Phys. Lett. 89 113509
[3] Liao M, Alvarez J, Imura M, Koide Y 2007 Appl. Phys. Lett. 91163510
[4] Abbaschian R, Zhu H, Clarke C 2005 Diamond Relat. Mater. 141916
[5] Wang L J, Liu J M, Su Q S, Shi W M, Xia Y B 2006 Acta Phys.Sin. 55 2518(in Chinese)[ 王林军,刘健敏,苏青峰,史伟民,夏义本2006 物理学报 55 2518]
[6] Chan S S, McKeag R D, Whitfield M D, Jackman R B 1996 Phys.Stat. Sol. A 154 445
[7] Salvatori S, Rossi M C, Galluzzi F2000 IEEE Trans. Electr. Dev.47 1334
[8] Pace E, Di Benedetto R, Scuderi S 2000 Diamond Relat. Mater. 9987
[9] Li X H, Guo W T, Chen X K, Wu G, Yang J P, Wang R, Cao S Z,Yu R 2007 Acta Phys. Sin. 56 7183(in Chinese)[李晓红,郭晚土,陈学康,吴敢,杨建平,王瑞,曹生珠,余荣 2007 物理学报 56 7183]
[10] Jiang W, Ahn J, Xu F L, Liaw C Y, Chan Y C, Zhou Y, Lam Y L1998 Appl. Phys. Lett. 72 1131
[11] Chen G H, Zhang X W, Ji Y Y, Yan H 1997 Acta Phys. Sin. 461188(in Chinese)[陈光华,张兴旺,季亚英,严辉 1997 物理学报 46 1188]
[12] Ashfold M N R, May P W, Rego C A, Everitt N M 1994 Chem.Soc. Rev. 23 21
[13] Xia Y, Sekiguchi T, Zhang W, Jiang X, Wu W, Yao T 2000 J.Cryst. Growth 213 328
[14] Liu E K, Zhu B S, Luo J S 2003 Physics of Semiconductor(6thEd)(Beijing: Publishing House of Electronics Industry)pp159–364(in Chinese)[刘恩科,朱秉升,罗晋升 2003 半导体物理学(第6版)(北京:电子工业出版社)第159–364页]
[15] Polyakov V I, Rukovishnikov A I, Rossukanyi N M, Ralchenko VG 2001 Diamond Relat. Mater. 10 593
[16] Sze S M, Ng K K 2006 Physics of Semiconductor Devices(3thEd)(Hoboken: John Wiley & Sons)pp42–789
[17] Polyakov V I, Rukovishnikov A I, Rossukanyi N M, PereverzevV G, Pimenov S M, Carlisle J A, Gruen D M, Loubnin E N 2003Diamond Relat. Mater. 12 1776
[18] Zhang Z H, Zhao D G, Sun Y P, Feng Z H, Shen X M, Zhang BS, Feng G, Zheng X H, Yang H 2003 Chin. J. Semicond. 24 34(inChinese)[张泽洪,赵德刚,孙元平,冯志宏,沈晓明,张宝顺,冯淦,郑新和,杨辉 2003 半导体学报 24 34]
[19] Chen H M, Chen Y F, Lee M C, Feng M S 1997 Phys. Rev. B 566942
[20] Reddy C V, Balakrishnan K, Okumura H, Yoshida S 1998 Appl.Phys. Lett. 73 244
[21] De Sio A, Achard J, Tallaire A, Sussmann R S, Collins A T, SilvaF, Pace E 2005 Appl. Phys. Lett. 86 213504