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摘要: 用同步辐射光电子能谱测量了Si/ZnS(111)及(100)异质结的价带偏移ΔEv.对于Si/ZnS(111)及(100)两界面,ΔEv的实验结果均为(1.9±0.1)eV,与已有理论预期值相当符合,但与Maierhofer所报告的ZnS/Si(111)异质结测量结果之间则存在明显差别.该实验结果表明对于Si/ZnS极性界面,互逆性规则(commutativity rule)可能不成立,就此进行了讨论.
Abstract: Synchrotron radiation photoelectron spectroscopy is used to measure the valence-band offsets for Si/ZnS(111) and (100) heterojunctions. The valence band discontinuities obtained from the measurements are both (1.9±0.1)eV for Si/ZnS(111) and Si/ZnS(100) interfaces,which is in excellent agreement with the theoretical predictions but considerably different from the experimental- result of ZnS/Si(111) reported by Maierhofer et al. This suggests that the commutativity rule of- band offset may not be valid for Si/ZnS polar interface and the reason is discussed.