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物理学报. 1997, 46(9): 1817-1825.
doi: 10.7498/aps.46.1817.
Si/ZnS极性界面能带偏移的同步辐射光电子能谱研究
- 收稿日期: 1997-01-28
- 刊出日期: 1997-09-20
摘要: 用同步辐射光电子能谱测量了Si/ZnS（111）及（100）异质结的价带偏移ΔEv．对于Si/ZnS（111）及（100）两界面，ΔEv的实验结果均为（1.9±0.1）eV，与已有理论预期值相当符合，但与Maierhofer所报告的ZnS/Si（111）异质结测量结果之间则存在明显差别．该实验结果表明对于Si/ZnS极性界面，互逆性规则（commutativity rule）可能不成立，就此进行了讨论．
English Abstract
VALENCE BAND OFFSETS OF Si/ZnS POLAR INTERFACES: A SYNCHROTRON RADIATION PHOTOEMISSION STUDY
- Received Date:
28 January 1997
- Published Online:
20 September 1997
Abstract: Synchrotron radiation photoelectron spectroscopy is used to measure the valence-band offsets for Si/ZnS(111) and (100) heterojunctions. The valence band discontinuities obtained from the measurements are both (1.9±0.1)eV for Si/ZnS(111) and Si/ZnS(100) interfaces,which is in excellent agreement with the theoretical predictions but considerably different from the experimental- result of ZnS/Si(111) reported by Maierhofer et al. This suggests that the commutativity rule of- band offset may not be valid for Si/ZnS polar interface and the reason is discussed.
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