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物理学报. 1997, 46(4): 740-746.
doi: 10.7498/aps.46.740.
p型GexSi1-x/Si多量子阱的红外吸收及其分析
- 收稿日期: 1996-05-30
- 刊出日期: 1997-04-20
摘要: 通过测量GeSi多量子阱的红外谱，同时观察到了相应于量子阱内重空穴基态HH1到重空穴激发态HH1、轻空穴激发态LH1和自旋分裂带SO及连续态间的跃迁吸收．测量了GeSi多量子阱探测器的正入射光电流谱，看到了明显的光响应峰．理论计算中计及了轻、重和自旋分裂带间的耦合及能带的非抛物性，并自洽考虑了哈特里势和交换相关势．与实验结果比较，认为带之间的耦合，使子带间的跃迁情况变得复杂，是正入射吸收产生的原因
English Abstract
INTERSUBBAND ABSORPTION IN p-TYPE GexSi1-x/Si MULTIPLE QUANTUM WELLS AND ITS ANALYSIS
- Received Date:
30 May 1996
- Published Online:
20 April 1997
Abstract: A theoretical and experimental study of intersubband absorption in p-type GexSi1-x/Si multiple quantum wells are presented,the calculations are performed with envelop-function approach,with full inclusion of the degeneracy and warping of the three topmost bulk valence bands described by the strain-dependent Luttinger-Kohn Hamiltonian.The Hartree potential and the exchange correlation interaction are taken into account in a self-consistent manner.And finally the absorption spectra is calculated.We contribute some absoptions observed with normal incident unpolarized infra-beam to the band-mixing of heavy,light and split-off bands in GexSi1-x/Si quantum wells.
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