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本文提出了流体-化学动理学二维正电晕放电混合模型, 该模型包含12种粒子间的27种化学反应, 并且考虑光电离的影响. 此外, 在实验室内对该模型开展试验验证, 单次脉冲波形及伏安特性曲线符合较好. 基于上述模型, 本文研究了在外施电压3 kV时棒-板电极正电晕放电过程中的电场分布、电子温度分布、 空间电荷分布的发展规律, 并对电晕放电过程中粒子的成分进行了详细分析, 讨论了电子、正负离子、中性粒子在放电过程中的生成规律及对电晕放电的影响. 结果表明: 在整个电晕放电过程中, 电子温度分布和电场强度分布曲线相似, 电子密度维持在1019 m-3左右, 只发现带正电的等离子体特征. O4+密度是放电过程中数量最多的正离子, O2+和N2+在二次电子发射过程中具有重要作用, O2- 离子和O分别是负离子和中性粒子中数量最多的粒子, 由于负离子和中性粒子在电晕放电过程中数量较小, 因而起的作用相对较小.
[1] Yang B C, Liu X B, Dai Y S 2002 High Voltage Engineering (Chongqing: Chongqing University Press) (in Chinese) [杨保初, 刘晓波, 戴玉松 2002 高电压技术 (重庆: 重庆大学出版社) ]
[2] Liu Z Y 2005 Ultra-Hig Grid (Beijing: China Economic Publishig) (in Chinese) [刘振亚 2005 特高压电网 (北京: 中国经济出版社)]
[3] Shu Y B, Hu Y 2007 Proceedings of the CSEE 27 1 (in Chinese) [舒印彪, 胡毅 2007 中国电机工程学报 27 1]
[4] Zheng Y S He J L, Zhang B 2011 High Voltage Engineering 3 752 (in Chinese) [郑跃胜, 何金良, 张波 2011 高电压技术 3 752]
[5] Qiu C R, Wang N Q 1994 Electrical Equipment Partial Discharge and Testing Technology (Beijing: China Machine Press) (in Chinese) [邱昌容, 王乃庆 1994 电工设备局部放电及其测试技术 (北京: 机械工业出版社) ]
[6] Bai X Y, Bai M D, Zhang Z T 2003 China Basic Science 6 30 (in Chinese) [白希尧, 白敏冬, 张芝涛 2003 中国基础科学 6 30]
[7] Michael A L Allan J L 2007 Plasma Discharge Principle and Materials Processing (Beijing: Science Press) (in Chinese) [迈克尔 A 力伯曼, 阿伦 J 里登伯格 2007 等离子体放电原理与材料处理 (北京: 科学出版社)]
[8] Hu Q, Shu L C, Jiang X L 2010 High Voltage Engineering 36 1669 (in Chinese) [胡琴, 舒立春, 蒋兴良 2010 高电压技术 36 1669]
[9] Liu Y P You S H, Lv F C 2010 High Voltage Engineering 36 2424 (in Chinese) [胡琴, 舒立春, 蒋兴良 2010 高电压技术 36 2424]
[10] Davies A J, Davies C S, Evans C J 1971 Proc. Inst. Electrical Eng. 118 816
[11] Passchier J D P Goedheer W J 1993 J. Appl. Phys. 73 1073
[12] Lymberopoulos D P, Economou D J 1993 J. Appl. Phys. 73 3668
[13] Lymberopoulos D P, Economou D J 1993 Appl. Phys. Lett. 63 2478
[14] Bera K, Farouk B, Lee Y H 1998 JSME International Journal 41 132
[15] Bera K, Farouk B, Lee Y H 1999 Plasma Sources Sci. Technol. 8 412
[16] Bera K, Farouk B, Lee Y H 1999 J. Electrochem. Soc. 146 3264
[17] Bera K, Farouk B, Vitello P 2001 J. Phys. D: Appl. Phys. 34 1479
[18] Agostino R D, Favia P, Oehr C Wertheimer M R 2005 Plasma Processes and Polymers 2 7
[19] Gordiets B F, Ferreira C M Guerra V L Loureiro J M A H Nahomy J 1995 IEEE Trans. Plasma Sci. 23 750
[20] Nahomy J, Ferreira C M, Gordiets B, Pagnon D, Touzeau M,Vialle M 2010 J. Phys. D: Appl. Phys 107 093304
[21] Zhang J, Adamiak K 2008 IEEE Trans. Ind. Appl. 44 494
[22] Hagelaar G J M Pitchford L C 2005 Plasma Sources Sci. Technol. 14 722
[23] Zheleznyak M D, Mnattskanyan A K 1977 Zhurnal Tekhnicheskoi Fiziki 47 2497
[24] Yu V S, Larsson A, Gubanski S M, Akyuz M 2001 J. Phys. D: Appl. Phys. 34 614
[25] Philip D N, Janzen A R, Aziz R A 1972 J. Chem. Phys. 57 1100
[26] Brokaw R S 1969 Ind. Eng. Chem. Process Des. 8 240
[27] Bird R B, Stewart W E, Lightfoot E N 1960 Transport Phenomena (Madison: Madison Press)
[28] Farouk T, Farouk B, Gutsol A, Fridman A 2008 Plasma Sources Sci. Technol. 17 035015
[29] Curtiss C F, Bird R B 1999 Ind. Eng. Chem. Res. 38 2515
[30] Xu X J, Zhu D C 1996 Air Discharge Physical (Shanghai: Fudan University Press) (in Chinese) [徐学基, 诸定昌 1996 空气放电物理 (上海: 复旦大学出版社)]
[31] Yao P L 1994 Plasma Physics (Beijing: Science Press) (in Chinese) [姚平录 1994 等离子体物理学 (北京: 科学出版社)]
[32] Gordiets B F, Ferreira C M, Guerra V L, Louriero M 1995 IEEE Trans. Plasma Sci. 23 750
[33] Mahadev S, Raja L L 2010 J. Appl. Phys. 107 093304
[34] Liu X H, He W, Yang F, Xiao H G,Ma J 2011 High Voltage Engineering 37 1614 (in Chinese) [刘兴华, 何为, 杨帆, 肖汉光, 马俊 2011 高电压技术 37 1614]
[35] Tran T N, Golosnoy I O, Lewin P L, Georghiou G E 2009 IEEE Conf. on Electrical Insulation and Dielectric Phenomena Virginia USA, 2009 p559
[36] Tran T N, Golosnoy I O, Lewin P L, Georghiou G E 2011 J. Phys. D: Appl. Phys. 44 015203
[37] Li Q, Li H F, Sun X R, Zhang W Y, Wang H 2010 High Voltage Engineering 36 2739 (in Chinese) [李庆, 李海凤, 孙晓荣, 张文月, 王昊 2010 高电压技术 36 2739]
[38] Arkhipenko V I, Zgirovskii S M, Kirillov A A, Simonchick L V 2002 Plasma Phys. Rep. 28 858
[39] Marode E, Bastien F, Bakker M 1979 J. Appl. Phys. 50 140
[40] Sigmond R S 1984 J. Appl. Phys. 56 1355
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[1] Yang B C, Liu X B, Dai Y S 2002 High Voltage Engineering (Chongqing: Chongqing University Press) (in Chinese) [杨保初, 刘晓波, 戴玉松 2002 高电压技术 (重庆: 重庆大学出版社) ]
[2] Liu Z Y 2005 Ultra-Hig Grid (Beijing: China Economic Publishig) (in Chinese) [刘振亚 2005 特高压电网 (北京: 中国经济出版社)]
[3] Shu Y B, Hu Y 2007 Proceedings of the CSEE 27 1 (in Chinese) [舒印彪, 胡毅 2007 中国电机工程学报 27 1]
[4] Zheng Y S He J L, Zhang B 2011 High Voltage Engineering 3 752 (in Chinese) [郑跃胜, 何金良, 张波 2011 高电压技术 3 752]
[5] Qiu C R, Wang N Q 1994 Electrical Equipment Partial Discharge and Testing Technology (Beijing: China Machine Press) (in Chinese) [邱昌容, 王乃庆 1994 电工设备局部放电及其测试技术 (北京: 机械工业出版社) ]
[6] Bai X Y, Bai M D, Zhang Z T 2003 China Basic Science 6 30 (in Chinese) [白希尧, 白敏冬, 张芝涛 2003 中国基础科学 6 30]
[7] Michael A L Allan J L 2007 Plasma Discharge Principle and Materials Processing (Beijing: Science Press) (in Chinese) [迈克尔 A 力伯曼, 阿伦 J 里登伯格 2007 等离子体放电原理与材料处理 (北京: 科学出版社)]
[8] Hu Q, Shu L C, Jiang X L 2010 High Voltage Engineering 36 1669 (in Chinese) [胡琴, 舒立春, 蒋兴良 2010 高电压技术 36 1669]
[9] Liu Y P You S H, Lv F C 2010 High Voltage Engineering 36 2424 (in Chinese) [胡琴, 舒立春, 蒋兴良 2010 高电压技术 36 2424]
[10] Davies A J, Davies C S, Evans C J 1971 Proc. Inst. Electrical Eng. 118 816
[11] Passchier J D P Goedheer W J 1993 J. Appl. Phys. 73 1073
[12] Lymberopoulos D P, Economou D J 1993 J. Appl. Phys. 73 3668
[13] Lymberopoulos D P, Economou D J 1993 Appl. Phys. Lett. 63 2478
[14] Bera K, Farouk B, Lee Y H 1998 JSME International Journal 41 132
[15] Bera K, Farouk B, Lee Y H 1999 Plasma Sources Sci. Technol. 8 412
[16] Bera K, Farouk B, Lee Y H 1999 J. Electrochem. Soc. 146 3264
[17] Bera K, Farouk B, Vitello P 2001 J. Phys. D: Appl. Phys. 34 1479
[18] Agostino R D, Favia P, Oehr C Wertheimer M R 2005 Plasma Processes and Polymers 2 7
[19] Gordiets B F, Ferreira C M Guerra V L Loureiro J M A H Nahomy J 1995 IEEE Trans. Plasma Sci. 23 750
[20] Nahomy J, Ferreira C M, Gordiets B, Pagnon D, Touzeau M,Vialle M 2010 J. Phys. D: Appl. Phys 107 093304
[21] Zhang J, Adamiak K 2008 IEEE Trans. Ind. Appl. 44 494
[22] Hagelaar G J M Pitchford L C 2005 Plasma Sources Sci. Technol. 14 722
[23] Zheleznyak M D, Mnattskanyan A K 1977 Zhurnal Tekhnicheskoi Fiziki 47 2497
[24] Yu V S, Larsson A, Gubanski S M, Akyuz M 2001 J. Phys. D: Appl. Phys. 34 614
[25] Philip D N, Janzen A R, Aziz R A 1972 J. Chem. Phys. 57 1100
[26] Brokaw R S 1969 Ind. Eng. Chem. Process Des. 8 240
[27] Bird R B, Stewart W E, Lightfoot E N 1960 Transport Phenomena (Madison: Madison Press)
[28] Farouk T, Farouk B, Gutsol A, Fridman A 2008 Plasma Sources Sci. Technol. 17 035015
[29] Curtiss C F, Bird R B 1999 Ind. Eng. Chem. Res. 38 2515
[30] Xu X J, Zhu D C 1996 Air Discharge Physical (Shanghai: Fudan University Press) (in Chinese) [徐学基, 诸定昌 1996 空气放电物理 (上海: 复旦大学出版社)]
[31] Yao P L 1994 Plasma Physics (Beijing: Science Press) (in Chinese) [姚平录 1994 等离子体物理学 (北京: 科学出版社)]
[32] Gordiets B F, Ferreira C M, Guerra V L, Louriero M 1995 IEEE Trans. Plasma Sci. 23 750
[33] Mahadev S, Raja L L 2010 J. Appl. Phys. 107 093304
[34] Liu X H, He W, Yang F, Xiao H G,Ma J 2011 High Voltage Engineering 37 1614 (in Chinese) [刘兴华, 何为, 杨帆, 肖汉光, 马俊 2011 高电压技术 37 1614]
[35] Tran T N, Golosnoy I O, Lewin P L, Georghiou G E 2009 IEEE Conf. on Electrical Insulation and Dielectric Phenomena Virginia USA, 2009 p559
[36] Tran T N, Golosnoy I O, Lewin P L, Georghiou G E 2011 J. Phys. D: Appl. Phys. 44 015203
[37] Li Q, Li H F, Sun X R, Zhang W Y, Wang H 2010 High Voltage Engineering 36 2739 (in Chinese) [李庆, 李海凤, 孙晓荣, 张文月, 王昊 2010 高电压技术 36 2739]
[38] Arkhipenko V I, Zgirovskii S M, Kirillov A A, Simonchick L V 2002 Plasma Phys. Rep. 28 858
[39] Marode E, Bastien F, Bakker M 1979 J. Appl. Phys. 50 140
[40] Sigmond R S 1984 J. Appl. Phys. 56 1355
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