GaN HEMT栅边缘电容用于缺陷的研究

王鑫华; 庞磊; 陈晓娟; 袁婷婷; 罗卫军; 郑英奎; 魏珂; 刘新宇

doi:10.7498/aps.60.097101

摘要

本文对GaN HEMT栅漏电容的频率色散特性进行分析,认为栅边缘电容的色散是导致栅漏电容频率色散特性不同于圆肖特基二极管电容的主要原因. 通过对不同栅偏置条件下缺陷附加电容与频率关系的拟合,发现小栅压下的缺陷附加电容仅满足单能级缺陷模型,而强反向栅压下的缺陷附加电容同时满足单能级和连续能级缺陷模型. 实验中栅边缘电容的频率色散现象在钝化工艺后出现,其反映的缺陷很可能是钝化工艺引入,且位于源漏间栅金属未覆盖区域的表面. 最后通过低频噪声技术进一步验证栅边缘电容提取缺陷参数的可行性. 低频噪声技术获得的单能级

关键词:

HEMT /
边缘电容 /
缺陷 /
低频噪声

Abstract

The analysis of the frequency dispersion characteristics of the gate-drain capacitance of GaN HEMT indicates that the gate fringe capacitance is responsible for the dispersion difference between the gate-drain capacitance and circle Schottky diode. By fitting the relationship between the additional capacitance of trap and frequency, we discover that the additional capacitance of trap can meet single energy level model only under small gate bias, and meet both single and consecutive energy level model under strong reverse gate bias. The gate fringe capacitance dispersion appears after SiN passivation. It suggests that the trap observed by fringe capacitance is introduced by passivation, which lies in the surface of the ungated region between source and drain. Finally, the low frequency noise technology is used to validate the feasibility of abstracting trap parameter by the gate fringe capacitance. The time constant of single energy level trap obtained by low frequency noise technology is consistent with the result obtained by the gate fringe capacitance under strong reverse gate bias.

Keywords:

作者及机构信息

1.
中国科学院微电子研究所,微电子器件与集成技术重点实验室,北京 100029

基金项目: 国家重点基础研究发展计划(973)项目(批准号:2010CB327500)资助的课题.

Authors and contacts

1.
Key Laboratory of Microelectronics Device & Integrated Technology, Institute ofMicroelectronics of Chinese Academy of Sciences, Beijing 100029, China

参考文献

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[15]	Balandin A, Morozov S V, Cai S, Li R, Wang K L, Wijeratne G,Viswanathan C R 1999 IEEE Trans. Microw. Theory Tech. 47 1413
[16]	Rice A K,Malloy K J 2000 J. Appl. Phys. 87 7892
[17]	Bouya M, Malbert N, Labat N, Carisetti D, Perdu P, Clément J C, Lambert B,Bonnet M 2008 Microelectron. Reliab. 48 1366
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[19]	Kokorev M F,Maleev N A 1996 Solid State Electron. 39 297
[20]	Parvesh G, Sujata P, Subhasis H, Mridula G,Gupta R S 2007 Microelectron. J. 38 848
[21]	Gangwani P, Gupta M, Kaur R, Pandey S, Haldar S,Gupta R S Asia-Pacific Microwave Conference, Hong Kong, China, Dec 16—20 p1
[22]	Nicollian E H,Brews J R 1982 MOS (Metal Oxide Semiconductor) Physics and Technology (1st ed) (New York: Wiley Interscience) p928
[23]	Goetzberger E H N a A 1968 Microelectron. Reliab. 7
[24]	Hashizume T, Alekseev E, Pavlidis D, Boutros K S,Redwing J 2000 J. Appl. Phys. 88 1983
[25]	Balandin A, Morozov S, Wijeratne G, Cai S J, Li R, Li J, Wang K L, Viswanathan C R,Dubrovskii Y 1999 Appl. Phys. Lett. 75 2064
[26]	Rumyantsev S L, Pala N, Shur M S, Borovitskaya E, Dmitriev A P, Levinshtein M E, Gaska R, Khan M A, Jinwei Y, Xuhong H,Simin G 2001 IEEE Trans. Electron Devices 48 530
[27]	Levinshtein M E 15th International Conference on Noise in Physical Systems and 1/f Fluctuations Hong Kong,China, August 23—26 p213
[28]	Jones B K 1994 IEEE Trans. Electron Devices 41 2188
[29]	Vandamme L K J 1994 IEEE Trans. Electron Devices 41 2176

施引文献

[1]	Waltereit P, Bronner W, Kiefer R, Quay R, Kühn J, Van Raay F, Dammann M, Müller S, Libal C, Meier T, Mikulla M,Ambacher O 2010 CS MANTECH Conference Oregon Portland, USA, May 17th—20th, 2010 p137
[2]	Del Alamo J A,Joh J 2009 Microelectron. Reliab. 49 1200
[3]	Wang R X, Xu S J, Shi S L, Beling C D, Fung S, Zhao D G, Yang H,Tao X M 2006 Appl. Phys. Lett. 89 3
[4]	Burgaud P, Constancias L, Martel G, Savina C,Mesnager D 2007 Microelectron. Reliab. 47 1653
[5]	Chou Y C, Leung D, Smorchkova I, Wojtowicz M, Grundbacher R, Callejo L, Kan Q, Lai R, Liu P H, Eng D,Oki A 2004 Microelectron. Reliab. 44 1033
[6]	Park S Y, Floresca C, Chowdhury U, Jimenez J L, Lee C, Beam E, Saunier P, Balistreri T,Kim M J 2009 Microelectron. Reliab. 49 478
[7]	Dammann M, Pletschen W, Waltereit P, Bronner W, Quay R, Müller S, Mikulla M, Ambacher O, van der Wel P J, Murad S, Rödle T, Behtash R, Bourgeois F, Riepe K, Fagerlind M,Sveinbjörnsson E  2009 Microelectron. Reliab. 49 474
[8]	Vetury R, Zhang N Q Q, Keller S,Mishra U K 2001 IEEE Trans. Electron Devices 48 560
[9]	Conway A M, Chen M, Hashimoto P, Willadsen P J,Micovic M CS MANTECH Conference, Texas Austin, USA, May 14—17 p99
[10]	Liu W L, Chen Y L, Balandin A A,Wang K L 2006 J.Nanoelectron.Optoelectron. 1 258
[11]	Shealy J R,Brown R J 2008 Appl. Phys. Lett. 92 032101
[12]	Wang X H, Zhao M, Liu X Y, Pu Y, Zheng Y K,Wei K 2010 Chin. Phys. B 19 097302
[13]	Zhang J F, Wang C, Zhang J C,Hao Y 2006 Chin. Phys. 15 1060
[14]	Qian L, Jiangfeng D, Mohua Y, Shenghui L, Wei Z, Jianxin X,Qi Y 2000 the 8th International Conference on Solid-State and Integrated Circuit Technology Shanghai, China, Oct 23—26 p923
[15]	Balandin A, Morozov S V, Cai S, Li R, Wang K L, Wijeratne G,Viswanathan C R 1999 IEEE Trans. Microw. Theory Tech. 47 1413
[16]	Rice A K,Malloy K J 2000 J. Appl. Phys. 87 7892
[17]	Bouya M, Malbert N, Labat N, Carisetti D, Perdu P, Clément J C, Lambert B,Bonnet M 2008 Microelectron. Reliab. 48 1366
[18]	Miller E J, Dang X Z, Wieder H H, Asbeck P M, Yu E T, Sullivan G J,Redwing J M 2000 J. Appl. Phys. 87 8070
[19]	Kokorev M F,Maleev N A 1996 Solid State Electron. 39 297
[20]	Parvesh G, Sujata P, Subhasis H, Mridula G,Gupta R S 2007 Microelectron. J. 38 848
[21]	Gangwani P, Gupta M, Kaur R, Pandey S, Haldar S,Gupta R S Asia-Pacific Microwave Conference, Hong Kong, China, Dec 16—20 p1
[22]	Nicollian E H,Brews J R 1982 MOS (Metal Oxide Semiconductor) Physics and Technology (1st ed) (New York: Wiley Interscience) p928
[23]	Goetzberger E H N a A 1968 Microelectron. Reliab. 7
[24]	Hashizume T, Alekseev E, Pavlidis D, Boutros K S,Redwing J 2000 J. Appl. Phys. 88 1983
[25]	Balandin A, Morozov S, Wijeratne G, Cai S J, Li R, Li J, Wang K L, Viswanathan C R,Dubrovskii Y 1999 Appl. Phys. Lett. 75 2064
[26]	Rumyantsev S L, Pala N, Shur M S, Borovitskaya E, Dmitriev A P, Levinshtein M E, Gaska R, Khan M A, Jinwei Y, Xuhong H,Simin G 2001 IEEE Trans. Electron Devices 48 530
[27]	Levinshtein M E 15th International Conference on Noise in Physical Systems and 1/f Fluctuations Hong Kong,China, August 23—26 p213
[28]	Jones B K 1994 IEEE Trans. Electron Devices 41 2188
[29]	Vandamme L K J 1994 IEEE Trans. Electron Devices 41 2176

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