Ti掺杂NbSe2电子结构的第一性原理研究

徐晶; 梁家青; 李红萍; 李长生; 刘孝娟; 孟健

doi:10.7498/aps.64.207101

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Ti掺杂NbSe2电子结构的第一性原理研究

徐晶 , 梁家青 , 李红萍 , 李长生 , 刘孝娟 , 孟健

Ti掺杂NbSe2电子结构的第一性原理研究

徐晶, 梁家青, 李红萍, 李长生, 刘孝娟, 孟健

物理学报. 2015, 64(20): 207101.

doi: 10.7498/aps.64.207101.

摘要

采用基于密度泛函理论框架下的第一性原理平面波超软赝势方法, 计算了理想2H-NbSe2和Ti掺杂2H-NbSe2晶体的几何结构及电子结构; 对掺杂前后超胞的能带图、态密度及分波态密度图进行了分析. 结果表明, 掺杂后费米能级附近能量区域的电子态密度出现了较高的峰值, 且费米能级位置发生了改变. 理论上可以认为Ti的掺杂会使得NbSe2的导电性增强, 有利于开发新型的电接触复合材料.

关键词:

作者及机构信息

1.
江苏大学材料学院, 镇江 212013;

2.
中国科学院长春应用化学研究所, 吉林 130023

基金项目: 国家自然科学基金(批准号: 51302112)、江苏省高校自然科学项目(批准号: 14KJB430009) 和江苏省研究生培养创新工程(批准号: CXZZ130669)资助的课题.

参考文献

[1]	Xiao D, Liu G B, Feng W X, Xu X D, Yao W 2012 Phys. Rev. Lett. 108 196802
[2]	Song S S, Howard S, Liu Z J, Afusat O 2006 Appl. Phys. Lett. 89 041115
[3]	Chang K, Chen W X 2011 J. Mater. Chem. 21 17175
[4]	Xu J, Tang H, Chu Y Q, Li C S 2015 RSC. Adv. 5 48492
[5]	Tenne R 1995 Adv. Mater. 7 965
[6]	津田谷裕子, 松永が长いです 1978 固体潤滑ハンドブック (Vol.1) (Beijing: Mechanical Industry Press) p268 (in Chinese) [津谷裕子, 松永正久 1978 固体润滑手册(第一版)(北京: 机械工业出版社) 第268页]
[7]	Rowe G W 1960 Wear 3 274
[8]	Winer W O 1967 Wear 10 422
[9]	Qin X P, Ke P L, Wang A Y, Kim K H 2013 Surf. Coat. Technol. 228 275
[10]	Wang Z G, Su Q L, Yin G Q, Shi J, Deng H Q, Guan J, Wu M P, Zhou Y L, Lou H L, Fu Y Q 2014 Mater. Chem. Phys. 147 1068
[11]	Snure M, Kumar D, Tiwari A 2009 Appl. Phys. Lett. 94 012510
[12]	Zheng S W, He M, Li S T, Zhang Y 2014 Chin. Phys. B 23 087101
[13]	Wang Y Z, Xu Z P, Zhang W X, Zhang X, Wang Q, Zhang L 2014 Acta Phys. Sin. 63 237101 (in Chinese) [王永贞, 徐朝鹏, 张文秀, 张欣, 王倩,张磊 2014 物理学报 63 237101]
[14]	Koh Y Y, Kim Y K, Jung W S 2011 Phys. Chem. Solids 72 565
[15]	Iavarone M, Karapetrov G, Fedor J 2010 Phys.: Condens. Matter. 22 015501
[16]	Wu M S, Xu B, Liu G, Ouyang C Y 2013 Acta Phys. Sin. 62 037103 (in Chinese) [吴木生, 徐波, 刘刚, 欧阳楚英 2013 物理学报 62 037103]
[17]	Hammer B, Hansen L B, Nørskov J K 1999 Phys. Rev. B 59 7413
[18]	Vanderbilt D 1990 Phys. Rev. B 41 7892
[19]	Zheng S W, Fan G H, He M, Zhao L Z 2012 Acta Phys. Sin. 61 057102 (in Chinese) [郑树文, 范广涵, 何苗, 赵灵智 2012 物理学报 61 057102]
[20]	Sun J, Wang H T, He J 2005 Phys. Rev. B 71 125132

施引文献

[1]	Xiao D, Liu G B, Feng W X, Xu X D, Yao W 2012 Phys. Rev. Lett. 108 196802
[2]	Song S S, Howard S, Liu Z J, Afusat O 2006 Appl. Phys. Lett. 89 041115
[3]	Chang K, Chen W X 2011 J. Mater. Chem. 21 17175
[4]	Xu J, Tang H, Chu Y Q, Li C S 2015 RSC. Adv. 5 48492
[5]	Tenne R 1995 Adv. Mater. 7 965
[6]	津田谷裕子, 松永が长いです 1978 固体潤滑ハンドブック (Vol.1) (Beijing: Mechanical Industry Press) p268 (in Chinese) [津谷裕子, 松永正久 1978 固体润滑手册(第一版)(北京: 机械工业出版社) 第268页]
[7]	Rowe G W 1960 Wear 3 274
[8]	Winer W O 1967 Wear 10 422
[9]	Qin X P, Ke P L, Wang A Y, Kim K H 2013 Surf. Coat. Technol. 228 275
[10]	Wang Z G, Su Q L, Yin G Q, Shi J, Deng H Q, Guan J, Wu M P, Zhou Y L, Lou H L, Fu Y Q 2014 Mater. Chem. Phys. 147 1068
[11]	Snure M, Kumar D, Tiwari A 2009 Appl. Phys. Lett. 94 012510
[12]	Zheng S W, He M, Li S T, Zhang Y 2014 Chin. Phys. B 23 087101
[13]	Wang Y Z, Xu Z P, Zhang W X, Zhang X, Wang Q, Zhang L 2014 Acta Phys. Sin. 63 237101 (in Chinese) [王永贞, 徐朝鹏, 张文秀, 张欣, 王倩,张磊 2014 物理学报 63 237101]
[14]	Koh Y Y, Kim Y K, Jung W S 2011 Phys. Chem. Solids 72 565
[15]	Iavarone M, Karapetrov G, Fedor J 2010 Phys.: Condens. Matter. 22 015501
[16]	Wu M S, Xu B, Liu G, Ouyang C Y 2013 Acta Phys. Sin. 62 037103 (in Chinese) [吴木生, 徐波, 刘刚, 欧阳楚英 2013 物理学报 62 037103]
[17]	Hammer B, Hansen L B, Nørskov J K 1999 Phys. Rev. B 59 7413
[18]	Vanderbilt D 1990 Phys. Rev. B 41 7892
[19]	Zheng S W, Fan G H, He M, Zhao L Z 2012 Acta Phys. Sin. 61 057102 (in Chinese) [郑树文, 范广涵, 何苗, 赵灵智 2012 物理学报 61 057102]
[20]	Sun J, Wang H T, He J 2005 Phys. Rev. B 71 125132

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物理学报. 2015, 64(20): 207101.

doi: 10.7498/aps.64.207101.

Ti掺杂NbSe2电子结构的第一性原理研究

1. 江苏大学材料学院, 镇江 212013;
2. 中国科学院长春应用化学研究所, 吉林 130023

基金项目:

国家自然科学基金(批准号: 51302112)、江苏省高校自然科学项目(批准号: 14KJB430009) 和江苏省研究生培养创新工程(批准号: CXZZ130669)资助的课题.

收稿日期: 2015-05-05
修回日期: 2015-06-08
刊出日期: 2015-10-05

摘要: 采用基于密度泛函理论框架下的第一性原理平面波超软赝势方法, 计算了理想2H-NbSe2和Ti掺杂2H-NbSe2晶体的几何结构及电子结构; 对掺杂前后超胞的能带图、态密度及分波态密度图进行了分析. 结果表明, 掺杂后费米能级附近能量区域的电子态密度出现了较高的峰值, 且费米能级位置发生了改变. 理论上可以认为Ti的掺杂会使得NbSe2的导电性增强, 有利于开发新型的电接触复合材料.

关键词:

English Abstract

First-principles study on the electronic structure of Ti-doped NbSe2

1.
School of Materials Science and Engineering, Jiangsu University, Zhenjiang 212013, China;

2.
Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130023, China

Fund Project:
Project supported by the National Natural Science Foundation of China (Grant No. 51302112), the Nature Science Foundation of Jiangsu Colleges and Universities, China (Grant No. 14KJB430009), and the Jiangsu Graduate Student Innovation Project, China (Grant No. CXZZ13_0669).

Received Date: 05 May 2015
Accepted Date: 08 June 2015
Published Online: 05 October 2015

Abstract: Layered transition metal dichalcogenides (LTMDs) have renewed interest as electronic materials, but the poor conductivities hinder their further development. Chemical doping can often significantly modify atomic structures and electronic functionalities of a wide range of materials and thus acts as one of the most effective ways to precisely tune material properties for technological application. Here, the geometries and band structures as well as the densities of states of pure NbSe2 and Ti-doped NbSe2 nanostructure are studied by employing the ab-initio plane-wave ultra-soft pseudo potential technique based on the density functional theory. We optimize the ground state of NbSe2 in the layered structure by using the generalized gradient approximation for the exchange-correlation potential. The computational structural parameters are in good agreement with experimental values within 2.5%. To investigate the stability of the doped system with changing the concentration of Ti atoms, 2×2×1 2H-NbSe2 supercells are taken into consideration. Meanwhile, we consider a total of three possible Ti-doping models: substitution, intercalation, and embedded model, and investigate the energy band diagrams, state densities and densities of partial wave state diagram before and after the doping. The results show that the energy electron density of states reaches a higher peak, and the band structure near Fermi level (EF) is changed obviously, resulting in the variations of the band gap and EF position and then the increase of electronic conductivity after doping. In addition, our calculations also predict that the electron transport properties can be enhanced by doping Ti and it can be regarded as a useful way to tailor electronic states so as to improve electron transport properties of 2H-NbSe2. Such a remarkable modification of electronic structure of 2H-NbSe2 by chemical doping offers an additional way of modulating performances of LTMDs and developing new electrical contact composite materials.

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