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物理学报. 2003, 52(3): 687-691.
doi: 10.7498/aps.52.687.
螺旋波等离子体增强化学气相沉积氮化硅薄膜
- 收稿日期: 2002-07-23
- 修回日期: 2002-09-18
- 刊出日期: 2005-04-03
English Abstract
Silicon nitride films prepared by helicon wave plasam-enhanced chemical vapour deposition
- Received Date:
23 July 2002
- Accepted Date:
18 September 2002
- Published Online:
03 April 2005
Abstract: Silicon nitride films(SiN) are deposited by helicon-wave plasma-enhanced chemical vapour deposition(HWP-CVD) under the condition that a gas mixture of SiH4 and N2 is required.The influence of experimental parameters on the properties of the sample films is investigated.The parameters such as bond structure,thickness and refractivity of SiN films are measured by using Fourier transform infrared(FTIR) spectroscopy,ultraviolet-visible spectroscopy and ellipsometer detection technique.Results show that SiN films with a low hydrogen content can be prepared by HWP-CVD at a higher rate and lower substrate temperature,and the main bond mode in the deposited SiN films is Si—N stretching mode.At lower reactive gas pressure,the deposition rate is promoted and the density of the sample films increases.The appropriate increase in N2/SiH4 ratio is beneficial to the decrease of the H content in SiN films.
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