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物理学报. 2004, 53(2): 550-554.
doi: 10.7498/aps.53.550.
微氮直拉硅单晶中氧化诱生层错透射电镜研究
- 收稿日期: 2002-12-13
- 修回日期: 2003-04-11
- 刊出日期: 2004-01-05
English Abstract
Oxidation-induced stacking faults in nitrogen-doped czochralski silicon investigated by transmission electron microscope
- Received Date:
13 December 2002
- Accepted Date:
11 April 2003
- Published Online:
05 January 2004
Abstract: The extended-defects generated during oxidation in both of nitrogen-doped Czochralski (NCZ) silicon and common Czochralski (CZ) silicon have been investigated by Transmission Electron Microscopy(TEM). It is found that the size of the oxidation-induced stacking faults (OSFs) decreases with the increase of oxidation time in NCZ silicon, and punched-out dislocations could also be observed. While in CZ silicon, there are many polyhedral oxygen precipitates generated, and the size of OSFs increases with increasing oxidation time.
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