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摘要: 采用激光诱导掺锌的方法提高了常规GaN基外延片p-GaN层的空穴浓度，并将它制备成小功率白光发光二极管（LED）.对其光电性能做了详细的测量并进行了加速老化实验和分析.结果表明，与常规LED相比，经过激光诱导p-GaN层掺锌LED的光电性能获得了明显改善：正向工作电压VF从3.33 V降到3.13 V，串联电阻从30.27 Ω降到20.27 Ω，室温下衰退系数从1.68×10-4降到1.34×10-4，老化1600 h后的反向漏电流从超过0.2 μA降为不超过0.025 μA，器件的预测寿命延长了41％.器件光电性能改善的主要原因是激光诱导掺锌使LED的p-型欧姆接触改善和热阻降低所致.
Abstract: We increase the hole concentration of the p-GaN contact layer of the epitaxial wafer of conventional GaN-based devices by laser-induced Zn doping. Improvement of the photoelectric property of light-emitting diodes （LED） is confirmed. Compared with LED with no laser-induced doping, the forward voltage under 20 mA current is decreased from 3.33 V to 3.13 V, the series resistance is decreased from 30.27 Ω to 20.27 Ω， and the degradation coefficient at room temperature is reduced from 1.68×10-4 to 1.34×10-4. In addition, the reverse leakage current of the LED is reduced from over 0.2 μA to less than 0.025 μA after an aging time of 1600 h by accelerated lifetime testing, and the lifetime is increased about 41％. These results are attributed to the improvement of p-type ohmic contact and the decrease of the thermal resistance due to laser-induced doping of Zn to the p-GaN contact layer.
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