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研究了金属有机化学气相沉积设备生长条件对AlN 薄膜质量的影响. 应用Williamson-Hall方法测试并分析了不同氮化时间、AlN缓冲层生长时间、 载气流量生长参数对AlN薄膜的面内晶粒尺寸的影响. 实验结果表明, 随着氮化时间减小, 缓冲层生长时间增加, 载气流量减少, AlN薄膜的侧向生长和岛的合并能力增强, 面内晶粒尺寸增大, 从而晶体质量也变好.
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关键词:
- AlN /
- Williamson-Hall /
- 面内晶粒尺寸
[1] Kung P, McClintock R, Vizcaino J L P, Minder K, Bayram C, Razeghi M 2007 Quantum Sensing and Nanophotonic Devices III 6479 J4791
[2] McClintock R, Pau J L, Minder K, Bayram C, Kung P, Razeghi M 2007 Appl. Phys. Lett. 90 141112
[3] Pau J L, McClintock R, Minder K, Bayram C, Kung P, Razeghi M, Munoz E, Silversmith D 2007 Appl. Phys. Lett. 91 041104
[4] McClintock R, Pau J L, Bayram C, Fain B, Giedraitis P, Razeghi M 2009 Proc. SPIE 7222 72220U
[5] Razeghi M, Bayram C 2009 Proc. SPIE 7366 73661F
[6] Carrano J C, Lambert D J H, Eiting C J, Collins C J, Li T, Wang S, Yang B, Beck A L, Dupuis R D, Campbell J C 2000 Appl. Phys. Lett. 76 924
[7] Zhang S, Zhao D G, Liu Z S, Zhu J J, Zhang S M, Wang Y T, Duan L H, Liu W B, Jiang D S, Yang H 2009 Acta Phys. Sin. 58 7952 (in Chinese) [张爽, 赵德刚, 刘宗顺, 朱建军, 张书明, 王玉田, 段俐宏, 刘文宝, 江德生, 杨辉 2009 物理学报 58 7952]
[8] Williamson G K, Hall W H 1953 Acta Metall. 1 22
[9] Chierchia R, Bottcher T, Heinke H, Einfeldt S, Figge S, Hommel D 2003 J. Appl. Phys. 93 8918
[10] Zhang J C, Zhao D G, Wang J F, Wang Y T, Chen J, Liu J P, Yang H 2004 J. Cryst. Growth 268 24
[11] Xu Z J 2007 Measurement and Analysis of Semiconductor (2nd Ed.) (Beijing:Science Press) p164 (in Chinese) [许振嘉 2007 半导体的检测与分析 (第二版) (北京:科学出版社) 第164页]
[12] Paduano Q S, Weyburne D W, Jasinski J, Liliental-Weber Z 2004 J. Cryst. Growth 261 259
-
[1] Kung P, McClintock R, Vizcaino J L P, Minder K, Bayram C, Razeghi M 2007 Quantum Sensing and Nanophotonic Devices III 6479 J4791
[2] McClintock R, Pau J L, Minder K, Bayram C, Kung P, Razeghi M 2007 Appl. Phys. Lett. 90 141112
[3] Pau J L, McClintock R, Minder K, Bayram C, Kung P, Razeghi M, Munoz E, Silversmith D 2007 Appl. Phys. Lett. 91 041104
[4] McClintock R, Pau J L, Bayram C, Fain B, Giedraitis P, Razeghi M 2009 Proc. SPIE 7222 72220U
[5] Razeghi M, Bayram C 2009 Proc. SPIE 7366 73661F
[6] Carrano J C, Lambert D J H, Eiting C J, Collins C J, Li T, Wang S, Yang B, Beck A L, Dupuis R D, Campbell J C 2000 Appl. Phys. Lett. 76 924
[7] Zhang S, Zhao D G, Liu Z S, Zhu J J, Zhang S M, Wang Y T, Duan L H, Liu W B, Jiang D S, Yang H 2009 Acta Phys. Sin. 58 7952 (in Chinese) [张爽, 赵德刚, 刘宗顺, 朱建军, 张书明, 王玉田, 段俐宏, 刘文宝, 江德生, 杨辉 2009 物理学报 58 7952]
[8] Williamson G K, Hall W H 1953 Acta Metall. 1 22
[9] Chierchia R, Bottcher T, Heinke H, Einfeldt S, Figge S, Hommel D 2003 J. Appl. Phys. 93 8918
[10] Zhang J C, Zhao D G, Wang J F, Wang Y T, Chen J, Liu J P, Yang H 2004 J. Cryst. Growth 268 24
[11] Xu Z J 2007 Measurement and Analysis of Semiconductor (2nd Ed.) (Beijing:Science Press) p164 (in Chinese) [许振嘉 2007 半导体的检测与分析 (第二版) (北京:科学出版社) 第164页]
[12] Paduano Q S, Weyburne D W, Jasinski J, Liliental-Weber Z 2004 J. Cryst. Growth 261 259
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