| [1] |
Ji Chuan, Xu Jin. Effect of point defects on copper precipitation in heavily boron-doped Czochralski silicon p/p+ epitaxial wafer. Acta Physica Sinica,
2012, 61(23): 236102.
doi: 10.7498/aps.61.236102
|
| [2] |
Wang Yong-Zhi, Xu Jin, Wang Na-Ting, Ji Chuan, Zhang Guang-Chao. Effect of copper precipitation on the formation of denuded zone in Czchralski silicon. Acta Physica Sinica,
2012, 61(1): 016105.
doi: 10.7498/aps.61.016105
|
| [3] |
Liu Hong-Jie, Huang Jin, Wang Feng-Rui, Zhou Xin-Da, Jiang Xiao-Dong, Wu Wei-Dong. Effect of thermal stresses on fused silica surface on the laser induced damage. Acta Physica Sinica,
2010, 59(2): 1308-1313.
doi: 10.7498/aps.59.1308
|
| [4] |
Xu Jin, Li Fu-Long, Yang De-Ren. Grown-in oxygen precipitates in czochralski silicon investigated by transmission electron microscopy. Acta Physica Sinica,
2007, 56(7): 4113-4116.
doi: 10.7498/aps.56.4113
|
| [5] |
Hao Qiu-Yan, Liu Cai-Chi, Sun Wei-Zhong, Zhang Jian-Qiang, Sun Shi-Long, Zhao Li-Wei, Zhang Jian-Feng, Zhou Qi-Gang, Wang Jing. Effect of high temperature rapid thermal annealing on flow pattern defects in heavily Sb-doped CZSi. Acta Physica Sinica,
2005, 54(10): 4863-4866.
doi: 10.7498/aps.54.4863
|
| [6] |
Xu Jin, Yang De-Ren, Chu Jia, Ma Xiang-Yang, Que Duan-Lin. Oxidation-induced stacking faults in nitrogen-doped czochralski silicon investigated by transmission electron microscope. Acta Physica Sinica,
2004, 53(2): 550-554.
doi: 10.7498/aps.53.550
|
| [7] |
ZHONG ZHI-PING, ZHANG WEI-HUA, XU KE-ZUN, FENG REN-FEI, LI JIA-MING. A STUDY OF OPTICAL OSCILLATOR STRENGTHS IN THE VALENCE AND CONTINUUM REGIONS (11.0—19.0 eV) OF MOLECULAR HYDROGEN. Acta Physica Sinica,
1999, 48(5): 816-824.
doi: 10.7498/aps.48.816
|
| [8] |
LI MING, MAI ZHEN-HONG, CUI SHU-PAN. CHARACTERIZATION OF MICRO-DEFECTS IN SILICON SINGLE CRYSTALS BY ANALYZING THE PENDELL?SUNG FRINGES. Acta Physica Sinica,
1994, 43(1): 78-83.
doi: 10.7498/aps.43.78
|
| [9] |
HUANG YI-SEN, ZHAO QING-LAN. EFFECTS OF STRUCTURE IN RUBIDIUM ACID PHTHALATE (RAP) ON ITS SINGLE CRYSTAL GROWTH HABIT AND DEFECT FORMATION. Acta Physica Sinica,
1991, 40(12): 1960-1965.
doi: 10.7498/aps.40.1960
|
| [10] |
GAO YU-ZUN, S. OHNUKI, H. TAKAHASHI, Y. SATO, T. TAKEYAMA. THE EFFECT OF HYDROGEN IMPLANTATION ON ELECTRON IRRADIATED DEFECTS AND BLISTER FORMATION IN SILICON SINGLE CRYSTAL. Acta Physica Sinica,
1988, 37(1): 152-156.
doi: 10.7498/aps.37.152
|
| [11] |
SU FANG, C. LEE, P. C. TAYLOR. ELECTRON SPIN RESONANCE INVESTIGATION ON Si-H BONDS AND H-INDUCED DEFECTS IN SINGLE CRYSTALS OF SILICON. Acta Physica Sinica,
1988, 37(7): 1053-1058.
doi: 10.7498/aps.37.1053
|
| [12] |
CHU XI, MAI ZHEN-HONG, DAI DAO-YANG, CUI SHU-FAN, GE PEI-WEN. STUDY ON A PLANE-LIKE PRECIPITATE IN SILICON SINGLE CRYSTAL BY X-RAY TOPOGRAPHIC METHOD. Acta Physica Sinica,
1987, 36(3): 408-410.
doi: 10.7498/aps.36.408
|
| [13] |
Duan Pei Gao Ping Tang Ji-you. A STUDY ON AS-GROWN SWIRL DEFECTS IN CZ SILICON CRYSTAL. Acta Physica Sinica,
1987, 36(8): 986-991.
doi: 10.7498/aps.36.986
|
| [14] |
GAO YU-ZUN. TEM INVESTIGATION OF OXYGEN PRECIPITATES AND INDUCED DEFECTS IN ANNEALED CZ-Si SINGLE CRYSTAL. Acta Physica Sinica,
1984, 33(6): 840-844.
doi: 10.7498/aps.33.840
|
| [15] |
HE XIAN-CHANG. EXPERIMENTAL INVESTIGATION OF THE DISTRIBUTION OF DEFECTS CAUSED BY HYDROGEN IN SILICON SINGLE CRYSTALS. Acta Physica Sinica,
1984, 33(5): 694-695.
doi: 10.7498/aps.33.694
|
| [16] |
MAI ZHEN-HONG, CUI SHU-FAN, FU QUAN-GUI, LIN RU-GAN, ZHANG JIN-FU. OBSERVATION ON “AS GROWN” MICRODEFECTS IN CZ SILICON SINGLE CRYSTAL. Acta Physica Sinica,
1983, 32(5): 685-688.
doi: 10.7498/aps.32.685
|
| [17] |
YANG CHUAN-ZHENG, ZHU JIAN-SHENG. INVESTIGATION OF THE DEFECTS IN SILICON SINGLE CRYSTALS GROWN BY FLOATING-ZONE METHOD IN THE ATMOSPHERE CONTAINING HYDROGEN. Acta Physica Sinica,
1982, 31(3): 278-284.
doi: 10.7498/aps.31.278
|
| [18] |
LIU ZHEN-MAO, WANG GUI-HUA. A DISLOCATION SOURCE IN THE FLOAT-ZONE GROWN SILICON SINGLE CRYSTALS. Acta Physica Sinica,
1980, 29(9): 1164-1179.
doi: 10.7498/aps.29.1164
|
| [19] |
JIANG BAI-LIN, SHENG SHI-XIONG, XIAO ZHI-GANG, BAO JIAN-YING. MECHANISM OF THE FORMATION OF THE DEFECTS DURING HEAT TREATMENT IN SINGLE SILICON CRYSTAL GROWN BY FLOATING ZONE METHOD UNDER PURE HYDROGEN. Acta Physica Sinica,
1980, 29(10): 1283-1292.
doi: 10.7498/aps.29.1283
|
| [20] |
GAAS SINGLE CRYSTAL RESEARCH GROUP. TE-DOPED GaAs CRYSTALS OF LOW DISLOCATION DENSITY GROWN BY THE HORIZONTAL BRIDGMAN METHOD. Acta Physica Sinica,
1976, 25(2): 179-180.
doi: 10.7498/aps.25.179
|
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