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Study of the dipole characteristic of terahertz wave emitted from photoconductor switches

Jia Wan-Li Ji Wei-Li Ma De-Ming Shi Wei

Study of the dipole characteristic of terahertz wave emitted from photoconductor switches

Jia Wan-Li, Ji Wei-Li, Ma De-Ming, Shi Wei
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  • Abstract views:  3766
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  • Received Date:  07 November 2006
  • Accepted Date:  22 November 2006
  • Published Online:  20 July 2007

Study of the dipole characteristic of terahertz wave emitted from photoconductor switches

  • 1. (1)西安理工大学理学院应用物理系,西安 710048; (2)西安理工大学理学院应用物理系,西安 710048;中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室,上海 200050

Abstract: In this paper,different methods are used to simulate the dipole characteristic of terahertz (THz) wave emitted from low-temperature grown GaAs (LT-GaAs) and Semi-insulting GaAs (SI-GaAs) photoconductive semiconductor switches. The results indicate that the main cause of the dipole characteristic of THz wave emitted from LT-GaAs is the lifetime of optical-generated carriers being shorted than the generation time. For SI-GaAs photoconductive semiconductor switches with lifetime of optical-generated carriers longer than 100ps,the dipole characteristic of THz waveforms is mainly caused by intra-valley scattering and space charge field screening under different experimental conditions (different bias field and different optical pulse energy).

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