Influence of 60Co γ-ray irradiation on AlGaN/GaN high electron mobility transistors

Gu Wen-Ping; Zhang Jin-Cheng; Wang Chong; Feng Qian; Ma Xiao-Hua; Hao Yue

doi:10.7498/aps.58.1161

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中国物理学会期刊

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Gu Wen-Ping, Zhang Jin-Cheng, Wang Chong, Feng Qian, Ma Xiao-Hua, Hao Yue. Influence of 60Co γ-ray irradiation on AlGaN/GaN high electron mobility transistors. Acta Physica Sinica, 2009, 58(2): 1161-1165. DOI: 10.7498/aps.58.1161

Citation:

Gu Wen-Ping, Zhang Jin-Cheng, Wang Chong, Feng Qian, Ma Xiao-Hua, Hao Yue. Influence of 60Co γ-ray irradiation on AlGaN/GaN high electron mobility transistors. Acta Physica Sinica, 2009, 58(2): 1161-1165. DOI: 10.7498/aps.58.1161

Citation:

Gu Wen-Ping, Zhang Jin-Cheng, Wang Chong, Feng Qian, Ma Xiao-Hua, Hao Yue. Influence of 60Co γ-ray irradiation on AlGaN/GaN high electron mobility transistors. Acta Physica Sinica, 2009, 58(2): 1161-1165. DOI: 10.7498/aps.58.1161