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Influence of 60Co γ-ray irradiation on AlGaN/GaN high electron mobility transistors

Gu Wen-Ping Zhang Jin-Cheng Wang Chong Feng Qian Ma Xiao-Hua Hao Yue

Influence of 60Co γ-ray irradiation on AlGaN/GaN high electron mobility transistors

Gu Wen-Ping, Zhang Jin-Cheng, Wang Chong, Feng Qian, Ma Xiao-Hua, Hao Yue
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  • Received Date:  08 April 2008
  • Accepted Date:  08 August 2008
  • Published Online:  05 January 2009

Influence of 60Co γ-ray irradiation on AlGaN/GaN high electron mobility transistors

  • 1. 西安电子科技大学微电子学院,宽禁带半导体材料与器件教育部重点实验室,西安 710071

Abstract: AlGaN/GaN high electron mobility transistors (HEMT) unpassivated with different gate lengths are irradiated with 60Co γ-rays to doses up to 1 Mrad(Si). The bigger the doses are and the smaller the gate lengthis, the greater the changes in drain current and transconductanceare. While the gate leakage current is significantly increased after irradiation, the threshold voltage is relatively unaffected. By analysing the series resistance of channel and the threshold voltage, we find that irradiation induced electronegative surface state charges is one of the important reasons of radiation damage.

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