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Electronic state and its effect on the hydrophilicity of Cu/TiOx composite films

Xu Hui Wang Shun-Li Liu Ai-Ping Chen Ben-Yong Tang Wei-Hua

Electronic state and its effect on the hydrophilicity of Cu/TiOx composite films

Xu Hui, Wang Shun-Li, Liu Ai-Ping, Chen Ben-Yong, Tang Wei-Hua
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  • Cu/TiOx composite films have been deposited by RF magnetron sputtering at room temperature. The chemical components and structures of the Cu/TiOx composite films have been characterized by X-ray diffractometer (XRD), X-ray photoelectron spectroscopy (XPS), UV-vis spectroscopy and water contact angel measurement. It is found that the titanium presents in the form of Ti3+ before and after annealing. The results of UV-vis spectroscopy show the visible light absorption features of Cu/TiOx composite films with the absorption edge at about 600 nm. Contact angle results indicate that the Cu/TiOx films are hydrophilic, which is attributed to the added Cu.
    • Funds:
    [1]

    [1]Park D R, Zhang J, Ikeue K, Yamashita H, Anpo M 1999 J. Catal. 185 114

    [2]

    [2]Francois M, Danglot J, Grimbert B, Mounaix P, Muller M, Vanbe-sien O, Lippens D 2002 Microelectron. Eng. 61 537

    [3]

    [3]Hagfeldt A, Graetzel M 1995 Chem. Rev. 95 49

    [4]

    [4]Li Y, Sun S, Ma M, Ouyang Y, Yan W 2008 Chem. Eng. J. 142 147

    [5]

    [5]Sunada K, Watanabe T, Hashimoto K 2003 Environ. Sci. Technol. 37 4785

    [6]

    [6]Ollis D F, Pelizzetti E, Serpone N 1991 Environ. Sci. Technol. 25 1522

    [7]

    [7]Lee D, Rubner M F, Cohen R E 2006 Nano Lett. 6 2305

    [8]

    [8]Liu Y Y, Qian L Q, Gou C, Jia X, Wang J W, Tang W H 2009 J. Alloys Compd. 479 532

    [9]

    [9]Jian J K, Li Q, Sun Y F, Zheng Y F, Zhou X L 2008 Acta Phys.Sin. 57 3880 ( in Chinese ) [简基康、李茜、孙言飞、郑毓峰、周向玲 2008 物理学报 57 3880]

    [10]

    ]Young C, Lim T M, Chiang K, Scott J, Amal R 2008 Appl. Catal. B: Environ. 78 1

    [11]

    ]Paramasivam I, Macak J M, Schmuki P 2008 Electrochem. Commun. 10 71

    [12]

    ]Kontapakdee K, Panpranot J, Praserthdam P 2007 Catal. Commun. 8 2166

    [13]

    ]Patil S R, tangar U L, Gross S, Schubert U 2008 J. Adv. Oxid. Technol. 11 327

    [14]

    ]Meng F M, Sun Z Q 2009 Appl. Sur. Sci. 255 6715

    [15]

    ]Ashkaarran A A, Mohammadizadeh M R 2007 Eur. Phys. J. Appl. Phys. 40 155

    [16]

    ]Wang D Y, Lin H C, Yen C C 2006 Thin Solid Films 515 1047

    [17]

    ]Geng X H, Sun J, Sun F H, Wang G H, Wei C C, Xiong S Z, Xu S Z, Yue Q, Zhang X D, Zhao Y 2009 Acta Phys.Sin. 58 1293 ( in Chinese ) [耿新华、孙建、孙福河、王光红、魏长春、熊绍珍、许盛之、岳强、张晓丹、赵颖 2009 物理学报 58 1293]

    [18]

    ]Sirghi L, Nakamura M, Hatanaka Y, Takai O 2001 Langmuir 17 8199

    [19]

    ]Shen J, Wo S T, Cui X L, Cai Z W, Yang X L, Zhang Z J 2004 Acta Phys. -Chim. Sin. 20 1191 (in Chinese) [沈杰、沃松涛、崔晓莉、蔡臻炜、杨锡良、章壮健 2004 物理化学学报 20 1191]

    [20]

    ]Ji F, Ma J, Ma H L, Wang Y H,Yu X H, Zhang X J 2005 Acta Phys.Sin. 54 1731 ( in Chinese ) [计峰、马瑾、马洪磊、王玉恒、余旭浒、张锡健 2005 物理学报 54 1731]

    [21]

    ]Liu S H, Wang D H, Pan C H 1988 X-ray Photoelectron Spectroscopy (1st ed) ( Beijing: Science Press ) p47 ( in Chinese ) [刘世宏、王当憨、潘承璜 1988 X-射线光电子能谱分析 (第一版) (北京:科学出版社) 第47页]

    [22]

    ]Hou D L, Zhao R B, Meng H J, Jia L Y, Ye X J, Zhou H J, Li X L 2008 Thin Solid Films 516 3223

    [23]

    ]Wang D Y, Lin H C, Yen C C 2006 Thin Solid Films 515 1047

    [24]

    ]Sanjines R, Tang H, Berger H, Gozzo F, Margaritondo G, Levy F 1994 J. Appl. Phys. 75 2945

    [25]

    ]Liang Y J, Che M C 1993 The Handbook of Inorganic Thermodynamics (1st ed) (Shenyang: Northeasten University Press) p379 [梁英教、车荫昌 1993 无机物热力学数据手册 (第一版)(沈阳:东北大学出版社)第379页]

    [26]

    ]Lee H J, Hahn S H, Kim E J, You Y Z 2004 J. Mater. Sci. 39 3683

    [27]

    ]Zhang Y, Wang S T, Li X B, Chen L Y, Qian Y T, Zhang Z D 2006 J. Crystal Growth 291 196

    [28]

    ]Xu Y Y, Chen D R, Jiao X. L 2005 J. Phys. Chem. 109 13561

    [29]

    ]Zhang L L, Liu P Y, Zhong F, Zuo L, Sun W D 2005 J. Vac. Sci. Technol. 25 259 ( in Chinese ) [张丽丽、刘彭义、仲飞、翟琳、孙汪典 2005 真空科学与技术学报 25 259]

    [30]

    ]Sakai N, Wang R, Fujishima A, Watanabe T, Hashimoto K 1998 Langmuir 14 5918

  • [1]

    [1]Park D R, Zhang J, Ikeue K, Yamashita H, Anpo M 1999 J. Catal. 185 114

    [2]

    [2]Francois M, Danglot J, Grimbert B, Mounaix P, Muller M, Vanbe-sien O, Lippens D 2002 Microelectron. Eng. 61 537

    [3]

    [3]Hagfeldt A, Graetzel M 1995 Chem. Rev. 95 49

    [4]

    [4]Li Y, Sun S, Ma M, Ouyang Y, Yan W 2008 Chem. Eng. J. 142 147

    [5]

    [5]Sunada K, Watanabe T, Hashimoto K 2003 Environ. Sci. Technol. 37 4785

    [6]

    [6]Ollis D F, Pelizzetti E, Serpone N 1991 Environ. Sci. Technol. 25 1522

    [7]

    [7]Lee D, Rubner M F, Cohen R E 2006 Nano Lett. 6 2305

    [8]

    [8]Liu Y Y, Qian L Q, Gou C, Jia X, Wang J W, Tang W H 2009 J. Alloys Compd. 479 532

    [9]

    [9]Jian J K, Li Q, Sun Y F, Zheng Y F, Zhou X L 2008 Acta Phys.Sin. 57 3880 ( in Chinese ) [简基康、李茜、孙言飞、郑毓峰、周向玲 2008 物理学报 57 3880]

    [10]

    ]Young C, Lim T M, Chiang K, Scott J, Amal R 2008 Appl. Catal. B: Environ. 78 1

    [11]

    ]Paramasivam I, Macak J M, Schmuki P 2008 Electrochem. Commun. 10 71

    [12]

    ]Kontapakdee K, Panpranot J, Praserthdam P 2007 Catal. Commun. 8 2166

    [13]

    ]Patil S R, tangar U L, Gross S, Schubert U 2008 J. Adv. Oxid. Technol. 11 327

    [14]

    ]Meng F M, Sun Z Q 2009 Appl. Sur. Sci. 255 6715

    [15]

    ]Ashkaarran A A, Mohammadizadeh M R 2007 Eur. Phys. J. Appl. Phys. 40 155

    [16]

    ]Wang D Y, Lin H C, Yen C C 2006 Thin Solid Films 515 1047

    [17]

    ]Geng X H, Sun J, Sun F H, Wang G H, Wei C C, Xiong S Z, Xu S Z, Yue Q, Zhang X D, Zhao Y 2009 Acta Phys.Sin. 58 1293 ( in Chinese ) [耿新华、孙建、孙福河、王光红、魏长春、熊绍珍、许盛之、岳强、张晓丹、赵颖 2009 物理学报 58 1293]

    [18]

    ]Sirghi L, Nakamura M, Hatanaka Y, Takai O 2001 Langmuir 17 8199

    [19]

    ]Shen J, Wo S T, Cui X L, Cai Z W, Yang X L, Zhang Z J 2004 Acta Phys. -Chim. Sin. 20 1191 (in Chinese) [沈杰、沃松涛、崔晓莉、蔡臻炜、杨锡良、章壮健 2004 物理化学学报 20 1191]

    [20]

    ]Ji F, Ma J, Ma H L, Wang Y H,Yu X H, Zhang X J 2005 Acta Phys.Sin. 54 1731 ( in Chinese ) [计峰、马瑾、马洪磊、王玉恒、余旭浒、张锡健 2005 物理学报 54 1731]

    [21]

    ]Liu S H, Wang D H, Pan C H 1988 X-ray Photoelectron Spectroscopy (1st ed) ( Beijing: Science Press ) p47 ( in Chinese ) [刘世宏、王当憨、潘承璜 1988 X-射线光电子能谱分析 (第一版) (北京:科学出版社) 第47页]

    [22]

    ]Hou D L, Zhao R B, Meng H J, Jia L Y, Ye X J, Zhou H J, Li X L 2008 Thin Solid Films 516 3223

    [23]

    ]Wang D Y, Lin H C, Yen C C 2006 Thin Solid Films 515 1047

    [24]

    ]Sanjines R, Tang H, Berger H, Gozzo F, Margaritondo G, Levy F 1994 J. Appl. Phys. 75 2945

    [25]

    ]Liang Y J, Che M C 1993 The Handbook of Inorganic Thermodynamics (1st ed) (Shenyang: Northeasten University Press) p379 [梁英教、车荫昌 1993 无机物热力学数据手册 (第一版)(沈阳:东北大学出版社)第379页]

    [26]

    ]Lee H J, Hahn S H, Kim E J, You Y Z 2004 J. Mater. Sci. 39 3683

    [27]

    ]Zhang Y, Wang S T, Li X B, Chen L Y, Qian Y T, Zhang Z D 2006 J. Crystal Growth 291 196

    [28]

    ]Xu Y Y, Chen D R, Jiao X. L 2005 J. Phys. Chem. 109 13561

    [29]

    ]Zhang L L, Liu P Y, Zhong F, Zuo L, Sun W D 2005 J. Vac. Sci. Technol. 25 259 ( in Chinese ) [张丽丽、刘彭义、仲飞、翟琳、孙汪典 2005 真空科学与技术学报 25 259]

    [30]

    ]Sakai N, Wang R, Fujishima A, Watanabe T, Hashimoto K 1998 Langmuir 14 5918

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  • Received Date:  07 August 2009
  • Accepted Date:  01 September 2009
  • Published Online:  15 May 2010

Electronic state and its effect on the hydrophilicity of Cu/TiOx composite films

  • 1. 浙江理工大学物理系,光电材料与器件中心,杭州 310018

Abstract: Cu/TiOx composite films have been deposited by RF magnetron sputtering at room temperature. The chemical components and structures of the Cu/TiOx composite films have been characterized by X-ray diffractometer (XRD), X-ray photoelectron spectroscopy (XPS), UV-vis spectroscopy and water contact angel measurement. It is found that the titanium presents in the form of Ti3+ before and after annealing. The results of UV-vis spectroscopy show the visible light absorption features of Cu/TiOx composite films with the absorption edge at about 600 nm. Contact angle results indicate that the Cu/TiOx films are hydrophilic, which is attributed to the added Cu.

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