Based on Fermi's golden rule and the theory of Boltzmann collision term approximation, hole scattering mechanism in strained Si/(001)Si1-xGex, namely, tetragonal strained Si is studied, including ionized impurity, acoustic phonon, non-polar optical phonon and total scattering rates. It is found that the total scattering rate of hole in strained Si/(001)Si1-xGex decreases obviously with the increase of stress when Ge fraction (x) is less than 0.2 and the values continue to show a constant tendency. The total hole scattering rate of strained Si/(001)Si1-xGex decreases about 66% at most in comparison with one of unstrained Si. The hole mobility enhancement in strained Si material is due to the decrease of hole scattering rate. The result can provide valuable references for the research of hole mobility of strained Si materials and the design of PMOS devices.