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Threshold voltage analytical model of fully depleted strained Si single Halo silicon-on-insulator metal-oxide semiconductor field effect transistor

Xin Yan-Hui Liu Hong-Xia Fan Xiao-Jiao Zhuo Qing-Qing

Threshold voltage analytical model of fully depleted strained Si single Halo silicon-on-insulator metal-oxide semiconductor field effect transistor

Xin Yan-Hui, Liu Hong-Xia, Fan Xiao-Jiao, Zhuo Qing-Qing
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Publishing process
  • Received Date:  24 November 2012
  • Accepted Date:  17 December 2012
  • Published Online:  05 May 2013

Threshold voltage analytical model of fully depleted strained Si single Halo silicon-on-insulator metal-oxide semiconductor field effect transistor

  • 1. Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi’an 710071, China
Fund Project:  Project supported by the National Natural Science Foundation of China (Grant Nos. 60976068, 61076097), and Specialized Research Fund for the Doctoral Program of Higher Education, China (Grant No. 20110203110012).

Abstract: A single Halo fully depleted strain Si Silicon-On-insulator (SOI) structure, which has the advantages of strained Si, Halo doping, and SOI structure, is proposed to improve driving current, suppress the short channel effect (SCE) and drain induced barrier lowering (DIBL) effect. A two-dimensional analytical model for the surface potential, the surface electric field and the threshold voltage is proposed by solving Poisson's equation. The effects of Ge fraction in the relaxed layer on surface potential and threshold voltage are investigated. In the paper we analyze the influence of drain voltage on surface potential. Finally the effects of Halo doping on threshold voltage and DIBL are investigated. The results show that the novel device can suppress the short channel effect and DIBL effect, and increase carrier transport speed.

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