Search

Article

x

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

Effects of high pressure annealing technique on the structure, morphology and electric properties of 0.65PMN-0.35PT thin films

Guo Hong-Li Yang Huan-Yin Tang Huan-Fang Hou Hai-Jun Zheng Yong-Lin Zhu Jian-Guo

Effects of high pressure annealing technique on the structure, morphology and electric properties of 0.65PMN-0.35PT thin films

Guo Hong-Li, Yang Huan-Yin, Tang Huan-Fang, Hou Hai-Jun, Zheng Yong-Lin, Zhu Jian-Guo
PDF
Get Citation

(PLEASE TRANSLATE TO ENGLISH

BY GOOGLE TRANSLATE IF NEEDED.)

Metrics
  • Abstract views:  1321
  • PDF Downloads:  848
  • Cited By: 0
Publishing process
  • Received Date:  28 January 2013
  • Accepted Date:  19 March 2013
  • Published Online:  05 July 2013

Effects of high pressure annealing technique on the structure, morphology and electric properties of 0.65PMN-0.35PT thin films

  • 1. The Institute of Condensed Matter Physics, Yangtze Normal University, Chongqing 408100, China;
  • 2. School of Materials Engineering, Yancheng Institute of Technology, Jiangsu 224051, China;
  • 3. College of Materials Science and Engineering, Sichuan University, Chengdu 610064, China
Fund Project:  Project supported by the Chongqing municipal education commission of China (Grant No. KJ121317), and the National Natural Science Foundation of China (Grant No. 60771016).

Abstract: Thin films of 0.65PMN-0.35PT PMN=Pb (Mg1/3Nb2/3)O3 and PT=PbTiO3 with a thickness about 250 nm were prepared on LaNiO3/SiO2/Si substrates by radio frequency magnetron sputtering. The films were annealed using high pressure annealing (HPA) technique in oxygen atmosphere. Effect of HPA on the crystal structure, morphology and electrical properties of the films was studied. XRD patterns of the films indicated that PMN-PT films treated by HPA in oxygen atmosphere (annealing temperature 400℃) showed a pure perovskite phase, with highly (100) preferred orientation. The strong and sharp diffraction peak showed the better crystallization of PMN-PT thin films after HPA. SEM observations showed that a rod or bubble morphology was present on the films surface. Ferroelectric properties tests showed that the PMN-PT film annealed in oxygen atmosphere at a pressure of 4 MPa, and annealing time of 4 h had good ferroelectric properties, in which the remanent polarization (Pr) could reach 10.544 uC/cm2. The shape of electric hysteresis was better, but the leakage current was too large, which may be due to the microstructure of the films. Meanwhile, the dielectric tests indicated that PMN-PT thin films could show very good dielectric properties, and the dielectric constant (r) could reach 913, and dielectric loss (tg) was very small, only 0.065.

Reference (19)

Catalog

    /

    返回文章
    返回