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本文将包迹函数近似推广用于计算有理数近似下,垂直于超晶格轴的波矢K⊥不等于零时,准周期半导体超晶格(QSS)的电子子带和波函数,对K⊥=0的情形,分别计算了Ⅰ类的GaAs/AlxGa1-xAs和Ⅱ类的InAs/GaSb QSS的电子子带和波函数,直至代序数m=9和6。对于价带对导带影响强的InAs/GaSb QSS,分别计算了m=5和6时电子子带随K⊥的变化关系。并提出了利用本文结果计算Ⅰ类的GaAs/AlxGa1-xAs QSS带间集体激发的具体方法。The envelope function approximation was generalized to calculate the electron subbands and wave functions of quasiperiodic semiconductor superlattices (QSS) within rational approximation, for nonzero K⊥ (the wave vector perpendicular to the axis of the QSS). For K⊥= 0, the electron subbands and wave functions are calculated for InAs/ GaSb QSS up to the generation number m =9 and for GaAs/AlxGa1-xAs QSS up to m = 6. For InAs/GaSb QSS, the influence of valence band states on conduction band state is strong. The dependences of the energies and band widths of electron subbands on K⊥ are obtained for m = 5 and 6. A theoretical method is proposed to calculate the intersubband collective excitations of the type-I QSS by means of the above results.
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