-
报道了微波放电法在GaAs表面生长GaS薄膜.用电容电压法(C-V)、伏安法(I-V)以及深能级瞬态谱(DLTS)等测试手段对GaS/GaAs界面的电学性质进行了研究.GaS/GaAs界面的CV特性反映此处的界面特性比较好,界面态密度约为1012/(cm2·eV).DLTS的测试得到了与其一致的结果.另外,从I-V曲线中漏电流的大小,估算出GaS的电阻率为1011Ω·cmA novel passivation film on GaAs surface has been grown by microwave sulfur glow discharge technique.Electronic properties of GaS/GaAs interface have been studied by C-V,I-V, and DLTS measurements.C-V measurement shows that the properties of GaS/GaAs interface are nearly ideal and interface state density is about 1012/(cm2·eV),which agrees with result from DLTS measurement.From leak current of MIS′s structure in I-V spectra,the resistivity of GaS is estimated about 1011Ω·cm.
计量
- 文章访问数: 6085
- PDF下载量: 665
- 被引次数: 0