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Multilayer electroluminescent devices with a system in which red-emitting quantum dots doped PVK serves as the active layer is fabricated through non-treatment process, the device structure being ITO/PVK:QDs/Alq3/Al. Measuring the emission spectra and electrical characteristics of the devices we study the effect of different QDs doping concentration (mass fraction), and propose some possible solutions to optimize the PVK:QDs system after taking pure QDs for comparison. Experimental results show that changing QDs doping concentration would bring significant impact on the electroluminescence (EL) spectra, current density, brightness, and the stability of devices. When QDs doping concentration is low, we will mainly see the light of Alq3; when QDs doping concentration is 20%, saturated pure red light emission is observed and it is brighter than other devices. However, when the doping concentration is high, a slight red shift occurs in the EL spectra, and the performance of the device gets worse. With a suitable doping concentration, the PVK:QDs may increase the stability of devices.
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Keywords:
- non-treatment /
- dope /
- quantum dots /
- PVK
[1] Colvin V L, Schlamp M C, Alivisatos A 1994 Nature 370 354
[2] Steckel J S, Snee P, Coe-Sullivan S, Zimmer J P, Halpert J E, Anikeeva P, Kim L A, Bulovi V, Bawendi M G 2006 Angew. Chem. Int. Ed. 45 5796
[3] Steckel J S, Zimmer J P, Coe-Sullivan S, Stott N E, Bulovi V, Bawendi M G 2004 Angew. Chem. Int. Ed. 43 2154
[4] O’Connor E, O’Riordan A, Doyle H, Moynihan S, Cuddihy A, Redmond G 2005 Appl. Phys. Lett. 86 201114
[5] Steckel J S, Coe-Sullivan S, Bulovi V, Bawendi M G 2003 Adv. Mater. 15 1862
[6] Bakueva L, Musikhin S, Hines M A, Chang T-WF, Tzolov M, Scholes G D, Sargent E H 2003 Appl. Phys. Lett. 82 2895
[7] Murray C B, Kagan C R, Bawendi M G 1995 Science 270 1335
[8] Lin X M, Jaeger H M, Sorensen C M, Klabunde K J 2001 J. Phys. Chem. B 105 3353
[9] Santhanam V, Andres R P 2004 Nano Lett. 4 41
[10] Dabbousi B O, Murray C B, Rubner M F, Bawendi M G 1994 Chem. Mater. 6 216
[11] Collier C P, Saykally R J, Shiang J J, Henrichs S E, Heath J R 1997 Science 277 1978
[12] Kong Y C, Zhou D Y, Lan Q, Liu J L, Miao Z H, Feng S L, Niu Z C 2003 Chin. Phys. 12 97
[13] Sun Q J, Wang Y A, Li L S, Wang D Y, Zhu T, Xu J, Yang C H, Li Y F 2007 Nat. Photonics 1 717
[14] Gordan K C, Walsh P J, McGale E M 2004 Curr. Appl. Phys. 4 331
[15] Anikeeva P O, Halpert J E, Bawendi M G, Bulovi V 2009 Nano Lett. 9 2532
[16] Wu C C, Wu C I, Sturm J C, Kahn A 1997 Appl. Phys. Lett. 70 1348
[17] Chen W B, Xu Z X, Li K, Chui S Y, Roy V A L, Lai P T, Che C M 2012 Chin. Phys. B 21 78401
[18] Coe-Sullivan S, Steckel J S, Woo W K, Bawendi M G, Bulovi V 2005 Adv. Funct. Mater. 15 1117
[19] Chen B J, Liu S Y 1997 Synth. Met. 91 169
[20] Zhu H N, Xu Z, Zhao S L, Zhang F J, Kong C, Yan G, Gong W 2010 Acta Phys. Sin. 59 8093 (in Chinese)[朱海娜, 徐征, 赵谡玲, 张福俊, 孔超, 闫光, 龚伟 2010 物理学报 59 8093]
[21] Dong W F, Yang Q Q, Li J, Wang Q M, Cui Q, Zhou J M, Huang Q 1996 Chin. Phys. 5 456
[22] Dabbousi B O, Bawendi M G, Onitsuka O, Rubner M F 1995 Appl. Phys. Lett. 66 1316
[23] Nie H, Zhang B, Tang X Z 2007 Chin. Phys. 16 730
-
[1] Colvin V L, Schlamp M C, Alivisatos A 1994 Nature 370 354
[2] Steckel J S, Snee P, Coe-Sullivan S, Zimmer J P, Halpert J E, Anikeeva P, Kim L A, Bulovi V, Bawendi M G 2006 Angew. Chem. Int. Ed. 45 5796
[3] Steckel J S, Zimmer J P, Coe-Sullivan S, Stott N E, Bulovi V, Bawendi M G 2004 Angew. Chem. Int. Ed. 43 2154
[4] O’Connor E, O’Riordan A, Doyle H, Moynihan S, Cuddihy A, Redmond G 2005 Appl. Phys. Lett. 86 201114
[5] Steckel J S, Coe-Sullivan S, Bulovi V, Bawendi M G 2003 Adv. Mater. 15 1862
[6] Bakueva L, Musikhin S, Hines M A, Chang T-WF, Tzolov M, Scholes G D, Sargent E H 2003 Appl. Phys. Lett. 82 2895
[7] Murray C B, Kagan C R, Bawendi M G 1995 Science 270 1335
[8] Lin X M, Jaeger H M, Sorensen C M, Klabunde K J 2001 J. Phys. Chem. B 105 3353
[9] Santhanam V, Andres R P 2004 Nano Lett. 4 41
[10] Dabbousi B O, Murray C B, Rubner M F, Bawendi M G 1994 Chem. Mater. 6 216
[11] Collier C P, Saykally R J, Shiang J J, Henrichs S E, Heath J R 1997 Science 277 1978
[12] Kong Y C, Zhou D Y, Lan Q, Liu J L, Miao Z H, Feng S L, Niu Z C 2003 Chin. Phys. 12 97
[13] Sun Q J, Wang Y A, Li L S, Wang D Y, Zhu T, Xu J, Yang C H, Li Y F 2007 Nat. Photonics 1 717
[14] Gordan K C, Walsh P J, McGale E M 2004 Curr. Appl. Phys. 4 331
[15] Anikeeva P O, Halpert J E, Bawendi M G, Bulovi V 2009 Nano Lett. 9 2532
[16] Wu C C, Wu C I, Sturm J C, Kahn A 1997 Appl. Phys. Lett. 70 1348
[17] Chen W B, Xu Z X, Li K, Chui S Y, Roy V A L, Lai P T, Che C M 2012 Chin. Phys. B 21 78401
[18] Coe-Sullivan S, Steckel J S, Woo W K, Bawendi M G, Bulovi V 2005 Adv. Funct. Mater. 15 1117
[19] Chen B J, Liu S Y 1997 Synth. Met. 91 169
[20] Zhu H N, Xu Z, Zhao S L, Zhang F J, Kong C, Yan G, Gong W 2010 Acta Phys. Sin. 59 8093 (in Chinese)[朱海娜, 徐征, 赵谡玲, 张福俊, 孔超, 闫光, 龚伟 2010 物理学报 59 8093]
[21] Dong W F, Yang Q Q, Li J, Wang Q M, Cui Q, Zhou J M, Huang Q 1996 Chin. Phys. 5 456
[22] Dabbousi B O, Bawendi M G, Onitsuka O, Rubner M F 1995 Appl. Phys. Lett. 66 1316
[23] Nie H, Zhang B, Tang X Z 2007 Chin. Phys. 16 730
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