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To measure the junction temperature of diodes under operating conditions, the temperature calibration curve is studied under large current conditions. To avoid the self heating by the large current conditions, pulsed currents are used in the paper. The temperature calibration curve of TO-247-2L fast recovery diode is investigated in this paper. The 0-1.5 A pulse current, of which the pulse width is 250 μs and the duty cycle is 5%, is chosen to study the temperature calibration curves under 50, 70, 90, 110, 130 ℃ respectively.#br#The results show that under the large current condition, the temperature calibration curve bends. The main reason for the bending phenomenon is that the series resistance changes with temperature increasing, which is affected by the mobilities of electrons and holes in semiconductor material. With the temperature rising, the mobility decreases, which results in the increasing of series resistance. Due to the series resistance increasing The voltage on p-n junction will be reduced. For this reason, a higher voltage is needed to obtain the same current, and the temperature calibration curve will bend.#br#There are two reasons which will lead to the temperature rising. The first reason is self-heating of devices by the power dissipation, and the second reason is that the temperature of device is heated by ambient temperature. Under the same temperature, self-heating behaviors of device by different currents will result in different series resistances. But in the paper, the results show that the series resistances under different currents are the same, which illustrates that self-heating is not the key reason for the change of series resistance. So, the temperature changing of the diode is caused by the ambient temperature rising, which verifies that the bending phenomenon of the temperature calibration curve of TO-247-2L fast recovery diode is caused by the ambient temperature rising.#br#Then, through experimental measurements and theoretical calculations, the accurate nonlinear temperature calibration curve is acquired, which can reduce the measurement errors of high current transient junction temperature.
[1] Kuball M, Riedel G J, Pomeroy J W, Sarua A, Uren M J, Martin T, Hilton K P, Maclean J O, Wallis D J 2007 IEEE 28 86
[2] Profumo F, Zhu Y J 2000 Converter Technology 2 20 (in Chinese) [Profumo F, 朱咏嘉 2000 变流技术与电力牵引 2 20]
[3] Rakhmatov A Z, Abdulkhaev O A, Karimov A V, Yodgorova D M 2012 J. Engineer. Phys. Thermophys. 85 836
[4] Abdulkhaev O A, Yodgorova D M, Karimov A V, Karimov A A, Asanova G O 2012 J. Engineer. Phys. Thermophys. 85 851
[5] Hu Z B 2014 M. S. Dissertation (Xiamen: Xiamen University) (in Chinese) [胡振邦 2014 硕士学位论文 (厦门: 厦门大学)]
[6] Chen H T 2010 M. S. Dissertation (Xiamen: Xiamen University) (in Chinese) [陈焕庭 2010 硕士学位论文(厦门: 厦门大学)]
[7] Zhu Y J, Miao Q H, Zhang X H, Yang L Y, Lu S J 2007 J. Semicond. 28 980 (in Chinese) [朱阳军, 苗庆海, 张兴华, Yang Lieyong, 卢烁今 2007 半导体学报 28 980]
[8] Lu S J 2007 M. S. Dissertation (Shandong: Shandong University) (in Chinese) [卢烁今 2007 硕士学位论文(济南: 山东大学)]
[9] Kong W X 2013 M. S. Dissertation (Nanjing: Nanjing University) (in Chinese) [孔维贤 2013 硕士学位论文(南京: 南京大学)]
[10] Hu H Q, Zhang W C 2013 Electronics World 61 60 (in Chinese) [胡红钱, 张文成 2013 电子世界 61 60]
[11] Liu B L, Tang Y, Luo Y F, Liu D Z, Wang R T, Wang B 2014 Acta Phys. Sin. 63 177201(in Chinese) [刘宾礼, 唐勇, 罗毅飞, 刘德志, 王瑞田, 汪波 2014 物理学报 63 177201]
[12] Liu E K et al. 2010 Semicond. Phys. (Beijing: National Defense Industry Press) p97, 156 (in Chinese) [刘恩科等 2010 半导体物理学(北京: 国防工业出版社)第97, 156页]
[13] Zhang Y Z 2009 Ph. D. Dissertation (Beijing: Beijing University of Technology) (in Chinese) [张跃宗 2009 博士学位论文(北京: 北京工业大学)]
[14] Chen M, Hu A, Tang Y, Wang B 2012 J. Xi'an Jiaotong Univ. 46 70 (in Chinese) [陈明, 胡安, 唐勇, 汪波 2012 西安交通大学学报 46 70]
[15] Chen Q, Luo X, Zhou S, Liu S 2011 Rev. Sci. Instrum. 82 084904
[16] Li B Q, Liu Y H, Feng Y C 2008 Acta Phys. Sin. 57 477(in Chinese) [李炳乾, 刘玉华, 冯玉春 2008 物理学报 57 477]
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[1] Kuball M, Riedel G J, Pomeroy J W, Sarua A, Uren M J, Martin T, Hilton K P, Maclean J O, Wallis D J 2007 IEEE 28 86
[2] Profumo F, Zhu Y J 2000 Converter Technology 2 20 (in Chinese) [Profumo F, 朱咏嘉 2000 变流技术与电力牵引 2 20]
[3] Rakhmatov A Z, Abdulkhaev O A, Karimov A V, Yodgorova D M 2012 J. Engineer. Phys. Thermophys. 85 836
[4] Abdulkhaev O A, Yodgorova D M, Karimov A V, Karimov A A, Asanova G O 2012 J. Engineer. Phys. Thermophys. 85 851
[5] Hu Z B 2014 M. S. Dissertation (Xiamen: Xiamen University) (in Chinese) [胡振邦 2014 硕士学位论文 (厦门: 厦门大学)]
[6] Chen H T 2010 M. S. Dissertation (Xiamen: Xiamen University) (in Chinese) [陈焕庭 2010 硕士学位论文(厦门: 厦门大学)]
[7] Zhu Y J, Miao Q H, Zhang X H, Yang L Y, Lu S J 2007 J. Semicond. 28 980 (in Chinese) [朱阳军, 苗庆海, 张兴华, Yang Lieyong, 卢烁今 2007 半导体学报 28 980]
[8] Lu S J 2007 M. S. Dissertation (Shandong: Shandong University) (in Chinese) [卢烁今 2007 硕士学位论文(济南: 山东大学)]
[9] Kong W X 2013 M. S. Dissertation (Nanjing: Nanjing University) (in Chinese) [孔维贤 2013 硕士学位论文(南京: 南京大学)]
[10] Hu H Q, Zhang W C 2013 Electronics World 61 60 (in Chinese) [胡红钱, 张文成 2013 电子世界 61 60]
[11] Liu B L, Tang Y, Luo Y F, Liu D Z, Wang R T, Wang B 2014 Acta Phys. Sin. 63 177201(in Chinese) [刘宾礼, 唐勇, 罗毅飞, 刘德志, 王瑞田, 汪波 2014 物理学报 63 177201]
[12] Liu E K et al. 2010 Semicond. Phys. (Beijing: National Defense Industry Press) p97, 156 (in Chinese) [刘恩科等 2010 半导体物理学(北京: 国防工业出版社)第97, 156页]
[13] Zhang Y Z 2009 Ph. D. Dissertation (Beijing: Beijing University of Technology) (in Chinese) [张跃宗 2009 博士学位论文(北京: 北京工业大学)]
[14] Chen M, Hu A, Tang Y, Wang B 2012 J. Xi'an Jiaotong Univ. 46 70 (in Chinese) [陈明, 胡安, 唐勇, 汪波 2012 西安交通大学学报 46 70]
[15] Chen Q, Luo X, Zhou S, Liu S 2011 Rev. Sci. Instrum. 82 084904
[16] Li B Q, Liu Y H, Feng Y C 2008 Acta Phys. Sin. 57 477(in Chinese) [李炳乾, 刘玉华, 冯玉春 2008 物理学报 57 477]
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