限制电流对Ta/BaTiO3/Al2O3/ITO忆阻器的开关比和稳定性调控

何朝滔; 卢羽; 李秀林; 陈鹏

doi:10.7498/aps.71.20211999

摘要

利用磁控溅射技术沉积了Ta/BaTiO₃/Al₂O₃/ITO多层薄膜, 观察到该结构中的电阻开关现象受到限制电流的调控. 在限制电流大小为10^–2 A时, 器件中的电阻开关现象达到最优. Ta/BaTiO₃/Al₂O₃/ITO多层薄膜的电阻开关具有良好的可重复性和稳定性. 本文使用空间限制电流的传导模型对Ta/BaTiO₃/Al₂O₃/ITO器件中受限制电流调控的电阻开关传导机理进行了解释.

关键词:

In this work, Ta/BaTiO₃/Al₂O₃ multi-layer thin film is deposited on indium tin oxide substrates by using the magnetron sputtering technology. Obvious resistive switching performance can be observed by increasing the compliance current. Ohmic and space charge limited current conduction mechanisms are demonstrated in Ta/BaTiO₃/Al₂O₃. The reproducible and stable resistive switching behaviors in Ta/BaTiO₃/Al₂O₃/ITO device at I_cc = 10^–2 A are reported. The results show that no obvious degradation is found after 365 successive cycles tests.

Keywords:

作者及机构信息

西南大学物理科学与技术学院, 重庆　400715

通信作者: 陈鹏, pchen@swu.edu.cn

Authors and contacts

School of Physics Science and Technology, Southwest University, Chongqing 400715, China

Corresponding author: Chen Peng, pchen@swu.edu.cn

文章全文 : translate this paragraph

参考文献

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施引文献

图 1 (a) Ta/BaTiO₃/Al₂O₃/ITO器件XRD图, 插图为器件结构示意图; (b)器件截面示意图; (c) Ta电极表面SEM扫描图片, 插图为EDS原子百分比分析结果

Fig. 1. (a) XRD pattern of Ta/BaTiO₃/Al₂O₃/ITO device, the inset shows the schematic diagram of the device; (b) SEM cross-sectional image of the device; (c) SEM image of Ta surface, the insert is the result of EDS analysis.

下载: 全尺寸图片幻灯片

图 2 (a) Ta/BaTiO₃/Al₂O₃/ITO器件在I_cc= 10^–3, 5 × 10^–3, 10^–2 A下的电阻开关; (b) 50个器件中部分器件的I-V曲线图

Fig. 2. (a) The RS behaviors of the Ta/BaTiO₃/Al₂O₃/ITO device with I_cc= 10^–3, 5 × 10^–3, 10^–2 A; (b) I-V characteristic curves for some cells of the fifty devices.

下载: 全尺寸图片幻灯片

图 3 Ta/BaTiO₃/Ta器件的I-V特性, 插图为器件结构示意图

Fig. 3. The I-V curves measured for the Ta/BaTiO₃/Ta device, the inset is schematic figure for stacked structures of the device.

下载: 全尺寸图片幻灯片

图 4 I_cc= 10^–2 A, Ta/BaTiO₃/Al₂O₃/ITO器件相关特征的拟合结果　(a) I-V; (b) I-V²(高偏压区域);

Fig. 4. I_cc= 10^–2 A, the fitting result for characteristics of the Ta/BaTiO₃/Al₂O₃/ITO device: (a) I-V; (b) I-V² (high-voltage region)

下载: 全尺寸图片幻灯片

图 5 Ta/BaTiO₃/Al₂O₃/ITO器件中电阻开关的原理示意图

Fig. 5. The schematic diagrams of the RS in the Ta/BaTiO₃/Al₂O₃/ITO device.

下载: 全尺寸图片幻灯片

图 6 (a) I_cc= 10^–2 A, Ta/BaTiO₃/Al₂O₃/ITO器件连续循环100圈后LRS和HRS变化情况; (b) 器件循环365圈中RS现象的随机选取

Fig. 6. (a) The resistance evolution of HRS and LRS for the Ta/BaTiO₃/Al₂O₃/ITO device with I_cc= 10^–2 A; (b) the continuous endurance measurements for the device.

下载: 全尺寸图片幻灯片

[1]	Hu Z Q, Li Q, Li M Y, Wang Q W, Zhu Y D, Zhao X Z, Liu Y, Dong S X 2013 Appl. Phys. Lett. 102 102901 Google Scholar
[2]	Zhou G D, Sun B, Hu X, Sun L, Zou Z, Xiao B, Qiu W, Wu B, Li J, Han J, Liao L, Xu C, Xiao G, Xiao L, Cheng J, Zheng S, Wang L, Song Q, Duan S 2021 Adv. Sci. 8 2003765 Google Scholar
[3]	Sun B, Zhao W X, Liu Y H, Chen P 2015 Funct. Mater. Lett. 8 1550010 Google Scholar
[4]	Wang J S, Liang D D, Wu L C, Li X P, Chen P 2018 Solid State Commun. 275 8 Google Scholar
[5]	Lee J S, Lee S, Noh T W 2015 Appl. Phys. Rev. 2 031303 Google Scholar
[6]	Lacaita A L, Wouters D J 2008 Phys. Stat. Sol. A 205 2281
[7]	Jeong D S, Thomas R, Katiyar R S, Scott J F, Kohlstedt H, A Petraru A, Hwang C S 2012 Rep. Prog. Phys. 75 076502 Google Scholar
[8]	Kumar P, Maikap S, Ginnaram S, Qiu J T, Jana D, Chakrabarti S, Samanta S, S Singh S, Roy A, Jana S 2017 J. Electrochem. Soc. 164 B127 Google Scholar
[9]	Petzold S, Zintler A, Eilhardt R, Piros E, Kaiser N, Sharath S U, Vogel T, Major Má, McKenna K P, Molina-Luna L, Alff L 2019 Adv. Electron. Mater. 5 1900484
[10]	Hsieh W K, Lam KT, Chang S J 2015 Mater. Sci. Semicon. Proc. 35 30 Google Scholar
[11]	Scott J C, Bozano L D 2007 Adv. Mater. 19 1452 Google Scholar
[12]	Lai R L, Wei M L, Wang J B, Zhou K, Qiu X Y 2021 J. Phys. D: Appl. Phys. 54 015101 Google Scholar
[13]	Waser R, Dittmann R, Staikov G, Szot K 2009 Adv. Mater. 21 2632 Google Scholar
[14]	Guo T, Sun B, Ranjan S, Jiao Y, Wei L, Zhou Y N, Wu Y A 2020 ACS Appl. Mater. Inter. 12 54243 Google Scholar
[15]	Sun B, Zhou G D, Guo T, Zhou Y N, Wu Y A 2020 Nano Energy 75 104938 Google Scholar
[16]	Tsai T M, Lin C C, Chen W C, Wu C H, Yang C C, Tan Y F, Wu P Y, Huang H C, Zhang Y C, Sun L C, Chou S Y 2020 J. Alloy. Compd. 826 154126 Google Scholar
[17]	Saylan S, Aldosari H M, Humood K, Jaoude M A, Ravaux F, Mohammad B 2020 Sci. Rep-UK 10 19541 Google Scholar
[18]	Chen R, Hu W, Zou L, Xie W, Li B, Bao D 2014 Appl. Phys. Lett. 104 242111 Google Scholar
[19]	Choi H H, Paik S H, Kim Y, Kim M, Kang Y S, Lee S S, Jho J Y, Park J H 2021 J. Ind. Eng. Chem. 94 233 Google Scholar
[20]	Strachan J P, Strukov D B, Borghetti J, Yang J J, Medeiros-Ribeiro G, Williams R S 2011 Nanotechnology 22 254015 Google Scholar
[21]	Tang Y, Zhang X, Lu Y, Chen P 2021 Functional Mater. Lett. 14 2150025 Google Scholar
[22]	Liu C F, Tang X G, Wang L Q, Tang H, Jiang Y P, Liu Q X, Li W H, Tang Z H 2019 Nanomaterials 9 1124 Google Scholar
[23]	Hu C, Wang Q, Bai S, Xu M, He D, Lyu D, Qi J 2017 Appl. Phys. Lett. 110 073501 Google Scholar
[24]	Kim H D, Kim S, Yun M J 2018 J. Alloy. Compd. 742 822 Google Scholar
[25]	Zhou G D, Duan S, Li P, et al. 2018 Adv. Electron. Mater. 1700567
[26]	Liu H C, Tang X G, Liu Q X, Jiang Y P, Li W H, Guo X B, Tang Z H 2020 Ceram. Int. 46 21196 Google Scholar
[27]	Pan X, Shuai Y, Wu C, Luo W, Sun X, Zeng H, Guo H, Yuan Y, Zhou S, Böttger R, Cheng H, Zhang J, Zhang W, Schmidt H 2019 Solid State Ionics 334 1 Google Scholar
[28]	Lü W, Li C, Zheng L, Xiao J, Lin W, Li Q, Wang X R, Huang Z, Zeng S, Han K, Zhou W, Zeng K, Chen J, Ariando, Cao W, Venkatesan T 2017 Adv. Mater. 29 1606165 Google Scholar
[29]	Wei L J, Yuan Y, Wang J, Tu H Q, Gao H Q, You B, Du J 2017 Phys. Chem. Chem. Phys. 19 11864 Google Scholar
[30]	Wang Y H, Zhao K H, Shi X L, Xie G L, Huang S Y, Zhang L W 2013 Appl. Phys. Lett. 103 031601 Google Scholar
[31]	Razi P M, Gangineni R B 2019 Thin Solid Films 685 59 Google Scholar
[32]	Wang G, Hu L, Xia Y, Li Q, Xu Q 2020 J. Magn. Magn. Mater. 493 165728 Google Scholar
[33]	Chen Y T, Chang T C, Yang P C, Huang J J, Tseng H C, Huang H C, Yang J B, Chu A K, Gan D S, Tsai M J, Sze S M 2013 IEEE Electr. Device Lett. 34 226 Google Scholar
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限制电流对Ta/BaTiO₃/Al₂O₃/ITO忆阻器的开关比和稳定性调控