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忆阻器及其阻变机理研究进展

刘东青 程海峰 朱玄 王楠楠 张朝阳

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忆阻器及其阻变机理研究进展

刘东青, 程海峰, 朱玄, 王楠楠, 张朝阳

Research progress of memristors and memristive mechanism

Liu Dong-Qing, Cheng Hai-Feng, Zhu Xuan, Wang Nan-Nan, Zhang Chao-Yang
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  • 忆阻器是除电阻、电容、电感之外的第四种电路元件,在信息存储、逻辑运算和神经网络等研究领域具有重要的应用前景. 本文综述了忆阻器以及忆阻器材料的研究进展,主要介绍了忆阻器的内涵与特征、阻变机理、材料类型以及应用前景,指出了目前忆阻器研究中需要关注的主要问题,并对以后的发展趋势进行了 展望.
    Memristors are the fourth basic circuit element in addition to the three classical elements: resistor, capacitor, and inductor, which have great application prospects in the fields of information storage, logic operations and neuromorphic networks. The recent development of memristors and memristive mechanism is reviewed, including connotations and characteristics of memristors, memristive mechanism, types of memristive mateirals, and application prospects of memristors. Finally, the key problems and development proposals are presented and a prospect on the development trend is also given.
    • 基金项目: 国家自然科学基金(批准号:21203248)和湖南省高校科技创新团队支持计划资助的课题.
    • Funds: Project supported by the National Natural Science Foundation of China (Grant No. 21203248) and the Aid Program for Science and Technology Innovative Research Team in Higher Educational Institutions of Hunan Province.
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    Chua L O 1971 IEEE Trans. Circuit Theory 18 507

    [2]

    Strukov D B, Snider G S, Stewart D R, Williams R S 2008 Nature 453 80

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    Zhu X, Tang Y H, Wu C Q, Wu J J, Yi X 2014 Chin. Phys. B 23 028501

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    Li Z W, Liu H J, Xu X 2013 Acta Phys. Sin. 62 96401(in Chinese)[李智炜, 刘海军, 徐欣 2013 物理学报 62 96401]

    [5]

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    [6]

    Biolek D, Biolek Z, Biolkova V 2011 Electron. Lett. 47 1385

    [7]

    Adhikari S P, Sah M P, Hyongsuk K, Chua L O 2013 IEEE Trans. Circuits Syst. Regul. Pap. 60 3008

    [8]

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    [9]

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    [10]

    Chua L 2011 Appl. Phys. A: Mater. 102 765

    [11]

    Prodromakis T, Toumazou C, Chua L 2012 Nat. Mater. 11 478

    [12]

    Jia L N, Huang A P, Zheng X H, Xiao Z S, Wang M 2012 Acta Phys. Sin. 61 217306(in Chinese)[贾林楠, 黄安平, 郑晓虎, 肖志松, 王玫 2012 物理学报 61 217306]

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    [15]

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    [17]

    Kamiya K, Young Y M, Park S G, Magyari-Köpe B, Nishi Y, Niwa M, Shiraishi K 2012 Appl. Phys. Lett. 100 073502

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    [23]

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    [24]

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出版历程
  • 收稿日期:  2014-04-24
  • 修回日期:  2014-05-19
  • 刊出日期:  2014-09-05

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